Mitul Dey Chowdhury, Aman R. Agrawal, and Dalziel J. Wilson
Phys. Rev. Applied 19, 024011 (2023) - Published 3 February, 2023
Cavity optomechanical accelerometers promise ultrahigh sensitivity, in situ calibration, and radiation-pressure stabilization for e.g. chip-scale gravimetry or dark-matter searches. However, platforms that meet the unique technical demands are difficult to fabricate. The authors demonstrate a simple, scalable setup with an optical cavity based on a pair of vertically integrated SiN membranes of different stiffnesses. Radiation-pressure cooling of membrane motion enables resolution of chip acceleration to better than , over a bandwidth of several kilohertz. A cryogenic array of these devices could be used to search for weak inertial forces due to dark matter.
Thomas Paul Weiss, Omar Ramírez, Stefan Paetel, Wolfram Witte, Jiro Nishinaga, Thomas Feurer, and Susanne Siebentritt
Phys. Rev. Applied 19, 024052 (2023) - Published 17 February, 2023
Solar cells are made from semiconductors, which inevitably include defects. The defects in Cu(In,Ga)Se (CIGS) are known to be metastable: With excitation they change character, which can have a profound impact on device function. The authors show that these metastable defects reduce the efficiency of the solar cell due to an increased diode factor. It is possible to measure this quantity directly from the bare absorber (without needing to build the entire solar cell), yielding a lower limit for the whole device. Experiments and simulations indicate that metastable defects must be reduced to increase efficiency, and not just in CIGS-based solar cells.
Jan Aeschlimann, Fabian Ducry, Christoph Weilenmann, Juerg Leuthold, Alexandros Emboras, and Mathieu Luisier
Phys. Rev. Applied 19, 024058 (2023) - Published 22 February, 2023
Continuum modeling is a popular, computationally efficient technique that can shed light on the resistance-switching properties of conductive bridging random-access memory (CBRAM) cells. Traditional models typically rely on many fitting parameters, but this approach uses material parameters extracted either from either ab initio or machine-learned empirical calculations. As proof of concept, the authors apply the computational framework to an SiO-based CBRAM cell, and reveal the relevance of Joule heating in nanoscale devices. With the proposed multiscale methodology it is possible to explore the potential of not-yet-fabricated memory cells, and to optimize their design reliably.
Yasuyuki Narita, Peng Wang, Keita Ikeda, Kazuki Oba, Yoshiyuki Miyamoto, Takashi Taniguchi, Shinobu Onoda, Mutsuko Hatano, and Takayuki Iwasaki
Phys. Rev. Applied 19, 024061 (2023) - Published 23 February, 2023
Tin-vacancy (Sn-) centers in diamond, which possess good optical and spin properties, are a promising system for constructing quantum network nodes. Tin atoms are heavy, though, and generating photons with identical wavelength and linewidth from multiple Sn- emitters is challenging, due to the strain in the diamond host material. This study shows that multiple Sn- centers, formed deep within bulk diamond by ion implantation and high-temperature annealing, emit nearly identical photons. This leads to two-photon interference from distant centers, an important step toward building quantum network nodes.
Ludwik Kranz, Stephen Roche, Samuel K. Gorman, Joris. G. Keizer, and Michelle Y. Simmons
Phys. Rev. Applied 19, 024068 (2023) - Published 24 February, 2023
Epitaxial atom-based spin qubits in silicon exhibit excellent properties, and benefit from the outstanding scalability of that material platform. As silicon spin-based qubits now start to meet the 99% fault-tolerance threshold, the authors show how the nuclear spins inherent to the local magnetic environment can be engineered as atomic magnets to boost the fidelities of two-qubit logic gates. Modeling indicates that two-qubit CNOT gate fidelities as high as 99.98% are realistic, through silicon purification and careful engineering. This work provides a roadmap for atom qubits in silicon, showing how to optimize two-qubit gates at both the design and measurement stages.
Guillermo Camacho, Alejandro Rodriguez-Barroso, Oscar Martinez-Cano, Jose R. Morillas, Pietro Tierno, and Juan de Vicente
Phys. Rev. Applied 19, L021001 (2023) - Published 21 February, 2023
The transport of matter via a ratchet effect represents a convenient way to extract useful work from a thermodynamic system, and can have direct applications in several microscale fluid-based technologies. Most realizations so far have been centered on using Newtonian fluids. This study shows how to achieve directed transport of magnetic microparticles in a non-Newtonian shear-thinning fluid under a square-wave magnetic force. This technique could be used in active microrheology, to infer the nonlinear properties of viscoelastic media.
Yunwei Sheng, Mathieu Mirjolet, Mario Villa, Jaume Gàzquez, José Santiso, Andreas Klein, Jordi Fraxedas, and Josep Fontcuberta
Phys. Rev. Applied 19, 024001 (2023) - Published 1 February, 2023
J.A. Potter, J.C. Fenton, and P.A. Warburton
Phys. Rev. Applied 19, 024002 (2023) - Published 1 February, 2023
Yanmei Zang, Qian Wu, Shuhua Wang, Baibiao Huang, Ying Dai, and Yandong Ma
Phys. Rev. Applied 19, 024003 (2023) - Published 1 February, 2023
Vishnu V. Krishnan, Kabir Ramola, and Smarajit Karmakar
Phys. Rev. Applied 19, 024004 (2023) - Published 1 February, 2023
Menno Demmenie, Lars Reus, Paul Kolpakov, Sander Woutersen, Daniel Bonn, and Noushine Shahidzadeh
Phys. Rev. Applied 19, 024005 (2023) - Published 2 February, 2023
Noah Gorgichuk, Tobias Junginger, and Rogério de Sousa
Phys. Rev. Applied 19, 024006 (2023) - Published 2 February, 2023
Mohammad Alipourzadeh, Sakineh Vosoughi-nia, Yaser Hajati, and Imam Makhfudz
Phys. Rev. Applied 19, 024007 (2023) - Published 2 February, 2023
Qingqing Zhang, Lishuai Yu, Zhengpin Bian, Dong Yuan, Hailing Sun, Biao Tang, Xubing Lu, Feilong Liu, and Guofu Zhou
Phys. Rev. Applied 19, 024008 (2023) - Published 2 February, 2023
Zeren Zhang, Fubao Yang, and Jiping Huang
Phys. Rev. Applied 19, 024009 (2023) - Published 3 February, 2023
Xiaoxiang Zhu, Yuechao Wang, and Wenyu Ji
Phys. Rev. Applied 19, 024010 (2023) - Published 3 February, 2023
Mitul Dey Chowdhury, Aman R. Agrawal, and Dalziel J. Wilson
Phys. Rev. Applied 19, 024011 (2023) - Published 3 February, 2023
Cavity optomechanical accelerometers promise ultrahigh sensitivity, in situ calibration, and radiation-pressure stabilization for e.g. chip-scale gravimetry or dark-matter searches. However, platforms that meet the unique technical demands are difficult to fabricate. The authors demonstrate a simple, scalable setup with an optical cavity based on a pair of vertically integrated SiN membranes of different stiffnesses. Radiation-pressure cooling of membrane motion enables resolution of chip acceleration to better than , over a bandwidth of several kilohertz. A cryogenic array of these devices could be used to search for weak inertial forces due to dark matter.
Peter Yun (云恩学), Rodolphe Boudot, and Emeric de Clercq
Phys. Rev. Applied 19, 024012 (2023) - Published 3 February, 2023
Hao Deng, Zhijun Song, Ran Gao, Tian Xia, Feng Bao, Xun Jiang, Hsiang-Sheng Ku, Zhisheng Li, Xizheng Ma, Jin Qin, Hantao Sun, Chengchun Tang, Tenghui Wang, Feng Wu, Wenlong Yu, Gengyan Zhang, Xiaohang Zhang, Jingwei Zhou, Xing Zhu, Yaoyun Shi, Hui-Hai Zhao, and Chunqing Deng
Phys. Rev. Applied 19, 024013 (2023) - Published 6 February, 2023
Arno Bargerbos, Lukas Johannes Splitthoff, Marta Pita-Vidal, Jaap J. Wesdorp, Yu Liu, Peter Krogstrup, Leo P. Kouwenhoven, Christian Kraglund Andersen, and Lukas Grünhaupt
Phys. Rev. Applied 19, 024014 (2023) - Published 6 February, 2023
Jozef Bucko, Frank Schäfer, František Herman, Rebekka Garreis, Chuyao Tong, Annika Kurzmann, Thomas Ihn, and Eliska Greplova
Phys. Rev. Applied 19, 024015 (2023) - Published 6 February, 2023
Arshid Nisar, Tanmoy Pramanik, and Brajesh Kumar Kaushik
Phys. Rev. Applied 19, 024016 (2023) - Published 6 February, 2023
Gabriel Amselem, Christophe Clanet, and Michael Benzaquen
Phys. Rev. Applied 19, 024017 (2023) - Published 7 February, 2023
Xin Li, Jian Feng Chen, Wei Yuan, Zhan Hao Wu, Wen Xuan Tang, Lei Wang, Qiang Cheng, and Tie Jun Cui
Phys. Rev. Applied 19, 024018 (2023) - Published 7 February, 2023
Naeem Iqbal, Sen Zhang, Shuai Wang, Zezheng Fang, Yaoyuan Hu, Yongdi Dang, Minjie Zhang, Yi Jin, Jianbin Xu, Binfeng Ju, and Yungui Ma
Phys. Rev. Applied 19, 024019 (2023) - Published 7 February, 2023
Tatsuya Yamamoto, Tomohiro Ichinose, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, and Shinji Yuasa
Phys. Rev. Applied 19, 024020 (2023) - Published 7 February, 2023
Zhiguo Wang, Xiang Peng, Zhiqiang Xiong, Jintao Zheng, Hui Luo, and Hong Guo
Phys. Rev. Applied 19, 024021 (2023) - Published 8 February, 2023
Jin Xiang, Qingyi Zhou, Soongyu Yi, and Yurui Qu
Phys. Rev. Applied 19, 024022 (2023) - Published 8 February, 2023
Shi-Qiao Wu, Zhi-Kang Lin, Zhan Xiong, Bin Jiang, and Jian-Hua Jiang
Phys. Rev. Applied 19, 024023 (2023) - Published 8 February, 2023
Shibo Fang, Chen Yang, Qiuhui Li, Baochun Wu, Linqiang Xu, Shiqi Liu, Jie Yang, Jiachen Ma, Jichao Dong, Ying Li, Jinbo Yang, and Jing Lu
Phys. Rev. Applied 19, 024024 (2023) - Published 8 February, 2023
Chao Li, Boqi Qiu, Yuri Yoshioka, Kazuhiko Hirakawa, and Ya Zhang
Phys. Rev. Applied 19, 024025 (2023) - Published 9 February, 2023
Lijuan Fan and Jun Mei
Phys. Rev. Applied 19, 024026 (2023) - Published 9 February, 2023
Zeqiao Zhou, Yuxuan Du, Xinmei Tian, and Dacheng Tao
Phys. Rev. Applied 19, 024027 (2023) - Published 9 February, 2023
Zhengjie Huang, Liang Peng, Zhongbo Zhu, Xiaojun Hu, Chun Wang, Jingxin Tang, and Dexin Ye
Phys. Rev. Applied 19, 024028 (2023) - Published 9 February, 2023
Mangyuan Ma, Wen Siang Lew, and Fusheng Ma
Phys. Rev. Applied 19, 024029 (2023) - Published 10 February, 2023
Hongyue Xu, Haoran Chen, Fanlong Zeng, Jia Xu, Xi Shen, and Yizheng Wu
Phys. Rev. Applied 19, 024030 (2023) - Published 10 February, 2023
Filipa R. Prudêncio and Mário G. Silveirinha
Phys. Rev. Applied 19, 024031 (2023) - Published 10 February, 2023
Guillaume Noetinger, Samuel Métais, Geoffroy Lerosey, Mathias Fink, Sébastien M. Popoff, and Fabrice Lemoult
Phys. Rev. Applied 19, 024032 (2023) - Published 10 February, 2023
R.K. Han, L. Liu, H.L. Sun, H.R. Qin, X.P. Zhao, D. Pan, D.H. Wei, and J.H. Zhao
Phys. Rev. Applied 19, 024033 (2023) - Published 13 February, 2023
Kaifeng Dong, Zhe Guo, YiYi Jiao, Ruofan Li, Chao Sun, Ying Tao, Shuai Zhang, Jeongmin Hong, and Long You
Phys. Rev. Applied 19, 024034 (2023) - Published 13 February, 2023
L. Rehm, C.C.M. Capriata, S. Misra, J.D. Smith, M. Pinarbasi, B.G. Malm, and A.D. Kent
Phys. Rev. Applied 19, 024035 (2023) - Published 13 February, 2023
Sang Vin Jang, Sung Won Lee, and Joo Hwan Oh
Phys. Rev. Applied 19, 024036 (2023) - Published 13 February, 2023
Baochun Wu, Shibo Fang, Jie Yang, Shiqi Liu, Yuxuan Peng, Qiuhui Li, Zhongchong Lin, Junjie Shi, Wenyun Yang, Zhaochu Luo, Changsheng Wang, Jinbo Yang, Jing Lu, and Honglin Du
Phys. Rev. Applied 19, 024037 (2023) - Published 14 February, 2023
M. Hanke, N. Ashurbekov, E. Zatterin, M.E. Msall, J. Hellemann, P.V. Santos, T.U. Schulli, and S. Ludwig
Phys. Rev. Applied 19, 024038 (2023) - Published 14 February, 2023
V. M. Muravev, A. V. Shchepetilnikov, K. R. Dzhikirba, I. V. Kukushkin, R. Schott, E. Cheah, W. Wegscheider, and A. Shuvaev
Phys. Rev. Applied 19, 024039 (2023) - Published 14 February, 2023
Shu Zou, Zhengwentao Cheng, Xian Zhang, Guanfang Wang, Hongfan Liu, Zebang Yang, Yuan Zhong, Jianping Liu, Liangcheng Tu, Shanqing Yang, and Zhu Li
Phys. Rev. Applied 19, 024040 (2023) - Published 14 February, 2023
Lishuai Yu, Qingqing Zhang, Zhengpin Bian, Guangzheng Zuo, Harm van Eersel, Peter A. Bobbert, Reinder Coehoorn, Feilong Liu, and Guofu Zhou
Phys. Rev. Applied 19, 024041 (2023) - Published 15 February, 2023
Pavel Gallina, Andrea Konečná, Jiří Liška, Juan Carlos Idrobo, and Tomáš Šikola
Phys. Rev. Applied 19, 024042 (2023) - Published 15 February, 2023
David Rodríguez Pérez, Paul Varosy, Ziqian Li, Tanay Roy, Eliot Kapit, and David Schuster
Phys. Rev. Applied 19, 024043 (2023) - Published 15 February, 2023
Yuanyang Du, Jiebin Peng, Zhong Shi, and Jie Ren
Phys. Rev. Applied 19, 024044 (2023) - Published 15 February, 2023
Bo-Long Wang, Xin-Lei Hei, Xing-Liang Dong, Xiao-Yu Yao, Jia-Qiang Chen, Yi-Fan Qiao, Fu-Li Li, and Peng-Bo Li
Phys. Rev. Applied 19, 024045 (2023) - Published 16 February, 2023
Jilei Chen, Kei Yamamoto, Jianyu Zhang, Ji Ma, Hanchen Wang, Yuanwei Sun, Mingfeng Chen, Jing Ma, Song Liu, Peng Gao, Dapeng Yu, Jean-Philippe Ansermet, Ce-Wen Nan, Sadamichi Maekawa, and Haiming Yu
Phys. Rev. Applied 19, 024046 (2023) - Published 16 February, 2023
Manpreet Singh Jattana, Fengping Jin, Hans De Raedt, and Kristel Michielsen
Phys. Rev. Applied 19, 024047 (2023) - Published 16 February, 2023
Peng Cheng, Deyuan Yao, Jinwei Yan, Tingting Ye, Huanhuan Liu, Hong Zeng, Xiaomei Pan, Genqiang Zhang, and Junfeng Ding
Phys. Rev. Applied 19, 024048 (2023) - Published 16 February, 2023
Wei Lyu, Weiwei Tang, Wei Yan, and Min Qiu
Phys. Rev. Applied 19, 024049 (2023) - Published 17 February, 2023
Jianjun Lin, Yuang Chen, Hongru Wang, Bobo Tian, Ye Chen, Zhiyong Zhou, Fangyu Yue, Rong Huang, Chun-Gang Duan, Junhao Chu, and Lin Sun
Phys. Rev. Applied 19, 024050 (2023) - Published 17 February, 2023
Yan Liang, Pu Shen, Li-Na Ji, and Zheng-Yuan Xue
Phys. Rev. Applied 19, 024051 (2023) - Published 17 February, 2023
Thomas Paul Weiss, Omar Ramírez, Stefan Paetel, Wolfram Witte, Jiro Nishinaga, Thomas Feurer, and Susanne Siebentritt
Phys. Rev. Applied 19, 024052 (2023) - Published 17 February, 2023
Solar cells are made from semiconductors, which inevitably include defects. The defects in Cu(In,Ga)Se (CIGS) are known to be metastable: With excitation they change character, which can have a profound impact on device function. The authors show that these metastable defects reduce the efficiency of the solar cell due to an increased diode factor. It is possible to measure this quantity directly from the bare absorber (without needing to build the entire solar cell), yielding a lower limit for the whole device. Experiments and simulations indicate that metastable defects must be reduced to increase efficiency, and not just in CIGS-based solar cells.
Yun Zhou, Naiqing Zhang, Dia’aaldin J. Bisharat, Robert J. Davis, Zichen Zhang, James Friend, Prabhakar R. Bandaru, and Daniel F. Sievenpiper
Phys. Rev. Applied 19, 024053 (2023) - Published 21 February, 2023
Takuto Ichikawa, Aizitiaili Abulikemu, and Muneaki Hase
Phys. Rev. Applied 19, 024054 (2023) - Published 21 February, 2023
Kohei Etou, Satoshi Hiura, Soyoung Park, Junichi Takayama, Agus Subagyo, Kazuhisa Sueoka, and Akihiro Murayama
Phys. Rev. Applied 19, 024055 (2023) - Published 21 February, 2023
Xiao-Fei Liu, Nikolai Spitzer, Haruki Kiyama, Arne Ludwig, Andreas D. Wieck, and Akira Oiwa
Phys. Rev. Applied 19, 024056 (2023) - Published 22 February, 2023
Xuexin Xu and M. Ansari
Phys. Rev. Applied 19, 024057 (2023) - Published 22 February, 2023
Jan Aeschlimann, Fabian Ducry, Christoph Weilenmann, Juerg Leuthold, Alexandros Emboras, and Mathieu Luisier
Phys. Rev. Applied 19, 024058 (2023) - Published 22 February, 2023
Continuum modeling is a popular, computationally efficient technique that can shed light on the resistance-switching properties of conductive bridging random-access memory (CBRAM) cells. Traditional models typically rely on many fitting parameters, but this approach uses material parameters extracted either from either ab initio or machine-learned empirical calculations. As proof of concept, the authors apply the computational framework to an SiO-based CBRAM cell, and reveal the relevance of Joule heating in nanoscale devices. With the proposed multiscale methodology it is possible to explore the potential of not-yet-fabricated memory cells, and to optimize their design reliably.
Andrzej Kolek
Phys. Rev. Applied 19, 024059 (2023) - Published 22 February, 2023
Khang Hoang
Phys. Rev. Applied 19, 024060 (2023) - Published 23 February, 2023
Yasuyuki Narita, Peng Wang, Keita Ikeda, Kazuki Oba, Yoshiyuki Miyamoto, Takashi Taniguchi, Shinobu Onoda, Mutsuko Hatano, and Takayuki Iwasaki
Phys. Rev. Applied 19, 024061 (2023) - Published 23 February, 2023
Tin-vacancy (Sn-) centers in diamond, which possess good optical and spin properties, are a promising system for constructing quantum network nodes. Tin atoms are heavy, though, and generating photons with identical wavelength and linewidth from multiple Sn- emitters is challenging, due to the strain in the diamond host material. This study shows that multiple Sn- centers, formed deep within bulk diamond by ion implantation and high-temperature annealing, emit nearly identical photons. This leads to two-photon interference from distant centers, an important step toward building quantum network nodes.
P.I. Gerevenkov, Ia.A. Filatov, A.M. Kalashnikova, and N.E. Khokhlov
Phys. Rev. Applied 19, 024062 (2023) - Published 23 February, 2023
Debasis Das, Yunuo Cen, Jianze Wang, and Xuanyao Fong
Phys. Rev. Applied 19, 024063 (2023) - Published 23 February, 2023
R. Kumar, C.E. Fillion, B. Lovery, I. Benguettat-El Mokhtari, I. Joumard, S. Auffret, L. Ranno, Y. Roussigné, S.M. Chérif, A. Stashkevich, M. Belmeguenai, C. Baraduc, and H. Béa
Phys. Rev. Applied 19, 024064 (2023) - Published 24 February, 2023
D.P. Pattnaik, Y. Ushakov, Z. Zhou, P. Borisov, M.D. Cropper, U.W. Wijayantha, A.G. Balanov, and S.E. Savel′ev
Phys. Rev. Applied 19, 024065 (2023) - Published 24 February, 2023
T. Chang, T. Cohen, I. Holzman, G. Catelani, and M. Stern
Phys. Rev. Applied 19, 024066 (2023) - Published 24 February, 2023
Giovanni Franco-Rivera, Josiah Cochran, Seiji Miyashita, Sylvain Bertaina, and Irinel Chiorescu
Phys. Rev. Applied 19, 024067 (2023) - Published 24 February, 2023
Ludwik Kranz, Stephen Roche, Samuel K. Gorman, Joris. G. Keizer, and Michelle Y. Simmons
Phys. Rev. Applied 19, 024068 (2023) - Published 24 February, 2023
Epitaxial atom-based spin qubits in silicon exhibit excellent properties, and benefit from the outstanding scalability of that material platform. As silicon spin-based qubits now start to meet the 99% fault-tolerance threshold, the authors show how the nuclear spins inherent to the local magnetic environment can be engineered as atomic magnets to boost the fidelities of two-qubit logic gates. Modeling indicates that two-qubit CNOT gate fidelities as high as 99.98% are realistic, through silicon purification and careful engineering. This work provides a roadmap for atom qubits in silicon, showing how to optimize two-qubit gates at both the design and measurement stages.
Guanyang He, Yiou Zhang, and Gang Xiao
Phys. Rev. Applied 19, 024069 (2023) - Published 27 February, 2023
Ko Ito, Takeshi Kondo, Kyoko Mannami, Kazuya Niizeki, Daisuke Yoshida, Kohei Minaguchi, Mingyang Zheng, Xiuping Xie, Feng-Lei Hong, and Tomoyuki Horikiri
Phys. Rev. Applied 19, 024070 (2023) - Published 27 February, 2023
Rahman Sharaf, Sara Darbari, and Abdelkrim Khelif
Phys. Rev. Applied 19, 024071 (2023) - Published 27 February, 2023
Jiajun Feng, Hui Tan, Jun-Feng Liu, and Jun Wang
Phys. Rev. Applied 19, 024072 (2023) - Published 27 February, 2023
B. Niedzielski, C.L. Jia, and J. Berakdar
Phys. Rev. Applied 19, 024073 (2023) - Published 28 February, 2023
Adrian Holzäpfel, Antonio Ortu, and Mikael Afzelius
Phys. Rev. Applied 19, 024074 (2023) - Published 28 February, 2023
Ruigang Li, Jun-Feng Liu, and Jun Wang
Phys. Rev. Applied 19, 024075 (2023) - Published 28 February, 2023
Peng Li, Sanyum Channa, Xiang Li, Laith Alahmed, Chunli Tang, Di Yi, Lauren Riddiford, Jacob Wisser, Purnima P. Balakrishnan, Xin Yu Zheng, Di Lu, Arturas Vailionis, Shan X. Wang, and Yuri Suzuki
Phys. Rev. Applied 19, 024076 (2023) - Published 28 February, 2023