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Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions

Kohei Etou, Satoshi Hiura ^*, Soyoung Park, Junichi Takayama , Agus Subagyo, Kazuhisa Sueoka, and Akihiro Murayama

Faculty of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan

^*hiura@ist.hokudai.ac.jp

Phys. Rev. Applied 19, 024055 – Published 21 February, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.024055

Abstract

Spin-polarized light-emitting diodes (spin LEDs) are essential for the optical transfer of carrier-spin information in spin-based electronic circuits. Efficient operation under high-bias conditions is required for high-speed transfer of spin information and strong light emission. However, achieving high-electroluminescence (EL) circular polarization is hampered by electric-field-induced spin relaxation during drift transport in undoped $Ga As$ barriers. Herein, we demonstrate the efficient room-temperature operation of a spin LED using ( $In, Ga) As$ quantum dots (QDs) tunnel coupled with a 5-nm-thick $Ga (N, As)$ quantum well (QW). A high-EL circular polarization of approximately 7% is achieved, even under high-bias conditions, in comparison with the lower value of approximately 3% for the conventional QD spin LED without $Ga (N, As)$ . This is realized by an increase of spin polarization after injection into the QDs by utilizing remote spin filtering of QD electrons via an adjacent tunnel-coupled $Ga (N, As)$ QW. These results demonstrate that the tunnel-coupled structure of ( $In, Ga) As$ QDs and $Ga (N, As)$ QW is a promising active layer of spin LEDs for achieving both strong EL emission and high-EL circular polarization at room temperature.

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Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions

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Physics Subject Headings (PhySH)

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Supplemental Material

References (34)

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