Interesting non-Abelian states, e.g., the Moore-Read Pfaffian and the anti-Pfaffian, offer candidate descriptions of the fractional quantum Hall state. But, the significant controversy surrounding the nature of the state has been hampered by the fact that the competition between these and other states is affected by small parameter changes. To study the phase diagram of the state, we numerically diagonalize a comprehensive effective Hamiltonian describing the fractional quantum Hall effect of electrons under realistic conditions in GaAs semiconductors. The effective Hamiltonian takes Landau-level mixing into account to lowest order perturbatively in , the ratio of the Coulomb energy scale to the cyclotron gap. We also incorporate the nonzero width of the quantum-well and subband mixing. We find the ground state in both the torus and spherical geometries as a function of and . To sort out the nontrivial competition between candidate ground states, we analyze the following four criteria: its overlap with trial wave functions, the magnitude of energy gaps, the sign of the expectation value of an order parameter for particle-hole symmetry breaking, and the entanglement spectrum. We conclude that the ground state is in the universality class of the Moore-Read Pfaffian state, rather than the anti-Pfaffian, for , where is a -dependent critical value . We observe that both Landau-level mixing and nonzero width suppress the excitation gap, but Landau-level mixing has a larger effect in this regard. Our findings have important implications for the identification of non-Abelian fractional quantum Hall states.