Recent Articles

Orbital filtering in edge-state transport of PbSe nanoribbons

M. A. Toloza Sandoval, R. L. H. Freire, A. L. Araújo, Carlos Mera Acosta, F. Crasto de Lima, and A. Fazzio

Phys. Rev. Materials 9, 094201 (2025) - Published 2 September, 2025

Dirac-cone-type topological surface states in LaNa2Fe4As4: A novel intergrowth structure of iron-based superconductors

Guangwei Wang, Pengyu Zheng, Bing Chen, Yandong Peng, Peng Wang, Da Chen, and Zhiping Yin

Phys. Rev. Materials 9, 094202 (2025) - Published 2 September, 2025

Synthesis of cobalt grown from Co-S eutectic in high magnetic fields

Steven Flynn, Caeli L. Benyacko, Matúš Mihalik, Jared Lee, Fuyan Ma, Michael E. Bates, Shubham Sinha, Khalil A. Abboud, Marian Mihalik, Mark W. Meisel, and James J. Hamlin

Phys. Rev. Materials 9, 094401 (2025) - Published 2 September, 2025

Crystalline water intercalation into the Kitaev honeycomb cobaltate Na2Co2TeO6

Masaaki Ito, Yuya Haraguchi, Teruki Motohashi, Miwa Saito, Satoshi Ogawa, Takashi Ikuta, and Hiroko Aruga Katori

Phys. Rev. Materials 9, 094402 (2025) - Published 2 September, 2025

Magnetostriction as the origin of the magnetodielectric effect in La2CoMnO6

M. Boldrin, A. Bagri, D. Barlettani, E. Teather, L. Squillante, M. de Souza, R. B. Pontes, A. G. Silva, T. J. A. Mori, R. Perry, R. Lora-Serrano, E. Granado, E. M. Bittar, L. S. I. Veiga, and L. Bufaiçal

Phys. Rev. Materials 9, 094403 (2025) - Published 2 September, 2025

Analysis of real-space transport channels for electrons and holes in halide perovskites

Frederik Vonhoff, Maximilian J. Schilcher, David R. Reichman, and David A. Egger

Phys. Rev. Materials 9, 094601 (2025) - Published 2 September, 2025

Carrier transport in halide perovskite semiconductors is difficult to predict computationally because these systems show unusual vibrational and electron-phonon coupling mechanism. The authors used a dynamic disorder model that was parameterized from first-principles to analyze temporal orbital occupations and investigate how material-specific on-site energy levels and spin-orbit coupling strengths influence carrier mobilities. They find that both on-site energy gaps and halide spin-orbit coupling significantly affect carrier dynamics driven by three transport channels, which helps explain the differing behaviors of electron and hole mobility across different halide perovskites.

Lattice quantum geometry controlling 118 K multigap superconductivity in heavily overdoped CuBa2Ca3Cu4O10+δ

Gaetano Campi, Massimiliano Catricalà, Giuseppe Chita, Luisa Barba, Luchuan Shi, Jianfa Zhao, Changing Jin, and Antonio Bianconi

Phys. Rev. Materials 9, 094801 (2025) - Published 2 September, 2025

Electronic structure of the YCrB4 crystal surface, studied by micro-focused photoemission spectroscopy

Xiaoni Zhang, Yuki Tsujikawa, Masashige Miyamoto, Kazuki Yamaguchi, Masahito Niibe, Daisuke Nishio-Hamane, Mei Yuan, Kenichi Ozawa, Masafumi Horio, Kunio Yubuta, Takahiro Kondo, and Iwao Matsuda

Phys. Rev. Materials 9, 095001 (2025) - Published 2 September, 2025

Machine learning-driven analytical models for threshold displacement energy prediction in materials

Rosty B. Martinez Duque, Arman Duha, and Mario F. Borunda

Phys. Rev. Materials 9, 085002 (2025) - Published 29 August, 2025

Analysis of Josephson junction barrier variation: A combined electron microscopy, breakdown, and Monte Carlo approach

Oscar W. Kennedy, Kevin G. Crawford, Kowsar Shahbazi, and Connor D. Shelly

Phys. Rev. Materials 9, 084803 (2025) - Published 28 August, 2025

Structure and energetics of ceria-zirconia alloys: Insights from first principles in the ceria-poor region

Gaël Huynh, Tristan Albaret, and David Rodney

Phys. Rev. Materials 9, 083608 (2025) - Published 27 August, 2025

Breaking the curse of dimensionality: Solving configurational integrals for crystalline solids by tensor networks

Duc P. Truong, Benjamin Nebgen, Derek DeSantis, Dimiter N. Petsev, Kim Ø. Rasmussen, and Boian S. Alexandrov

Phys. Rev. Materials 9, 083802 (2025) - Published 27 August, 2025

Correct space group determination of 2D materials

Rashmi Ranjan Routaray, Eric Bousquet, Matteo Giantomassi, and Xavier Gonze

Phys. Rev. Materials 9, 084003 (2025) - Published 27 August, 2025

Persistent photoconductivty in n-type Sb2Se3

F. Herklotz, E. V. Lavrov, T. D. C. Hobson, T. Shalvey, J. D. Major, and K. Durose

Phys. Rev. Materials 9, 084604 (2025) - Published 27 August, 2025

Inducing spin splitting and anomalous valley Hall effect in A-type AFM Fe2C(OH)2 through electric field and Janus engineering

Ankita Phutela and Saswata Bhattacharya

Phys. Rev. Materials 9, L081001 (2025) - Published 27 August, 2025

Domain wall pinning and domain wall resistivity in notched La0.7Sr0.3MnO3 nanostructures

Yao Junxiang, Maurits E. K. Geenen, Harm A. Bakker, Leon Abelmann, and Jan Aarts

Phys. Rev. Materials 9, 084414 (2025) - Published 26 August, 2025

Magnetic field-induced tetragonal domain alignment and structural distortion in the spin-orbit-coupled insulator Ba2MgReO6

Toshihiko Muroi, Daigorou Hirai, Hajime Sagayama, Taka-hisa Arima, and Zenji Hiroi

Phys. Rev. Materials 9, 084415 (2025) - Published 26 August, 2025

Optimizing thermoelectric performance of graphene antidot lattices via quantum transport and machine-learning molecular dynamics simulations

Yang Xiao, Yuqi Liu, Zihan Tan, Bohan Zhang, Ke Xu, Zheyong Fan, Shunda Chen, Shiyun Xiong, and Haikuan Dong

Phys. Rev. Materials 9, 084603 (2025) - Published 26 August, 2025

Faceting transition in aluminum as a grain boundary phase transition

Yoonji Choi (최윤지) and Tobias Brink

Phys. Rev. Materials 9, 083607 (2025) - Published 25 August, 2025

Certain faceted grain boundaries have been observed to become flat above a critical temperature. In this work, the authors use atomistic computer simulations to show that the flat and faceted boundaries have different atomic structures. This means that the two states are in fact two distinct defect phases with different thermodynamic stability ranges and there is a first order transition between them. The change of the mesoscopic topography of the grain boundary with temperature is thus a result of the microscopic structural transition.

Mechanically and electrically tunable Rashba-Edelstein effect in ferroelectric semiconductors, CsGeX3 (X=I, Br, Cl)

Abduljelili Popoola, Ravi Kashikar, Ali Azmy, Ioannis Spanopoulos, Homayoun Jafari, Jagoda Sławińska, Sarath Witanachchi, Sergey Lisenkov, and Inna Ponomareva

Phys. Rev. Materials 9, 084412 (2025) - Published 25 August, 2025

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