Neural network atomic potential to investigate the dislocation dynamics in bcc iron
Hideki Mori and Taisuke Ozaki
Phys. Rev. Materials 4, 040601(R) (2020) - Published 24 April, 2020
Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, and Manuel Bibes
Phys. Rev. Materials 4, 041002(R) (2020) - Published 16 April, 2020
Ferroelectric materials possess electric dipoles adding up to a macroscopic polarization that is switchable by an electric field. Most ferroelectrics are insulators but some are wide bandgap semiconductors that by doping can be turned into metallic conductors. If doping is restricted to a thin slab near the material surface, the conducting region may harbor a two-dimensional electron gas (2DEG). The 2DEG can then be affected by ferroelectric polarization switching, and may even retain ferroelectric properties coexisting with the conducting behavior. The paper by Bréhin reports indications of this behavior in a 2DEG at the surface of ferroelectric Ca-SrTiO.
Jinghui Miao, Baoming Wang, and Carl V. Thompson
Phys. Rev. Materials 4, 043608 (2020) - Published 30 April, 2020
First-order amorphous-to-amorphous phase transitions (polyamorphic transitions) are rarely observed and have been associated with pressure or temperature changes. The authors report first-order polyamorphic transitions caused by changes in composition. Observations were made during electrochemical insertion of lithium into amorphous silicon films under potentiostatic conditions. Kinetic analyses using the Johnson-Mehl-Avrami-Kolmogorov model applied to measurements of current as a function of time at different overpotentials indicate nucleation and growth of Li-rich phases throughout the volume of the films. This conclusion is supported by electron microscope images of twophase amorphous films with image contrast provided through preferential high energy electron sputtering of Li from Li-rich phases.
Y. Satake, J. Shiogai, G. P. Mazur, S. Kimura, S. Awaji, K. Fujiwara, T. Nojima, K. Nomura, S. Souma, T. Sato, T. Dietl, and A. Tsukazaki
Phys. Rev. Materials 4, 044202 (2020) - Published 21 April, 2020
Although BiSe is one of the most studied topological insulators, it has been difficult so far to observe the quantized anomalous Hall (QAH) effect due to the difficulty in the formation of a gapless chiral state in the gap formed by hybridization of surface states. The authors have developed the molecular beam epitaxial growth of paramagnetic Fe-doped BiSe-based heterostructures with well-controlled thickness and Bi/Sb composition ratio. The application of a magnetic field resulted in the emergence of QAH conductance driven by a giant exchange splitting of topological states. The demonstration of finely tuned architectures of topological materials will accelerate in-depth understanding of the topological phase transitions.
Tribhuwan Pandey, Lucas Lindsay, Brian C. Sales, and David S. Parker
Phys. Rev. Materials 4, 045403 (2020) - Published 13 April, 2020
This theoretical and experimental work finds the simple CsCl-structure TlBr to exhibit both high and extremely low thermal conductivity in different temperature ranges. First-principles calculations demonstrate that low room-temperature lattice thermal conductivity arises from avoided-crossing-related anharmonicity (only effective at appreciable temperatures) and multiple related lattice near instabilities. Evidence for ‘localized oscillator’ thermal transport, originally hypothesized by Einstein, is also presented.
Sampo Inkinen, Lide Yao, and Sebastiaan van Dijken
Phys. Rev. Materials 4, 046002 (2020) - Published 28 April, 2020
Active control over the concentration or distribution of oxygen vacancies in transition metal oxides enables manipulation of their structural, magnetic, electronic transport, and optical properties. Topotactic oxidation or reduction reactions involving annealing under different ambient conditions are often used to manipulate the oxygen concentration. In this paper, using in situ scanning transmission electron microscopy, the authors demonstrate a reversible structural phase transition in perovskite LaSrCoO films during heating/cooling cycles while the environment and oxygen vacancy concentration are kept constant. Switching between two oxygen-deficient structures is shown to arise from a local reordering of the oxygen vacancies by thermal strain imposed by the substrate. This approach presents new opportunities for switchable ionic devices.
Hideki Mori and Taisuke Ozaki
Phys. Rev. Materials 4, 040601(R) (2020) - Published 24 April, 2020
Zhi Wang, Meng Huang, Jianzhou Zhao, Cong Chen, Haoliang Huang, Xiangqi Wang, Ping Liu, Jianlin Wang, Junxiang Xiang, Chao Feng, Zengming Zhang, Xudong Cui, Yalin Lu, Shengyuan A. Yang, and Bin Xiang
Phys. Rev. Materials 4, 041001(R) (2020) - Published 13 April, 2020
Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, and Manuel Bibes
Phys. Rev. Materials 4, 041002(R) (2020) - Published 16 April, 2020
Ferroelectric materials possess electric dipoles adding up to a macroscopic polarization that is switchable by an electric field. Most ferroelectrics are insulators but some are wide bandgap semiconductors that by doping can be turned into metallic conductors. If doping is restricted to a thin slab near the material surface, the conducting region may harbor a two-dimensional electron gas (2DEG). The 2DEG can then be affected by ferroelectric polarization switching, and may even retain ferroelectric properties coexisting with the conducting behavior. The paper by Bréhin reports indications of this behavior in a 2DEG at the surface of ferroelectric Ca-SrTiO.
Atsutoshi Ikeda, Mayo Kawaguchi, Shun Koibuchi, Tatsuki Hashimoto, Takuto Kawakami, Shingo Yonezawa, Masatoshi Sato, and Yoshiteru Maeno
Phys. Rev. Materials 4, 041801(R) (2020) - Published 13 April, 2020
Laura Bégon-Lours, Martijn Mulder, Pavan Nukala, Sytze de Graaf, Yorick A. Birkhölzer, Bart Kooi, Beatriz Noheda, Gertjan Koster, and Guus Rijnders
Phys. Rev. Materials 4, 043401 (2020) - Published 7 April, 2020
Cheng Lu and Changfeng Chen
Phys. Rev. Materials 4, 043402 (2020) - Published 10 April, 2020
E. V. Skopin, L. Rapenne, J. L. Deschanvres, E. Blanquet, G. Ciatto, L. Pithan, D. D. Fong, M.-I. Richard, and H. Renevier
Phys. Rev. Materials 4, 043403 (2020) - Published 27 April, 2020
Maxwell D. Radin, John C. Thomas, and Anton Van der Ven
Phys. Rev. Materials 4, 043601 (2020) - Published 8 April, 2020
Jianwei Xiao and Chuang Deng
Phys. Rev. Materials 4, 043602 (2020) - Published 15 April, 2020
Koichi Kusakabe, Atsuki Wake, Akira Nagakubo, Kensuke Murashima, Mutsuaki Murakami, Kanta Adachi, and Hirotsugu Ogi
Phys. Rev. Materials 4, 043603 (2020) - Published 20 April, 2020
Jesse L. Kern, Peter R. Barry, and Brian B. Laird
Phys. Rev. Materials 4, 043604 (2020) - Published 24 April, 2020
Nicolò Grilli, Edmund Tarleton, Philip D. Edmondson, Maxim N. Gussev, and Alan C. F. Cocks
Phys. Rev. Materials 4, 043605 (2020) - Published 27 April, 2020
F. Lyzwa, A. Chan, J. Khmaladze, K. Fürsich, B. Keimer, C. Bernhard, M. Minola, and B. P. P. Mallett
Phys. Rev. Materials 4, 043606 (2020) - Published 28 April, 2020
S. Hubmann, G. V. Budkin, M. Otteneder, D. But, D. Sacré, I. Yahniuk, K. Diendorfer, V. V. Bel'kov, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, V. S. Varavin, V. G. Remesnik, S. A. Tarasenko, W. Knap, and S. D. Ganichev
Phys. Rev. Materials 4, 043607 (2020) - Published 28 April, 2020
Jinghui Miao, Baoming Wang, and Carl V. Thompson
Phys. Rev. Materials 4, 043608 (2020) - Published 30 April, 2020
First-order amorphous-to-amorphous phase transitions (polyamorphic transitions) are rarely observed and have been associated with pressure or temperature changes. The authors report first-order polyamorphic transitions caused by changes in composition. Observations were made during electrochemical insertion of lithium into amorphous silicon films under potentiostatic conditions. Kinetic analyses using the Johnson-Mehl-Avrami-Kolmogorov model applied to measurements of current as a function of time at different overpotentials indicate nucleation and growth of Li-rich phases throughout the volume of the films. This conclusion is supported by electron microscope images of twophase amorphous films with image contrast provided through preferential high energy electron sputtering of Li from Li-rich phases.
J. Smutna, R. M. Fogarty, M. R. Wenman, and A. P. Horsfield
Phys. Rev. Materials 4, 043801 (2020) - Published 10 April, 2020
Sara Kadkhodaei and Ali Davariashtiyani
Phys. Rev. Materials 4, 043802 (2020) - Published 13 April, 2020
Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zakhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, and Harald Schneider
Phys. Rev. Materials 4, 044001 (2020) - Published 14 April, 2020
Cheng Lu and Changfeng Chen
Phys. Rev. Materials 4, 044002 (2020) - Published 15 April, 2020
Yoon Jang Chung, K. A. Villegas Rosales, K. W. Baldwin, K. W. West, M. Shayegan, and L. N. Pfeiffer
Phys. Rev. Materials 4, 044003 (2020) - Published 17 April, 2020
I. F. Gilmutdinov, I. R. Mukhamedshin, and H. Alloul
Phys. Rev. Materials 4, 044201 (2020) - Published 16 April, 2020
Y. Satake, J. Shiogai, G. P. Mazur, S. Kimura, S. Awaji, K. Fujiwara, T. Nojima, K. Nomura, S. Souma, T. Sato, T. Dietl, and A. Tsukazaki
Phys. Rev. Materials 4, 044202 (2020) - Published 21 April, 2020
Although BiSe is one of the most studied topological insulators, it has been difficult so far to observe the quantized anomalous Hall (QAH) effect due to the difficulty in the formation of a gapless chiral state in the gap formed by hybridization of surface states. The authors have developed the molecular beam epitaxial growth of paramagnetic Fe-doped BiSe-based heterostructures with well-controlled thickness and Bi/Sb composition ratio. The application of a magnetic field resulted in the emergence of QAH conductance driven by a giant exchange splitting of topological states. The demonstration of finely tuned architectures of topological materials will accelerate in-depth understanding of the topological phase transitions.
Z. Y. Liu, T. Zhang, S. X. Xu, P. T. Yang, Q. Wang, H. C. Lei, Y. Sui, Y. Uwatoko, B. S. Wang, H. M. Weng, J. P. Sun, and J.-G. Cheng
Phys. Rev. Materials 4, 044203 (2020) - Published 28 April, 2020
Yuya Haraguchi and Hiroko Aruga Katori
Phys. Rev. Materials 4, 044401 (2020) - Published 3 April, 2020
Benedikt Eggert, Markus E. Gruner, Katharina Ollefs, Ellen Schuster, Nico Rothenbach, Michael Y. Hu, Jiyong Zhao, Thomas S. Toellner, Wolfgang Sturhahn, Rossitza Pentcheva, Beatriz Roldan Cuenya, Esen E. Alp, Heiko Wende, and Werner Keune
Phys. Rev. Materials 4, 044402 (2020) - Published 6 April, 2020
E. P. Kenny, G. David, N. Ferré, A. C. Jacko, and B. J. Powell
Phys. Rev. Materials 4, 044403 (2020) - Published 7 April, 2020
Hari Babu Vasili, David Pesquera, Manuel Valvidares, Pierluigi Gargiani, Eric Pellegrin, Federica Bondino, Elena Magnano, Alessandro Barla, and Josep Fontcuberta
Phys. Rev. Materials 4, 044404 (2020) - Published 7 April, 2020
Joya A. Cooley, Joshua D. Bocarsly, Emily C. Schueller, Emily E. Levin, Efrain E. Rodriguez, Ashfia Huq, Saul H. Lapidus, Stephen D. Wilson, and Ram Seshadri
Phys. Rev. Materials 4, 044405 (2020) - Published 13 April, 2020
Bingjie Liu, Hui Wang, Cheng Xu, Xiaopeng Liu, Qianfan Zhang, Tianli Zhang, Plamen Stamenov, John Michael David Coey, and Chengbao Jiang
Phys. Rev. Materials 4, 044406 (2020) - Published 22 April, 2020
Arnab Pal, Manu Mohan, Adyam Venimadhav, and Pattukkannu Murugavel
Phys. Rev. Materials 4, 044407 (2020) - Published 24 April, 2020
Yasuhide Mochizuki, Ha-Jun Sung, Akira Takahashi, Yu Kumagai, and Fumiyasu Oba
Phys. Rev. Materials 4, 044601 (2020) - Published 13 April, 2020
Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan, and Samuel Graham
Phys. Rev. Materials 4, 044602 (2020) - Published 23 April, 2020
Seunghyun Lee, Noejung Park, and Junhyeok Bang
Phys. Rev. Materials 4, 044603 (2020) - Published 23 April, 2020
Qijing Wang, Emilio J. Juarez-Perez, Sai Jiang, Mingfei Xiao, Jun Qian, Eun-Sol Shin, Yong-Young Noh, Yabing Qi, Yi Shi, and Yun Li
Phys. Rev. Materials 4, 044604 (2020) - Published 27 April, 2020
M. Szot, P. Pfeffer, K. Dybko, A. Szczerbakow, L. Kowalczyk, P. Dziawa, R. Minikayev, T. Zajarniuk, K. Piotrowski, M. U. Gutowska, A. Szewczyk, T. Story, and W. Zawadzki
Phys. Rev. Materials 4, 044605 (2020) - Published 29 April, 2020
Ha-Jun Sung, Yasuhide Mochizuki, and Fumiyasu Oba
Phys. Rev. Materials 4, 044606 (2020) - Published 30 April, 2020
Yunhao Li, Shiqiao Du, Zheng-Yu Weng, and Zheng Liu
Phys. Rev. Materials 4, 044801 (2020) - Published 14 April, 2020
Peitao Liu, Jiangang He, Bongjae Kim, Sergii Khmelevskyi, Alessandro Toschi, Georg Kresse, and Cesare Franchini
Phys. Rev. Materials 4, 045001 (2020) - Published 15 April, 2020
Mohammad Alidoust, David Kleiven, and Jaakko Akola
Phys. Rev. Materials 4, 045002 (2020) - Published 20 April, 2020
Zachary R. Mansley, Christopher A. Mizzi, Pratik Koirala, Jianguo Wen, and Laurence D. Marks
Phys. Rev. Materials 4, 045003 (2020) - Published 27 April, 2020
Olivia Y. Long, Gopalakrishnan Sai Gautam, and Emily A. Carter
Phys. Rev. Materials 4, 045401 (2020) - Published 8 April, 2020
Chol-Jun Yu, Un-Hyok Ko, Suk-Gyong Hwang, Yun-Sim Kim, Un-Gi Jong, Yun-Hyok Kye, and Chol-Hyok Ri
Phys. Rev. Materials 4, 045402 (2020) - Published 13 April, 2020
Tribhuwan Pandey, Lucas Lindsay, Brian C. Sales, and David S. Parker
Phys. Rev. Materials 4, 045403 (2020) - Published 13 April, 2020
This theoretical and experimental work finds the simple CsCl-structure TlBr to exhibit both high and extremely low thermal conductivity in different temperature ranges. First-principles calculations demonstrate that low room-temperature lattice thermal conductivity arises from avoided-crossing-related anharmonicity (only effective at appreciable temperatures) and multiple related lattice near instabilities. Evidence for ‘localized oscillator’ thermal transport, originally hypothesized by Einstein, is also presented.
C. Franco, A. Wustrow, B. Xia, A. M. Baccarella, F. Burgos, J. Nicasio, E. Dooryhee, J. R. Neilson, and J. W. Simonson
Phys. Rev. Materials 4, 045404 (2020) - Published 13 April, 2020
Christian Kameni Boumenou, Finn Babbe, Amala Elizabeth, Michele Melchiorre, Conrad Spindler, Jérome Guillot, Harry Mönig, Susanne Siebentritt, and Alex Redinger
Phys. Rev. Materials 4, 045405 (2020) - Published 15 April, 2020
Yan Li, Zachary D. Hood, and N. A. W. Holzwarth
Phys. Rev. Materials 4, 045406 (2020) - Published 21 April, 2020
J. Ruiz-Franco, F. Camerin, N. Gnan, and E. Zaccarelli
Phys. Rev. Materials 4, 045601 (2020) - Published 20 April, 2020
Wenwen Li and Yasunobu Ando
Phys. Rev. Materials 4, 045602 (2020) - Published 28 April, 2020
Srđan Begić, Fangfang Chen, Erlendur Jónsson, and Maria Forsyth
Phys. Rev. Materials 4, 045801 (2020) - Published 1 April, 2020
Mayanak K. Gupta, Sanjay K. Mishra, Ranjan Mittal, Baltej Singh, Prabhatasree Goel, Sanghamitra Mukhopadhyay, Rakesh Shukla, Srungarpu N. Achary, Avesh K. Tyagi, and Samrath L. Chaplot
Phys. Rev. Materials 4, 045802 (2020) - Published 8 April, 2020
V. S. Chaitanya Kolluru and Richard G. Hennig
Phys. Rev. Materials 4, 045803 (2020) - Published 16 April, 2020
C. Notthoff, S. Jordan, A. Hadley, P. Mota-Santiago, R. G. Elliman, W. Lei, N. Kirby, and P. Kluth
Phys. Rev. Materials 4, 046001 (2020) - Published 10 April, 2020
Sampo Inkinen, Lide Yao, and Sebastiaan van Dijken
Phys. Rev. Materials 4, 046002 (2020) - Published 28 April, 2020
Active control over the concentration or distribution of oxygen vacancies in transition metal oxides enables manipulation of their structural, magnetic, electronic transport, and optical properties. Topotactic oxidation or reduction reactions involving annealing under different ambient conditions are often used to manipulate the oxygen concentration. In this paper, using in situ scanning transmission electron microscopy, the authors demonstrate a reversible structural phase transition in perovskite LaSrCoO films during heating/cooling cycles while the environment and oxygen vacancy concentration are kept constant. Switching between two oxygen-deficient structures is shown to arise from a local reordering of the oxygen vacancies by thermal strain imposed by the substrate. This approach presents new opportunities for switchable ionic devices.