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Experimental observation of high intrinsic thermal conductivity of AlN

Zhe Cheng1, Yee Rui Koh2, Abdullah Mamun3, Jingjing Shi1, Tingyu Bai4, Kenny Huynh4, Luke Yates1, Zeyu Liu5, Ruiyang Li5 et al.

Eungkyu Lee5, Michael E. Liao4, Yekan Wang4, Hsuan Ming Yu4, Maki Kushimoto6, Tengfei Luo5, Mark S. Goorsky4, Patrick E. Hopkins2,8,9, Hiroshi Amano7, Asif Khan3, and Samuel Graham1,10,*

  • 1George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 2Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
  • 3Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA
  • 4Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA
  • 5Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
  • 6Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku 464–8603, Nagoya, Japan
  • 7Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku 464–8601, Nagoya, Japan
  • 8Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
  • 9Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
  • 10School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

  • *Corresponding author: sgraham@gatech.edu
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Phys. Rev. Materials 4, 044602 – Published 23 April, 2020

DOI: https://doi.org/10.1103/PhysRevMaterials.4.044602

Abstract

Wurtzite AlN is an ultrawide bandgap semiconductor that has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing high-quality materials. This work reports the growth of thick (>15 μm) AlN layers by metal-organic chemical vapor deposition and experimental observation of intrinsic thermal conductivity from 130 to 480 K that matches density-functional-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than commercially available bulk AlN. The thermal conductivity of these commercially available bulk AlN substrates are also measured as comparison. To interpret the reduced thermal conductivity, a simple Callaway model is built. This work demonstrates the possibility of obtaining theoretically high values of thermal conductivity in AlN and will impact the thermal management and reliability of future electronic and optoelectronics devices.

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Phys. Rev. Materials 4, 044602– Published 23 April, 2020
  • Received 15 January 2020
  • Accepted 13 March 2020
Article part of CHORUS
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