Randall D. Kamien
Phys. Rev. Applied 20, 030001 (2023) - Published 25 September, 2023
Abhinav S. Sharma, Muhammad Hanif, Stephen P. Bremner, Michael P. Nielsen, Murad J. Y. Tayebjee, Fiacre E. Rougieux, Nicholas J. Ekins-Daukes, and Andreas Pusch
Phys. Rev. Applied 20, 034001 (2023) - Published 1 September, 2023
Hot-carrier solar cells (HCSCs) are one option for achieving solar-energy conversion more efficiently than conventional single-junction cells. Due to challenging material requirements, the development of HCSCs has been limited to proof-of-concept devices. By examining heat flow in HCSCs, this study suggests expanding their characterization to include the study of carrier temperatures for various contact configurations and biases. The authors show that hotter is not always better: High carrier temperatures may be a sign of excessively high barriers to extraction—an insight that could adjust expectations and interpretations of hot-carrier temperatures in devices.
Matteo Aluffi, Thomas Vasselon, Seddik Ouacel, Hermann Edlbauer, Clément Geffroy, Preden Roulleau, D. Christian Glattli, Giorgos Georgiou, and Christopher Bäuerle
Phys. Rev. Applied 20, 034005 (2023) - Published 5 September, 2023
Single-electron sources are vital for modern nanoelectronics, enabling advances in the emerging field of electron quantum optics. However, their performance is limited by the current method for generating single electrons by applying Lorentzian voltage pulses on the Fermi sea of a quantum conductor. The authors introduce a Fourier synthesis-based voltage pulse generator, allowing the generation and in-situ characterization of a 27-ps electron wave packet in an electronic Mach-Zehnder interferometer. This advancement can potentially enable the study of ultrafast dynamics in quantum nanoelectronic systems and the generation of high-frequency flying-electron qubits.
Adam Whitney, Chuanpu Liu, Tiffany S. Santos, Rajesh V. Chopdekar, Matthew Carey, Galen Street, Vijaysankar Kalappattil, Keira Leistikow, and Mingzhong Wu
Phys. Rev. Applied 20, 034006 (2023) - Published 6 September, 2023
The efficiency of spin-transfer-torque magnetic random-access memory (MRAM) critically depends on the damping of the free layer. As MRAM cells operate above room temperature, it is crucial to determine the damping parameter of the free layer at elevated temperatures. This study uses ferromagnetic resonance techniques to measure the damping of MRAM free layers up to 520 K. The data show significant differences in temperature dependence between conventional and low-damping free-layer designs, paving the way for MRAM cells with lower switching current. These insights could impact the development of more efficient and thermally stable MRAM technologies.
T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G.V. Astakhov, and P.V. Santos
Phys. Rev. Applied 20, 034017 (2023) - Published 11 September, 2023
Silicon vacancies in 4-SiC are color centers with promising applications in quantum technologies, but spin control of the centers generated in a hexagonal local crystallographic environment has yet to be demonstrated above cryogenic temperatures. The authors use the dynamic strain of surface acoustic waves to overcome this limitation and efficiently excite spin transitions in the excited states of these color centers up to room temperature. The acoustic spin control of silicon vacancies opens possibilities for the implementation of efficient quantum spin control and sensing protocols using spin optomechanics.
Vishal Varma and T.S. Mahesh
Phys. Rev. Applied 20, 034030 (2023) - Published 14 September, 2023
Long-lived states (LLSs) in nuclear magnetic resonance have diverse applications, from medical imaging to chemical analysis to quantum information processing, but were hitherto observed primarily in isotropic phases. The authors prepare LLS in an anisotropic environment of a liquid crystal and observe its survival across the phase transition to the isotropic phase. This study could pave the way for trapping LLS in the symmetric spin pair of an isotropic phase after breaking symmetry in an anisotropic phase, and motivate the realization of LLS in the solid phase, which will have implications for solid-state qubits toward achieving longer lifetimes in addition to long-range interactions.
M. R. Hogg, M.G. House, P. Pakkiam, and M.Y. Simmons
Phys. Rev. Applied 20, 034066 (2023) - Published 27 September, 2023
Quantum computing devices have the potential to solve problems that are beyond even the most powerful modern supercomputers. Most quantum hardware operates at temperatures near absolute zero, but controlling a quantum computer at cryogenic temperatures using signals propagating from room temperature becomes infeasible for large-scale processors. The authors explore a device that allows control signals to be generated on-chip at cryogenic temperatures, potentially mitigating this cryogenic bottleneck. Their device is fabricated in silicon using established technologies for quantum processors, providing a pathway towards a hybrid quantum-classical integrated circuit.
Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak
Phys. Rev. Applied 20, 034067 (2023) - Published 28 September, 2023
Many methods to automatically tune silicon spin qubits are limited by reliability and data efficiency, which makes them less likely to be scalable. The authors demonstrate a reliable, efficient, physics-informed tuning algorithm (PIT) for navigating to a target charge configuration⏤a prerequisite to forming qubits. This tuning method combines machine learning and physical intuition with an algorithm that leverages one-dimensional scans (rays) and conventional peak-finding to navigate from a coarse, unknown device state to a desired charge occupation efficiently and effectively. PIT enables the transformation of an uncalibrated circuit to a functioning quantum processor.
Yuichi Yamazaki, Yuta Masuyama, Kazutoshi Kojima, and Takeshi Ohshima
Phys. Rev. Applied 20, L031001 (2023) - Published 5 September, 2023
Quantum sensors based on silicon vacancies () in SiC are crucial for precise device design and simulations, but their practical application is hampered by the low sensitivity of temperature. This study introduces a temperature measurement protocol that increases signal intensity by an order of magnitude. By diverting part of the ground state optically detected magnetic resonance signal for temperature measurement, and leveraging simultaneous resonance of the ground state and excited state, the protocol significantly boosts performance. This leap in measurement sensitivity could make -based quantum sensors far more effective and versatile.
Abhinav S. Sharma, Muhammad Hanif, Stephen P. Bremner, Michael P. Nielsen, Murad J. Y. Tayebjee, Fiacre E. Rougieux, Nicholas J. Ekins-Daukes, and Andreas Pusch
Phys. Rev. Applied 20, 034001 (2023) - Published 1 September, 2023
Hot-carrier solar cells (HCSCs) are one option for achieving solar-energy conversion more efficiently than conventional single-junction cells. Due to challenging material requirements, the development of HCSCs has been limited to proof-of-concept devices. By examining heat flow in HCSCs, this study suggests expanding their characterization to include the study of carrier temperatures for various contact configurations and biases. The authors show that hotter is not always better: High carrier temperatures may be a sign of excessively high barriers to extraction—an insight that could adjust expectations and interpretations of hot-carrier temperatures in devices.
Hong Li, Yuhang Liu, Fengbin Liu, and Jing Lu
Phys. Rev. Applied 20, 034002 (2023) - Published 1 September, 2023
Andrea Meo, Francesca Garescì, Victor Lopez-Dominguez, Davi Rodrigues, Eleonora Raimondo, Vito Puliafito, Pedram Khalili Amiri, Mario Carpentieri, and Giovanni Finocchio
Phys. Rev. Applied 20, 034003 (2023) - Published 5 September, 2023
S. Posen, M. Checchin, O.S. Melnychuk, T. Ring, I. Gonin, and T. Khabiboulline
Phys. Rev. Applied 20, 034004 (2023) - Published 5 September, 2023
Matteo Aluffi, Thomas Vasselon, Seddik Ouacel, Hermann Edlbauer, Clément Geffroy, Preden Roulleau, D. Christian Glattli, Giorgos Georgiou, and Christopher Bäuerle
Phys. Rev. Applied 20, 034005 (2023) - Published 5 September, 2023
Single-electron sources are vital for modern nanoelectronics, enabling advances in the emerging field of electron quantum optics. However, their performance is limited by the current method for generating single electrons by applying Lorentzian voltage pulses on the Fermi sea of a quantum conductor. The authors introduce a Fourier synthesis-based voltage pulse generator, allowing the generation and in-situ characterization of a 27-ps electron wave packet in an electronic Mach-Zehnder interferometer. This advancement can potentially enable the study of ultrafast dynamics in quantum nanoelectronic systems and the generation of high-frequency flying-electron qubits.
Adam Whitney, Chuanpu Liu, Tiffany S. Santos, Rajesh V. Chopdekar, Matthew Carey, Galen Street, Vijaysankar Kalappattil, Keira Leistikow, and Mingzhong Wu
Phys. Rev. Applied 20, 034006 (2023) - Published 6 September, 2023
The efficiency of spin-transfer-torque magnetic random-access memory (MRAM) critically depends on the damping of the free layer. As MRAM cells operate above room temperature, it is crucial to determine the damping parameter of the free layer at elevated temperatures. This study uses ferromagnetic resonance techniques to measure the damping of MRAM free layers up to 520 K. The data show significant differences in temperature dependence between conventional and low-damping free-layer designs, paving the way for MRAM cells with lower switching current. These insights could impact the development of more efficient and thermally stable MRAM technologies.
J.P. van Soest, C.A. Potts, S. Peiter, A. Sanz Mora, and G.A. Steele
Phys. Rev. Applied 20, 034007 (2023) - Published 6 September, 2023
Xin-Rui Li, Jia-Jia Feng, Bu-Chen Ping, Yang Sun, Da-Jian Wu, and Badreddine Assouar
Phys. Rev. Applied 20, 034008 (2023) - Published 6 September, 2023
Haoyi Cheng, Jingwen Guo, Xin Zhang, and Wenjing Ye
Phys. Rev. Applied 20, 034009 (2023) - Published 6 September, 2023
Yu Zhu, Boyuan Chi, Leina Jiang, Xiaoyan Guo, Yu Yan, and Xiufeng Han
Phys. Rev. Applied 20, 034010 (2023) - Published 7 September, 2023
N. G. Chatzarakis, S. Germanis, I. Thyris, C. Katsidis, A. Stavrinidis, G. Konstantinidis, Z. Hatzopoulos, and N. T. Pelekanos
Phys. Rev. Applied 20, 034011 (2023) - Published 7 September, 2023
Go Itami and Osamu Sakai
Phys. Rev. Applied 20, 034012 (2023) - Published 7 September, 2023
Yishu Su, Ying Li, Minghong Qi, Sebastien Guenneau, Huagen Li, and Jian Xiong
Phys. Rev. Applied 20, 034013 (2023) - Published 7 September, 2023
Joon Sang Kang, Dung Vu, Minyue Zhu, and Joseph P. Heremans
Phys. Rev. Applied 20, 034014 (2023) - Published 8 September, 2023
K.M. Sabakar, M.I. Vaskovskaya, D.S. Chuchelov, E.A. Tsygankov, V.V. Vassiliev, S.A. Zibrov, and V.L. Velichansky
Phys. Rev. Applied 20, 034015 (2023) - Published 8 September, 2023
Hantao Sun, Feng Wu, Hsiang-Sheng Ku, Xizheng Ma, Jin Qin, Zhijun Song, Tenghui Wang, Gengyan Zhang, Jingwei Zhou, Yaoyun Shi, Hui-Hai Zhao, and Chunqing Deng
Phys. Rev. Applied 20, 034016 (2023) - Published 8 September, 2023
T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G.V. Astakhov, and P.V. Santos
Phys. Rev. Applied 20, 034017 (2023) - Published 11 September, 2023
Silicon vacancies in 4-SiC are color centers with promising applications in quantum technologies, but spin control of the centers generated in a hexagonal local crystallographic environment has yet to be demonstrated above cryogenic temperatures. The authors use the dynamic strain of surface acoustic waves to overcome this limitation and efficiently excite spin transitions in the excited states of these color centers up to room temperature. The acoustic spin control of silicon vacancies opens possibilities for the implementation of efficient quantum spin control and sensing protocols using spin optomechanics.
Erin S. Grant, Mina Barzegar Amiri Olia, Yang Li, Ella P. Walsh, Gawain McColl, Liam T. Hall, and David A. Simpson
Phys. Rev. Applied 20, 034018 (2023) - Published 11 September, 2023
Valerio Crescimanna, Jacob Taylor, Aaron Z. Goldberg, and Khabat Heshami
Phys. Rev. Applied 20, 034019 (2023) - Published 11 September, 2023
Hui Zhou, Ze-Ru Yang, Qiu-Yu Li, Chao Zeng, Si-Yu Liu, Zhong-Hua Shen, and Wei-Wei Kan
Phys. Rev. Applied 20, 034020 (2023) - Published 11 September, 2023
Ryan. K. Daniels, Matthew D. Arnold, Zachary E. Heywood, Joshua B. Mallinson, Philip J. Bones, and Simon A. Brown
Phys. Rev. Applied 20, 034021 (2023) - Published 12 September, 2023
Natalia Domenikou, Ioannis Thanopulos, Vasilios Karanikolas, and Emmanuel Paspalakis
Phys. Rev. Applied 20, 034022 (2023) - Published 12 September, 2023
Yat-Yin Au and Kevin G. Fripp
Phys. Rev. Applied 20, 034023 (2023) - Published 12 September, 2023
Aditi Sahoo, Tufan Paul, Pulak Pal, Nisha Hiralal Makani, Aswini Ghosh, and Rupak Banerjee
Phys. Rev. Applied 20, 034024 (2023) - Published 12 September, 2023
Romane Le Dizès Castell, Rosa Sinaasappel, Clémence Fontaine, Scott H. Smith, Paul Kolpakov, Daniel Bonn, and Noushine Shahidzadeh
Phys. Rev. Applied 20, 034025 (2023) - Published 13 September, 2023
Mohammad Rezaei-Pandari, Mohammad Mirzaie, Calin Ioan Hojbota, Tae Gyu Pak, Sang Beom Kim, Geon Woo Lee, Reza Massudi, Ali Reza Niknam, Seong Ku Lee, Ki-Yong Kim, and Chang Hee Nam
Phys. Rev. Applied 20, 034026 (2023) - Published 13 September, 2023
Ants Remm, Sebastian Krinner, Nathan Lacroix, Christoph Hellings, François Swiadek, Graham J. Norris, Christopher Eichler, and Andreas Wallraff
Phys. Rev. Applied 20, 034027 (2023) - Published 13 September, 2023
Cheng-Peng Liang, Yang Liu, Fei-Fei Li, Shu-Wai Leung, Yin Poo, and Jian-Hua Jiang
Phys. Rev. Applied 20, 034028 (2023) - Published 13 September, 2023
Shaojie Hu, Shinya Yamada, Po-Chun Chang, Wen-Chin Lin, Kohei Hamaya, and Takashi Kimura
Phys. Rev. Applied 20, 034029 (2023) - Published 14 September, 2023
Vishal Varma and T.S. Mahesh
Phys. Rev. Applied 20, 034030 (2023) - Published 14 September, 2023
Long-lived states (LLSs) in nuclear magnetic resonance have diverse applications, from medical imaging to chemical analysis to quantum information processing, but were hitherto observed primarily in isotropic phases. The authors prepare LLS in an anisotropic environment of a liquid crystal and observe its survival across the phase transition to the isotropic phase. This study could pave the way for trapping LLS in the symmetric spin pair of an isotropic phase after breaking symmetry in an anisotropic phase, and motivate the realization of LLS in the solid phase, which will have implications for solid-state qubits toward achieving longer lifetimes in addition to long-range interactions.
Y. Suzuki, S. Kawabata, T. Yamamoto, and S. Masuda
Phys. Rev. Applied 20, 034031 (2023) - Published 14 September, 2023
Likuan Ma, Quanyang Tao, Yang Chen, Songlong Liu, Zheyi Lu, Liting Liu, Zhiwei Li, Donglin Lu, Yiliu Wang, Lei Liao, and Yuan Liu
Phys. Rev. Applied 20, 034032 (2023) - Published 14 September, 2023
Takayuki Kubo
Phys. Rev. Applied 20, 034033 (2023) - Published 15 September, 2023
Antonio A. Valido and Alejandro J. Castro
Phys. Rev. Applied 20, 034034 (2023) - Published 15 September, 2023
Guoli Lin, Yiqun Xie, Li Shu, and Xiang Ye
Phys. Rev. Applied 20, 034035 (2023) - Published 15 September, 2023
Pedro Rosario, Alan C. Santos, C.J. Villas-Boas, and R. Bachelard
Phys. Rev. Applied 20, 034036 (2023) - Published 15 September, 2023
A.L. Chekhov, Y. Behovits, U. Martens, B.R. Serrano, M. Wolf, T.S. Seifert, M. Münzenberg, and T. Kampfrath
Phys. Rev. Applied 20, 034037 (2023) - Published 18 September, 2023
Xin He, Prasanna Pakkiam, Adil A. Gangat, Michael J. Kewming, Gerard J. Milburn, and Arkady Fedorov
Phys. Rev. Applied 20, 034038 (2023) - Published 18 September, 2023
Xudan Chai, Teng Ma, Qihao Guo, Zhangqi Yin, Hao Wu, and Qing Zhao
Phys. Rev. Applied 20, 034039 (2023) - Published 18 September, 2023
Artem Bercha, Grzegorz Muziol, Mikolaj Chlipala, and Witold Trzeciakowski
Phys. Rev. Applied 20, 034040 (2023) - Published 19 September, 2023
K. Murali, Manaoj Aravind, and Sudeshna Sinha
Phys. Rev. Applied 20, 034041 (2023) - Published 19 September, 2023
Chao Li, Xiao Chai, Linzhao Zhuo, Bochao Wei, Ardalan Lotfi, Farrokh Ayazi, and Chandra Raman
Phys. Rev. Applied 20, 034042 (2023) - Published 19 September, 2023
Yue Wu, Jun-Hao Liu, Ya-Fei Yu, Zhi-Ming Zhang, and Jin-Dong Wang
Phys. Rev. Applied 20, 034043 (2023) - Published 19 September, 2023
Francisco Escudero, David Fernández-Fernández, Gabriel Jaumà, Guillermo F. Peñas, and Luciano Pereira
Phys. Rev. Applied 20, 034044 (2023) - Published 20 September, 2023
Andreas Thurn, Jochen Bissinger, Stefan Meinecke, Paul Schmiedeke, Sang Soon Oh, Weng W. Chow, Kathy Lüdge, Gregor Koblmüller, and Jonathan J. Finley
Phys. Rev. Applied 20, 034045 (2023) - Published 20 September, 2023
Aldritt Scaria Madathiparambil, Kim Robert Tekseth, Fredrik K. Mürer, Benoît Cordonnier, Nicolaine Agofack, Jessica McBeck, Pierre Cerasi, François Renard, Basab Chattopadhyay, and Dag W. Breiby
Phys. Rev. Applied 20, 034046 (2023) - Published 20 September, 2023
Joel N. Johnson, Danielle R. Haverkamp, Yi-Hsin Ou, Khanh Kieu, Nils T. Otterstrom, Peter T. Rakich, and Ryan O. Behunin
Phys. Rev. Applied 20, 034047 (2023) - Published 20 September, 2023
Hiroki Fukuda, Akira Nagakubo, Oliver B. Wright, Kazuhiro Kyotani, and Hirotsugu Ogi
Phys. Rev. Applied 20, 034048 (2023) - Published 21 September, 2023
Haibo Wang, Gong Zhang, Jishen Zhang, Chao Wang, Haiwen Xu, Yan Liang, Charles Lim, and Xiao Gong
Phys. Rev. Applied 20, 034049 (2023) - Published 21 September, 2023
C. Pellet-Mary, M. Perdriat, P. Huillery, and G. Hétet
Phys. Rev. Applied 20, 034050 (2023) - Published 21 September, 2023
Long Zhang, Jing Pan, Min Li, Ivo A.W. Filot, Emiel J.M. Hensen, and Hui Wang
Phys. Rev. Applied 20, 034051 (2023) - Published 21 September, 2023
Marc Rovirola, M. Waqas Khaliq, Blai Casals, Michael Foerster, Miguel Angel Niño, Lucía Aballe, Jens Herfort, Joan Manel Hernàndez, Ferran Macià, and Alberto Hernández-Mínguez
Phys. Rev. Applied 20, 034052 (2023) - Published 22 September, 2023
A.D. Liu, Z.Y. Liu, K. Li, Y.L. Yao, C.T. Zhou, S.P. Zhu, X.T. He, and B. Qiao
Phys. Rev. Applied 20, 034053 (2023) - Published 22 September, 2023
M.A. Beck, M. Selvanayagam, A. Carniol, S. Cairns, and C.P. Mancini
Phys. Rev. Applied 20, 034054 (2023) - Published 22 September, 2023
M. Zhu, M. Matsubara, and E. Bellotti
Phys. Rev. Applied 20, 034055 (2023) - Published 22 September, 2023
T.M. Hazard, A.J. Kerman, K. Serniak, and C. Tahan
Phys. Rev. Applied 20, 034056 (2023) - Published 25 September, 2023
Lezheng Fang and Michael J. Leamy
Phys. Rev. Applied 20, 034057 (2023) - Published 25 September, 2023
X.Y. Zhou, H. Wang, Q.M. Liu, S.J. Zhang, S.X. Xu, Q. Wu, R.S. Li, L. Yue, T.C. Hu, J.Y. Yuan, S.S. Han, T. Dong, D. Wu, and N.L. Wang
Phys. Rev. Applied 20, 034058 (2023) - Published 25 September, 2023
Tianwen Huang, Loïc Becerra, Aurélie Gensbittel, Yunlin Zheng, Hakeim Talleb, Ulises Acevedo Salas, Zhuoxiang Ren, and Massimiliano Marangolo
Phys. Rev. Applied 20, 034059 (2023) - Published 26 September, 2023
R.V. Ovcharov, B.A. Ivanov, J. Åkerman, and R.S. Khymyn
Phys. Rev. Applied 20, 034060 (2023) - Published 26 September, 2023
Jiu-Xun Sun, Hong-Chun Yang, Yang Li, and Hai-Juan Cui
Phys. Rev. Applied 20, 034061 (2023) - Published 26 September, 2023
Marika Svensson, Martin Andersson, Mattias Grönkvist, Pontus Vikstål, Devdatt Dubhashi, Giulia Ferrini, and Göran Johansson
Phys. Rev. Applied 20, 034062 (2023) - Published 26 September, 2023
L.-Y. Wang, J.-F. Wei, K.-F. Cui, S.-L. Su, M. Feng, L.-L. Yan, G. Chen, H.-Z. Guo, and C.-X. Shan
Phys. Rev. Applied 20, 034063 (2023) - Published 27 September, 2023
J.R. Capers
Phys. Rev. Applied 20, 034064 (2023) - Published 27 September, 2023
Andreas Ketterer and Thomas Wellens
Phys. Rev. Applied 20, 034065 (2023) - Published 27 September, 2023
M. R. Hogg, M.G. House, P. Pakkiam, and M.Y. Simmons
Phys. Rev. Applied 20, 034066 (2023) - Published 27 September, 2023
Quantum computing devices have the potential to solve problems that are beyond even the most powerful modern supercomputers. Most quantum hardware operates at temperatures near absolute zero, but controlling a quantum computer at cryogenic temperatures using signals propagating from room temperature becomes infeasible for large-scale processors. The authors explore a device that allows control signals to be generated on-chip at cryogenic temperatures, potentially mitigating this cryogenic bottleneck. Their device is fabricated in silicon using established technologies for quantum processors, providing a pathway towards a hybrid quantum-classical integrated circuit.
Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak
Phys. Rev. Applied 20, 034067 (2023) - Published 28 September, 2023
Many methods to automatically tune silicon spin qubits are limited by reliability and data efficiency, which makes them less likely to be scalable. The authors demonstrate a reliable, efficient, physics-informed tuning algorithm (PIT) for navigating to a target charge configuration⏤a prerequisite to forming qubits. This tuning method combines machine learning and physical intuition with an algorithm that leverages one-dimensional scans (rays) and conventional peak-finding to navigate from a coarse, unknown device state to a desired charge occupation efficiently and effectively. PIT enables the transformation of an uncalibrated circuit to a functioning quantum processor.
Tiemo Pedergnana and Nicolas Noiray
Phys. Rev. Applied 20, 034068 (2023) - Published 28 September, 2023
Xiao-Hai Zhan, Zhen-Qiu Zhong, Shuang Wang, Zhen-Qiang Yin, Wei Chen, De-Yong He, Guang-Can Guo, and Zheng-Fu Han
Phys. Rev. Applied 20, 034069 (2023) - Published 28 September, 2023
D. Salomoni, Y. Peng, L. Farcis, S. Auffret, M. Hehn, G. Malinowski, S. Mangin, B. Dieny, L.D. Buda-Prejbeanu, R.C. Sousa, and I.L. Prejbeanu
Phys. Rev. Applied 20, 034070 (2023) - Published 28 September, 2023
Vasu Dev and Vishwa Pal
Phys. Rev. Applied 20, 034071 (2023) - Published 29 September, 2023
Chang-Kang Hu, Jiahao Yuan, Bruno A. Veloso, Jiawei Qiu, Yuxuan Zhou, Libo Zhang, Ji Chu, Orkesh Nurbolat, Ling Hu, Jian Li, Yuan Xu, Youpeng Zhong, Song Liu, Fei Yan, Dian Tan, R. Bachelard, Alan C. Santos, C.J. Villas-Boas, and Dapeng Yu
Phys. Rev. Applied 20, 034072 (2023) - Published 29 September, 2023
L. Kneale, S.T. Wilson, T. Appleyard, J. Armitage, N. Holland, and M. Malek
Phys. Rev. Applied 20, 034073 (2023) - Published 29 September, 2023
M.V. Petrenko, A.S. Pazgalev, and A.K. Vershovskii
Phys. Rev. Applied 20, 034074 (2023) - Published 29 September, 2023
Jing Zhao, Jianlong Liu, Ruirui Jiang, Kaiqiang Yang, and Baoqing Zeng
Phys. Rev. Applied 20, 037001 (2023) - Published 18 September, 2023
Technological progress in optical communication and signal-processing systems looks to ultrafast optical switches and modulators, and to ultrafast electron sources for imaging. This review discusses how to use surface plasmons to advance miniaturization and reduce energy consumption. Obstacles here include integrating such devices with conventional techniques, and the diffraction limit preventing the realization of subwavelength scale. In particular, the authors offer insight on the development trends and design of such ultrafast devices, in terms of the various advantages of surface plasmons in different nanostructures and materials.