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Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric InAs Quantum Dot

N. G. Chatzarakis1,2,*, S. Germanis3, I. Thyris1, C. Katsidis4, A. Stavrinidis2,4, G. Konstantinidis2,4, Z. Hatzopoulos2,4, and N. T. Pelekanos1,2

  • 1Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece
  • 2Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Greece
  • 3College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
  • 4Department of Physics, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece

  • *nchatz@materials.uoc.gr
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Phys. Rev. Applied 20, 034011 – Published 7 September, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.20.034011

Abstract

We demonstrate single-photon emission in strongly confined piezoelectric (211)B InAs/GaAs quantum dots at an elevated temperature of 230 K, exploiting the enhanced exciton-biexciton splittings in the system. This is a high temperature allowing for noncryogenic operation of a single-photon emitter based on III-arsenide quantum dots. A determining factor toward this result is the incorporation of the quantum dot layer in between GaAs/AlAs short-period superlattices, improving drastically the carrier confinement and temperature stability of the dot emission, allowing the observation of distinct exciton and biexciton emission peaks up to 260 K and single-photon emission at a high temperature.

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Phys. Rev. Applied 20, 034011– Published 7 September, 2023
  • Received 29 March 2023
  • Revised 22 June 2023
  • Accepted 31 July 2023
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