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  • Letter
  • Open Access

Observation of multilayer quantum Hall effect in the charge density wave material CaCu4As2

Souvik Sasmal1,*, Vikas Saini1, Sitaram Ramakrishnan2,3, Gourav Dwari1, Bishal Baran Maity1, Jin-Ke Bao2, Rajib Mondal4, Vikram Tripathi5, Sander van Smaalen2 et al.

Bahadur Singh1,† and A. Thamizhavel1,‡

  • 1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
  • 2Laboratory of Crystallography, University of Bayreuth, 95447 Bayreuth, Germany
  • 3Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan
  • 4UGC-DAE Consortium for Scientific Research, Kolkata Centre, Bidhannagar, Kolkata 700 106, India
  • 5Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India

  • *sasmalsouvik6@gmail.com
  • †bahadur.singh@tifr.res.in
  • ‡thamizh@tifr.res.in
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Phys. Rev. Research 4, L012011 – Published 7 February, 2022

DOI: https://doi.org/10.1103/PhysRevResearch.4.L012011

Abstract

Low-dimensional layered materials manifest an inherent tendency towards the formation of symmetry reduced charge density wave (CDW) states with exotic properties. Here, we elucidate the anisotropic transport properties of CaCu4As2, which crystallizes in a rhombohedral lattice. Temperature-dependent single-crystal x-ray diffraction in conjunction with thermodynamic and transport measurements reveal that CaCu4As2 undergoes a structural or CDW transition below 51 K. For I∥[12¯10], angular-dependent Shubnikov–de Haas oscillations reveal a two-dimensional nature of the charge carriers contributing to the bulk transport in accord with our calculated Fermi surface. In the inverse Hall resistance versus 1/B plot, quantized Hall plateaus are observed. CaCu4As2 thus provides a new platform to understand the coexistence of both the CDW and quantum Hall effect in materials.

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Phys. Rev. Research 4, L012011– Published 7 February, 2022
  • Received 14 July 2021
  • Revised 1 December 2021
  • Accepted 10 January 2022
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