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Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures

Anamul Md. Hoque, Dmitrii Khokhriakov, Bogdan Karpiak, and Saroj P. Dash*

  • Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden

  • *Corresponding author: saroj.dash@chalmers.se

Phys. Rev. Research 2, 033204 – Published 6 August, 2020

DOI: https://doi.org/10.1103/PhysRevResearch.2.033204

Abstract

A spin-polarized current source using nonmagnetic layered materials is promising for next-generation all-electrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe2 via the charge-spin conversion process. Using a hybrid device of TaTe2 in a van der Waals heterostructure with graphene, the spin polarization in TaTe2 is efficiently injected and detected by nonlocal spin-switch, Hanle spin precession, and inverse spin Hall effect measurements. Systematic experiments at different bias currents and gate voltages in a vertical geometry prove the TaTe2 as a nonmagnetic spin source at room temperature. These findings demonstrate the possibility of making an all-electrical spintronic device in a two-dimensional van der Waals heterostructure, which can be essential building blocks in energy-efficient spin-orbit technology.

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