This work explores the luminescence properties of melt-grown ${\mathrm{ZnGa}}_2{\mathrm{O}}_4$ single crystals using photoluminescence spectroscopy and first-principles calculations. The photoluminescence spectra consist of numerous overlapping broad bands in the spectral range between 1.4 and 3.9 eV, which can be divided into low- (1.4–2.7 eV) and high-energy (2.7–3.9 eV) parts. When using below-gap excitation, the photoluminescence spectrum shows distinct orange and ultraviolet luminescence bands peaking at 1.99 and 3.36 eV, respectively. The results are interpreted by using configuration coordinate diagrams derived from hybrid functional calculations for self-trapped holes, as well as for the most stable native defects and their complexes. The calculations show that self-trapped holes, Zn antisites, and Zn-Ga antisite pairs give rise to strongly overlapping luminescence lines that are compatible with the high-energy side of the broad emission. For the low-energy side, we suggest Zn vacancies and their complexes with Ga antisites as potential intrinsic origins. The calculated Zn vacancy lineshape fits well with the orange luminescence band. Ga vacancies are unlikely to be the origin of the observed visible and ultraviolet emission, as the calculated luminescence lines occur in the infrared region. Moreover, complexes between the Ga vacancy and one or two Ga antisites, which would show luminescence at higher energies, are only metastable. It is more favorable for a Ga antisite to jump into the Ga vacancy, replacing the Ga antisite and vacancy with a Zn vacancy.

A newly identified magnetic phase called altermagnet is being actively studied because of its unprecedented spin-dependent phenomena. Among the candidate materials, CrSb has a particularly high ordering temperature and a large spin-splitting energy, but its transport properties have remained unexplored. In this study, we report the magnetotransport properties of CrSb measured on single crystals. We found that the Hall resistivity shows a nonlinear dependence on the magnetic field at low temperatures. From symmetry-based considerations, however, this behavior cannot be attributed to an anomalous Hall effect, but to a multicarrier effect. A multicarrier fitting to the in-plane conductivity tensor revealed the presence of carriers with high mobility in CrSb, which is an advantage for efficient spin current generation.

Magnetic topological insulators provide a platform for emergent phenomena arising from the interplay between magnetism and band topology. Here we report the single crystal growth, crystal structure, magnetic and transport properties, as well as the neutron scattering studies of topological insulator series ${\left({\mathrm{Ge}}_{1-\delta -x}{\mathrm{Mn}}_x\right)}_2{\mathrm{Bi}}_2{\mathrm{Te}}_5$ $(x\le 0.47, 0.11\le \delta \le 0.20)$. Upon doping up to $x=0.47$, the lattice parameter $c$ decreases by 0.8%, while the lattice parameter $a$ remains nearly unchanged. Significant Ge vacancies and Ge/Bi site mixing are revealed via elemental analysis as well as refinements of the neutron and x-ray diffraction data, resulting in holes dominating the charge transport. At $x=0.47$, below 10.8 K, a bilayer A-type antiferromagnetic ordered state emerges, featuring an ordered moment of 3.0(3) ${\mu }_B/\mathrm{Mn}$ at 5 K, with the $c$ axis as the easy axis. Magnetization data unveils a much stronger effective interlayer antiferromagnetic exchange interaction and a much smaller uniaxial anisotropy compared to ${\mathrm{MnBi}}_2{\mathrm{Te}}_4$. We attribute the former to the shorter nearest-neighbor Mn-Mn interlayer superexchange path and the latter to the smaller ligand-field splitting in ${\left({\mathrm{Ge}}_{1-\delta -x}{\mathrm{Mn}}_x\right)}_2{\mathrm{Bi}}_2{\mathrm{Te}}_5$. Our study demonstrates that this series of materials holds promise for the investigation of the layer Hall effect and quantum metric nonlinear Hall effect.

We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide ${\mathrm{BaZrS}}_3$ and the halide $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$. These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally activated nonradiative recombination, but the nonradiative recombination rate in ${\mathrm{BaZrS}}_3$ is four orders of magnitude faster than in $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$, for the crystals studied here. Raman spectroscopy reveals that the effects of phonon anharmonicity are far more pronounced in $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$ than in ${\mathrm{BaZrS}}_3$. Further, although both materials feature a large dielectric response due to low-energy polar optical phonons, the phonons in $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$ are substantially lower in energy than in ${\mathrm{BaZrS}}_3$. Our results suggest that electron-phonon coupling in ${\mathrm{BaZrS}}_3$ is more effective at nonradiative recombination than in $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$ and that ${\mathrm{BaZrS}}_3$ may also have a substantially higher concentration of nonradiative recombination centers than $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$. The low defect concentration in $\mathrm{Cs}\mathrm{Pb}{\mathrm{Br}}_3$ may be related to the ease of lattice reconfiguration, typified by anharmonic bonding. It remains to be seen to what extent these differences are inherent to the chalcogenide and halide perovskites and to what extent they can be affected by materials processing.

Intrinsic magnetic topological insulators, in which magnetism and topology are inherently combined, are excellent systems to realize exotic phenomena such as the quantum anomalous Hall effect. However, there are many reports that show that the experimental samples are not so ideal and the effect of the unintentional disorder in these systems needs to be considered carefully. In this study, we investigate the role of misplaced magnetic atoms as well as nonmagnetic elements in the intrinsic magnetic topological insulator heterostructures based on ${\mathrm{MnBi}}_2{\mathrm{Se}}_4$ and ${\mathrm{Bi}}_2{\mathrm{Se}}_3$. We find that Mn atoms are not only placed at the central layer of the ${\mathrm{MnBi}}_2{\mathrm{Se}}_4$ septuple layer (SL) but also intermix with Bi (antisite Mn) as well as reside in the van der Waals (vdW) gap. Through a detailed comparison between the experimental and theoretical x-ray magnetic circular dichroism (XMCD) spectra, we find that the antisite Mn is coupled ferromagnetically, whereas the vdW Mn couple antiferromagnetically to the Mn in the central atomic plane of the SL. Furthermore, we detect a clear XMCD signal in nonmagnetic Se, providing unambiguous evidence of its magnetic interaction with Mn.

Using coarse-grained molecular dynamics simulations, we study the mechanical properties and stress transfer mechanisms of weakly entangled, glassy polymer blends compatibilized by diblock, triblock, or pentablock copolymers. For a given number of copolymer junctions per unit area, copolymer architecture is found to play a minimal role, whereas block degree of polymerization and copolymer loading qualitatively impact the interfacial mechanics. Explicitly, the stress-strain and density-strain curves reveal distinctly different deformation mechanisms at low and high compatibilizer loading related to cavitation and fibril formation near the A/B interface. Furthermore, the competition between interfacial cavitation and chain pullout from the bulk leads to nonmonotonic dependencies of the toughness and strain-at-break on copolymer loading. For sufficiently long copolymers, the simulations predict an optimum loading that produces mechanical properties that nearly match those of the homopolymer glass. These results imply that moderate loading of long block copolymers is ideal for effective compatibilization and stress transfer across the interface.

Colloidal gels undergo a phenomenon known as physical aging, i.e., a continuous change of their physical properties with time. To date, most of the research effort on aging in gels has been focused on suspensions of hard colloidal particles. In this Letter, we tackle the case of soft colloidal “micelles” comprised of proteins, in which gelation is induced by the addition of an enzyme. Using time-resolved mechanical spectroscopy, we monitor the viscoelastic properties of a suspension of colloidal micelles through the sol-gel transition and subsequent aging. We show that the microscopic scenario underpinning the macroscopic aging dynamics comprises two sequential steps. First, the gel microstructure undergoes rapid coarsening, as observed by optical microscopy, followed by arrest. Second, aging occurs solely through a contact-driven mechanism, as evidenced by the square-root dependence of the yield stress with the elastic modulus measured at different ages of the gel. These results provide a comprehensive understanding of aging in enzymatic milk gels, crucial for a broad range of dairy products, and for soft colloids in general.

Hydrogen-enhanced decohesion (HEDE) is one of the many mechanisms of hydrogen embrittlement, a phenomenon that severely impacts structural materials such as iron and iron alloys. Grain boundaries (GBs) play a critical role in this mechanism, where they can provide trapping sites or act as hydrogen diffusion pathways. The interaction of H with GBs and other crystallographic defects, and thus the solubility and distribution of H in the microstructure, depends on the concentration, chemical potential, and local stress. Therefore, for a quantitative assessment of HEDE, a generalized solution energy in conjunction with the cohesive strength as a function of hydrogen coverage is needed. In this paper, we carry out density functional theory calculations to investigate the influence of H on the decohesion of the $\mathrm{\Sigma }5\left(310\right)\left[001\right]$ and $\mathrm{\Sigma }3\left(112\right)\left[1\overline{1}0\right]$ symmetrical tilt GBs in bcc Fe, as examples for open and close-packed GB structures. A method to identify the segregation sites at the GB plane is proposed. The results indicate that at higher local concentrations, H leads to a significant reduction of the cohesive strength of the GB planes, significantly more pronounced at the $\mathrm{\Sigma }5$ than at the $\mathrm{\Sigma }3$ GB. Interestingly, at finite stress, the $\mathrm{\Sigma }3$ GB becomes more favorable for H solution, as opposed to the case of zero stress, where the $\mathrm{\Sigma }5$ GB is more attractive. This suggests that, under certain conditions, stresses in the microstructure can lead to a redistribution of H to the stronger grain boundary, which opens a path to designing H-resistant microstructures. To round up our study, we investigate the effects of typical alloying elements in ferritic steel, C, V, Cr, and Mn, on the solubility of H and the strength of the GBs.

We outline how pairs of strongly immiscible elements, referred to here as antagonistic pairs, can be used to synthesize ternary compounds with low or quasi-reduced-dimensional motifs intrinsically built into their crystal structures. By identifying third elements that are mutually compatible with a given antagonistic pair, ternary compounds can be formed in which the third element segregates the immiscible atoms into spatially separated substructures. Quasi-low-dimensional structural units, such as sheets, chains, or clusters are a natural consequence of the immiscible atoms seeking to avoid close contact in the solid state. As proof of principle, we present the discovery, crystal growth, and basic physical properties of ${\mathrm{La}}_4{\mathrm{Co}}_{4}X$ (X = Pb, Bi, Sb), a family of intermetallic compounds based on the antagonistic pairs Co-Pb and Co-Bi. ${\mathrm{La}}_4{\mathrm{Co}}_{4}X$ adopts an orthorhombic crystal structure (space group Pbam) containing quasi-two-dimensional Co slabs and La-X polyhedra that stack in an alternating manner along the $a$ axis. Consistent with our proposal, the La atoms separate the Co and X substructures, ensuring there are no direct contacts between the members of the immiscible (antagonistic) pair. Within the Co slabs, the atoms occupy the vertices of corner sharing tetrahedra and triangles, and this bonding motif produces narrow electronic bands near the Fermi level that favor magnetism. The Co is moment bearing in each ${\mathrm{La}}_4{\mathrm{Co}}_{4}X$ compound studied, and we show that whereas ${\mathrm{La}}_4{\mathrm{Co}}_4\mathrm{Pb}$ behaves as a three-dimensional antiferromagnet with T${}_{\text{N}}=220\mathrm{K}$, ${\mathrm{La}}_4{\mathrm{Co}}_4\mathrm{Bi}$ and ${\mathrm{La}}_4{\mathrm{Co}}_4\mathrm{Sb}$ have behavior consistent with low-dimensional magnetic coupling and ordering, with T${}_{\text{N}}=153\mathrm{K}$ and 143 K, respectively. In addition to the Pb-, Bi-, and Sb-based ${\mathrm{La}}_4{\mathrm{Co}}_{4}X$ compounds, we also were likely able to produce an analogous ${\mathrm{La}}_4{\mathrm{Co}}_4\mathrm{Sn}$ in polycrystalline form, although we were unable to isolate single crystals. We anticipate that identifying and using mutually compatible third elements together with an antagonistic pair represents a generalizable design principle for discovering new materials and new structure types containing low-dimensional substructures.

Recent intensive studies in metallic kagome systems have revealed various correlated topological and electronic states, leading to their spintronic applications. The kagome ferromagnetic metal ${\mathrm{Fe}}_3\mathrm{Sn}$ has been found to host a topological nodal plane near the Fermi energy and exhibits large transverse transport responses. Here we report the fabrication of the epitaxial thin films of ${\mathrm{Fe}}_3\mathrm{Sn}$ and the observation of its large anomalous Nernst effect (ANE). Structural and magnetic measurements reveal (0001)-orientated epitaxial growth of kagome $D{0}_{19}$ ${\mathrm{Fe}}_3\mathrm{Sn}$ and the magnetic easy plane along the substrate plane. Moreover, transport measurements confirm the large ANE of 2.4 µV/K at room temperature, comparable to that of the bulk polycrystalline samples. The obtained ${\mathrm{Fe}}_3\mathrm{Sn}$ film should be useful for thermoelectric applications, because the binary compound based on inexpensive elements exhibits large spontaneous ANE voltage under an out-of-plane heat current due to the magnetic and electronic states stabilized by the magnetic anisotropy.

Compared to time-reversal symmetry-protected ${\mathbb{Z}}_2$ topological insulators and Dirac/Weyl semimetals, there are significantly fewer candidates for topological crystalline insulators. ${\mathrm{SrAg}}_4{\mathrm{Sb}}_2$ is predicted to exhibit topological crystalline insulator behavior when considering spin-orbit coupling. In this study, we systematically investigate single crystals of ${\mathrm{SrAg}}_4{\mathrm{Sb}}_2$ using electrical transport and magnetic torque measurements, along with first-principles calculations. Our transport data reveals its compensated semimetal nature with a magnetoresistance up to around 700% at 2 K and 9 T. Analysis of de Haas–van Alphen oscillations uncovers a Fermi surface consisting of three distinct Fermi pockets with light effective masses. Comparison between the three-dimensional fermiology obtained from our oscillation data and the first-principles calculations demonstrates excellent agreement. This confirms the accuracy of the calculations, which indicate a band inversion centered at the $T$ point and identify the existence of nontrivial tube and needle hole Fermi pockets at $\mathrm{\Gamma }$, alongside one trivial diamond electron pocket at the $F$ point in the Brillouin zone. Furthermore, symmetry and topology analysis results in two potential sets of topological invariants, suggesting the emergence of two-dimensional gapless Dirac surface states either on the $ab$ planes or on both the $ab$ planes and mirror planes, protected by crystal symmetries. Therefore, ${\mathrm{SrAg}}_4{\mathrm{Sb}}_2$ emerges as a promising candidate topological crystalline insulator.

The ${A\mathrm{V}}_3{\mathrm{Sb}}_5$ $(A=\mathrm{K}, \mathrm{Rb}, \mathrm{Cs})$ kagome materials host an interplay of emergent phenomena including superconductivity, charge density wave states, and nontrivial electronic structure topology. The band structures of these materials exhibit a rich variety of features like Dirac crossings, saddle points associated with van Hove singularities, and flat bands prompting significant investigations into the in-plane electronic behavior. However, recent findings including the charge density wave ordering and effects due to pressure or chemical doping point to the importance of understanding interactions between kagome layers. Probing this $c$-axis electronic structure via experimental methods remains challenging due to limitations of the crystals and, therefore, rigorous computational approaches are necessary to study the interlayer interactions. Here we use first-principles approaches to study the electronic structure of ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$ with emphasis on the $k_z$ dispersion. We find that the inclusion of nonlocal and dynamical many-body correlation has a substantial impact on the interlayer band structure. We present band behavior that additionally supports the integration of symmetry in accurately plotting electronic structures and influences further analysis like the calculation of topological invariants.

Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. ${\mathrm{Bi}}_x\mathrm{TeI}$ films grown at room temperature and $230\mathrm{K}$ exhibit dramatic magnetotransport effects due to disorder, localization, and electron correlation effects, including a metal-insulator transition at a composition that depends on growth temperature. The increased disorder caused by growth at 230 K causes the conductivity to decrease by several orders of magnitude for several compositions of ${\mathrm{Bi}}_x\mathrm{TeI}$. The transition from metal to insulator with decreasing composition $x$ is accompanied by a decrease in the dephasing length, which leads to the disappearance of the weak-antilocalization effect. Electron-electron interactions cause low temperature conductivity corrections on the metallic side and Efros-Shklovskii variable range hopping on the insulating side, effects which are absent in single crystalline ${\mathrm{Bi}}_x\mathrm{TeI}$. The observation of a tunable metal-insulator transition and the associated strong localization and quantum effects in ${\mathrm{Bi}}_x\mathrm{TeI}$ shows the possibility of tuning spin transport in quantum materials via disorder.

Ge/SiGe heterostructure quantum well structures based on Ge two-dimensional hole gas have become one of the most promising research directions for preparing spin quantum bits due to their low disorder and high mobility. In this study, high-quality virtual substrates were epitaxially grown on 8-in silicon substrates using reduced pressure chemical vapor deposition. The surface roughness of the samples was optimized by adjusting key parameters such as the thickness of the reverse gradient buffer layer and ${\mathrm{Si}}_{1-x}{\mathrm{Ge}}_x$ buffer layer. Based on the strain modulation of dislocation dynamics, high-quality strained quantum wells with a density of stress accumulation points (DSAP) of $0.301/\mu {\mathrm{m}}^2$ and surface RMS roughness less than 3 nm were achieved. Ultimately, an ultrashallow heavily constrained and undoped quantum well with a well depth of 15 nm, in-plane compressive strain of ${\varepsilon }_{\parallel }=-1.19\%$, and a mobility of $3.382\times {10}^5{\mathrm{cm}}^2/\mathrm{Vs}$ was obtained. A novel characterization method for quantum wells was proposed based on the defined DSAP. The ultrashallow quantum well depth and higher compressive strain enable the quantum well to maintain a high effective $g$ factor (up to 8.3), becoming the cradle for fully electrically controlled and microwave coupled quantum bits.

Despite the fact that first-principles methods are critical tools in the study and design of materials today, the accuracy of density functional theory (DFT) prediction is fundamentally reliant on the exchange-correlation functional chosen to approximate the interactions between electrons. Although the general improvement in accurately calculating the bandgap with the Heyd-Scuseria-Ernzerhof (HSE) hybrid-functional method over the conventional semilocal DFT is well accepted, other properties such as formation energy have not been systematically studied and have yet to be evaluated thoroughly for different classes of materials. A high-throughput hybrid-functional DFT investigation on materials bandgaps and formation energies is therefore performed in this work. By evaluating over a thousand materials, including metals, semiconductors, and insulators, we have quantitatively verified that the materials bandgaps obtained through HSE [mean absolute error (MAE) = 0.687 eV] are more accurate than those from the Perdew-Burke-Ernzerhof (PBE) functional (MAE = 1.184 eV) when compared to the experimental values. For formation energies, PBE systematically underestimates the magnitude of the formation enthalpies (MAE = 0.175 eV/atom), whereas formation enthalpies obtained from the HSE method are generally more accurate (MAE = 0.147 eV/atom). We have also found that HSE significantly increases the accuracy of formation energy prediction for insulators and strongly bound compounds. A primary application of this new dataset is achieved by building a cokriging multifidelity machine learning (ML) model to quickly predict the bandgaps with HSE-level accuracy when its PBE bandgap is available from DFT calculations. The preliminary goal of our ML model, benchmarked in this work, is to select the semiconductors and insulators which may have been mislabeled as metals from the DFT-PBE calculations in the existing Open Quantum Materials Database. The performance of the cokriging model in reliably predicting HSE bandgaps with quantified model uncertainty is analyzed by comparing the results against published experimental data from the literature.

In a comparative and systematic study on finite-size particles the isostructural van der Waals materials ScOCl, ScOBr, and FeOCl, are investigated. The origin of unconventional magnetic properties of FeOCl ($S$ = 5/2) is elucidated. Experimental evidence for fluctuations are presented and discussed in relation to soliton condensation into topological edge states. The anisotropy within ${}_{\infty }^2\left[{\mathrm{FeO}}_{4/4}{\mathrm{Cl}}_{2/2}\right]$ corrugated layers gives rise to the formation of solitons (1D) with parameters given here and to the development of 2D-Ising magnetic order around 20 K. The latter is identified by a $\lambda$ anomaly in the specific heat and a kink in the magnetic susceptibility. Concomitantly, the canting angle of moments along the spin-chain direction changes. We attribute this to a magnetoelastic effect. The finite size of the chains ($\approx 143$ Fe-sites $\approx {\xi }_s$ at 20 K) results in the confinement of solitons, which condense into breathers. In small applied magnetic fields the dynamics unfold and a spin-glass-like phase below 5 K is established. Phonon anharmonicities revealed by Raman scattering are explained by diffusional dynamics and are in agreement with the derived soliton energy from Mössbauer spectroscopy.

$\alpha$-Sn thin films can exhibit a variety of topologically nontrivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $\alpha$-Sn thin films. $\alpha$-Sn growth on InSb often results in out-diffusion of indium, a $p$-type dopant. By growing $\alpha -\mathrm{Sn}$ via molecular beam epitaxy on the Sb-rich $\mathrm{c}(4\times 4)$ surface reconstruction of InSb(001) rather than the In-rich $\mathrm{c}(8\times 2)$, we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $\alpha$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and angle-integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.

Raman spectroscopy is a powerful and nondestructive method that is widely used to study the vibrational properties of solids or molecules. Simulations of finite-temperature Raman spectra rely on obtaining polarizabilities along molecular-dynamics trajectories, which is computationally highly demanding if calculated from first principles. Machine learning force fields (MLFF) are becoming widely used for accelerating molecular-dynamics simulations, but machine-learning models for polarizability are still rare. In this work, we present and compare three polarizability models for obtaining Raman spectra in conjunction with MLFF molecular-dynamics trajectories: (i) a model based on projection to primitive cell eigenmodes, (ii) a bond polarizability model, and (iii) symmetry-adapted Gaussian process regression (SA-GPR) using a smooth overlap of atomic positions. In particular, we investigate the accuracy of these models for different systems and how much training data are required. Models are first applied to boron arsenide, where the first- and second-order Raman spectra are studied as well as the effect of boron isotopes. With ${\mathrm{MoS}}_2$ we study the applicability of the models for highly anisotropic systems and for simulating resonant Raman spectra. Finally, inorganic halide perovskites are studied with a particular interest in simulating the spectra across phase transitions. All models can be used to efficiently predict polarizabilities and are applicable to large systems and long simulation times, and while all three models were found to perform similarly for BAs and ${\mathrm{MoS}}_2$, only SA-GPR offers sufficient flexibility to accurately describe complex anharmonic materials like the perovskites.

Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report on the successful synthesis of iron-based superconductor $\mathrm{FeS}{\mathrm{e}}_x\mathrm{T}{\mathrm{e}}_{1-x}$ (FST) thin films across the entire composition range of $0\le x\le 1$ and its heterostructure with a magnetic topological insulator (TI) by using molecular beam epitaxy. Superconductivity is observed in the FST films with an optimal superconducting transition temperature $T_c\sim 12$ K at around $x=0.1$. We found that superconductivity survives in the very Te-rich films ($x\le 0.05$), showing stark contrast with bulk crystals with suppression of superconductivity due to an appearance of bicollinear antiferromagnetism accompanied by a monoclinic structural transition. By examining thickness $t$ dependence of magnetic susceptibility and electrical transport properties, we observed a trend where anomalies associated with the first-order structural transition broaden in films with below $t\sim 100$ nm. We infer this observation suggests a suppression of the structural instability near substrates. Furthermore, we fabricated an all chalcogenide-based heterointerface between FST and a magnetic TI ${\left(\mathrm{Cr},\mathrm{Bi},\mathrm{Sb}\right)}_2\mathrm{T}{\mathrm{e}}_3$, observing both superconductivity and a large anomalous Hall conductivity. The anomalous Hall conductivity increases with decreasing temperature, approaching the quantized value of $e^2/h$ down to the measurable minimum temperature at $T_c$. The result suggests coexistence of magnetic and superconducting gaps at low temperatures opening at the top and bottom surfaces, respectively. Our magnetic TI/superconductor heterostructure could be an ideal platform to explore chiral Majorana edge mode.

We examined the piezomagnetic effect in an antiferromagnet MnTe, which is a candidate material for altermagnetism with a high critical temperature. We observed that the magnetization develops with the application of stress and revealed that the piezomagnetic coefficient $Q$ is $1.38\times {10}^{-8}$ ${\mu }_{\mathrm{B}}$/Mn/MPa at 300 K. The poling-field dependence of magnetization indicates that the antiferromagnetic domain can be controlled using the piezomagnetic effect. We demonstrate that piezomagnetic effect is one of the suitable methods for the detection of broken time-reversal symmetry and the domain control in antiferromagnets with broken time-reversal symmetry, including altermagnets.