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Domain Wall Creep in an Ising Ultrathin Magnetic Film

S. Lemerle1, J. Ferré1, C. Chappert2, V. Mathet2, T. Giamarchi1, and P. Le Doussal3

  • 1Laboratoire de Physique des Solides, URA CNRS 02, Bâtiment 510, Université Paris-Sud, 91405 Orsay, France
  • 2Institut d'Electronique Fondamentale, URA CNRS 022, Bâtiment 220, Université Paris-Sud, 91405 Orsay, France
  • 3CNRS-LPTENS, 24 Rue Lhomond, 75230 Paris Cedex 05, France

Phys. Rev. Lett. 80, 849 – Published 26 January, 1998

DOI: https://doi.org/10.1103/PhysRevLett.80.849

Abstract

We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocity measurements down to the so called creep regime show that the average energy barrier scales as (1/H)μ with μ=0.24±0.04 and that the correlation function along a MDW is governed by a wandering exponent ζ=0.69±0.07, in very good agreement with theories giving μ=0.25 and ζ=2/3. This is the first direct measurement of the creep regime for a moving interface in a disordered medium.

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