Nanoscale Observation of a Grain Boundary Related Growth Mode in Thin Film Reactions

M. Seibt; S. Buschbaum; U. Gnauert; W. Schröter; D. Oelgeschläger

doi:10.1103/PhysRevLett.80.774

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Nanoscale Observation of a Grain Boundary Related Growth Mode in Thin Film Reactions

M. Seibt, S. Buschbaum, U. Gnauert^*, and W. Schröter

D. Oelgeschläger^†

IV.Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 345, Bunsenstr.13-15, D-37073 Göttingen, Germany

Institut für Metallphysik der Universität Göttingen and Sonderforschungsbereich 345, Hospitalstr.3-5, D-37073 Göttingen, Germany

^*Present address: DLR Projekt ARES/ERAS GmbH, Hannah-Vogt-Str.1, D-37085 Göttingen, Germany.
^†Present address: Philips RHW, P.O. Box 540240 D-22502 Hamburg, Germany.

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Phys. Rev. Lett. 80, 774 – Published 26 January, 1998

DOI: https://doi.org/10.1103/PhysRevLett.80.774

Abstract

We report the atomic scale observation of a thin film growth mode related to grain boundaries in multilayers of polycrystalline gold and amorphous silicon. Using differential scanning calorimetry, in situ x-ray diffraction, and high-resolution electron microscopy, we observe silicide nucleation to take place at grain boundaries in the polycrystalline gold films followed by lateral silicide growth parallel to gold/silicon interfaces. This growth mode is related to solid-state reactions at low temperatures where atomic transport is restricted to grain and interphase boundaries. It demonstrates the importance of thin film microstructure for phase selection during thin film reactions at low temperatures.

References (33)

W. L. Johnson, Prog. Mater. Sci 30, 81 (1986).
R. Bormann, Mater. Res. Soc. Symp. Proc. 343, 169 (1994).
R. W. Bené, J. Appl. Phys. 61, 1826 (1987).
U. Gösele and K. N. Tu, J. Appl. Phys. 53, 3252 (1982).
U. Gösele and K. N. Tu, J. Appl. Phys. 66, 3252 (1989).
E. Ma, C. V. Thompson, and L. A. Clevenger, J. Appl. Phys. 69, 2211 (1991).
K. R. Coffey, L. A. Clevenger, K. Barmak, D. A. Rudman, and C. V. Thompson, Appl. Phys. Lett. 55, 853 (1989).
R. W. Balluffi and J. M. Blakely, Thin Solid Films 25, 363 (1975).
M. Y. Lee and P. A. Bennett, Phys. Rev. Lett. 74, 4460 (1995).
F. M. dHeurle, P. Gas, and J. Philibert, Mater. Res. Soc. Symp. Proc. 343, 181 (1994).
F. M. dHeurle, J. de Physique IV (France) 6, C2-29 (1996).
K. R. Coffey and K. Barmak, Mat. Res. Soc. Symp. Proc. 343, 193 (1994).
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M. von Allmen, S. S. Lau, M. Mäenpää, and B. Y. Tsaur, Appl. Phys. Lett. 36, 207 (1980).
U. Gnauert et al., (to be published); U. Gnauert, thesis, University of Göttingen,1994; S. Buschbaum, diploma thesis, University of Göttingen,1995.
B. Mohadjeri, J. Linnros, B. G. Svensson, and M. Östling, Phys. Rev. Lett. 68, 1872 (1992).
T. J. Konno and R. Sinclair, Inst. Phys. Conf. Ser. 134, 173 (1993).
In situ x-ray diffraction data were obtained in the limited $2 Θ$ -range between 40° and 49°. Integrated intensity $I_{int}$ and width $w$ (defined as the FWHM) were obtained by fitting a Gaussian and a constant background to the Au diffraction peaks. Total x-ray diffraction spectra were recorded after in situ measurments to confirm silicide formation.
B. D. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA,1978).
DSC experiments obtained at two different heating rates are consistent with two-dimensional growth of the silicide [[20]], i.e., with an exponent $n = 2$ in the Johnson-Mehl-Avramai kinetics (c.f. [[26]]). Extrapolation of these data to reaction rates accessible by our in situ XRD setup yields reaction temperatures below 90 °C.
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W. H. Wang, H. Y. Bai, Y. Zhang, H. Chen, and W. K. Wang, J. Appl. Phys. 73, 7217 (1993).
Preparation of cross-section TEM foils using ion-beam thinning at liquid nitrogen temperature resulted in silicide formation even in unreacted samples.
M. Seibt, S. Buschbaum, and U. Gnauert, Inst. Phys. Conf. Ser. 146, 545 (1995).
S. Coffa, J. M. Poate, D. C. Jacobson, W. Frank, and W. Gustin, Phys. Rev. B 45, 8355 (1992).
A. A. Pasa, H. R. Paes, and W. Losch, J. Non-Cryst. Solids 137&138, 1087 (1991).
F. K. LeGoues, V. P. Kesan, S. S. Iyer, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 64, 2038 (1990).
D. E. Jesson, S. J. Pennycook, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. 68, 2062 (1992).

[c1] W. L. Johnson, Prog. Mater. Sci 30, 81 (1986).

[c2] R. Bormann, Mater. Res. Soc. Symp. Proc. 343, 169 (1994).

[c3] R. W. Bené, J. Appl. Phys. 61, 1826 (1987).

[c4] U. Gösele and K. N. Tu, J. Appl. Phys. 53, 3252 (1982).

[c5] U. Gösele and K. N. Tu, J. Appl. Phys. 66, 3252 (1989).

[c6] E. Ma, C. V. Thompson, and L. A. Clevenger, J. Appl. Phys. 69, 2211 (1991).

[c7] K. R. Coffey, L. A. Clevenger, K. Barmak, D. A. Rudman, and C. V. Thompson, Appl. Phys. Lett. 55, 853 (1989).

[c8] R. W. Balluffi and J. M. Blakely, Thin Solid Films 25, 363 (1975).

[c9] M. Y. Lee and P. A. Bennett, Phys. Rev. Lett. 74, 4460 (1995).

[c10] F. M. dHeurle, P. Gas, and J. Philibert, Mater. Res. Soc. Symp. Proc. 343, 181 (1994).

[c11] F. M. dHeurle, J. de Physique IV (France) 6, C2-29 (1996).

[c12] K. R. Coffey and K. Barmak, Mat. Res. Soc. Symp. Proc. 343, 193 (1994).

[c13] L. G. Harrison, Trans. Faraday Soc. 57, 1191 (1961).

[c14] H. Okamoto and T. B. Massalski, Bull. Alloy Phase Diagrams 4, 190 (1983).

[c15] B. Y. Tsaur and J. W. Mayer, Philos. Mag. A 43, 345 (1981).

[c16] L. Hultman, A. Robertson, H. T. G. Hentzell, I. Engström, and P. A. Psaras, J. Appl. Phys. 62, 3647 (1987).

[c17] F. H. Baumann and W. Schröter, Phys. Rev. B 43, 6510 (1991).

[c18] T. R. Anantharaman and C. Suryanaryana, J. Mater. Sci. 6, 1111 (1971).

[c19] M. von Allmen, S. S. Lau, M. Mäenpää, and B. Y. Tsaur, Appl. Phys. Lett. 36, 207 (1980).

[c20] U. Gnauert et al., (to be published); U. Gnauert, thesis, University of Göttingen,1994; S. Buschbaum, diploma thesis, University of Göttingen,1995.

[c21] B. Mohadjeri, J. Linnros, B. G. Svensson, and M. Östling, Phys. Rev. Lett. 68, 1872 (1992).

[c22] T. J. Konno and R. Sinclair, Inst. Phys. Conf. Ser. 134, 173 (1993).

[c23] In situ x-ray diffraction data were obtained in the limited $2 Θ$ -range between 40° and 49°. Integrated intensity $I_{int}$ and width $w$ (defined as the FWHM) were obtained by fitting a Gaussian and a constant background to the Au diffraction peaks. Total x-ray diffraction spectra were recorded after in situ measurments to confirm silicide formation.

[c24] B. D. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA,1978).

[c25] DSC experiments obtained at two different heating rates are consistent with two-dimensional growth of the silicide [[20]], i.e., with an exponent $n = 2$ in the Johnson-Mehl-Avramai kinetics (c.f. [[26]]). Extrapolation of these data to reaction rates accessible by our in situ XRD setup yields reaction temperatures below 90 °C.

[c26] J. W. Christian, Transformations in Metals and Alloys (Pergamon Press, New York,1975), Pt. I.

[c27] W. H. Wang, H. Y. Bai, Y. Zhang, H. Chen, and W. K. Wang, J. Appl. Phys. 73, 7217 (1993).

[c28] Preparation of cross-section TEM foils using ion-beam thinning at liquid nitrogen temperature resulted in silicide formation even in unreacted samples.

[c29] M. Seibt, S. Buschbaum, and U. Gnauert, Inst. Phys. Conf. Ser. 146, 545 (1995).

[c30] S. Coffa, J. M. Poate, D. C. Jacobson, W. Frank, and W. Gustin, Phys. Rev. B 45, 8355 (1992).

[c31] A. A. Pasa, H. R. Paes, and W. Losch, J. Non-Cryst. Solids 137&138, 1087 (1991).

[c32] F. K. LeGoues, V. P. Kesan, S. S. Iyer, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 64, 2038 (1990).

[c33] D. E. Jesson, S. J. Pennycook, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. 68, 2062 (1992).

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Nanoscale Observation of a Grain Boundary Related Growth Mode in Thin Film Reactions

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