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Microscopic investigation of the memory effect found in micropatterned nematic liquid crystal cells

Thet Naing Oo*, Yuuki Yasu, Munehiro Kimura, and Tadashi Akahane

  • Department of Electrical Engineering, Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

  • *tno2002@stn.nagaokaut.ac.jp
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Phys. Rev. E 76, 031705 – Published 18 September, 2007

DOI: https://doi.org/10.1103/PhysRevE.76.031705

Abstract

Isotropic untreated indium-tin-oxide layers can cause memory alignment of nematic liquid crystals. We have demonstrated an experimental method to characterize this effect by using a micropatterned surface. We tried to imprint a high tilt on an indium-tin-oxide substrate surface. We also investigated microscopic switching behavior of a memory-induced nematic liquid crystal cell by means of a vertical field effect.

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Phys. Rev. E 76, 031705– Published 18 September, 2007
  • Received 10 February 2007

© 2007 American Physical Society

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