Negative ion formation and motion in a mixture of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">CCl</mi></mrow><mrow><mn>4</mn></mrow></msub></mrow></math></span> and Ar

F. B. Yousif; H. Martínez

doi:10.1103/PhysRevE.69.046401

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Negative ion formation and motion in a mixture of ${CCl}_{4}$ and Ar

F. B. Yousif^1,* and H. Martínez²

¹Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Avenida, Universidad 1001, Colonia Chamilpa, Codigo Postal 62210 Cuernavaca, Morelos, Mexico
²Centro de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca, Morelos, P.O. Box 48-3, 62251 Cuernavaca, Morelos, Mexico

^*Electronic address: fbyousif@servm.fc.uaem.mx

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Phys. Rev. E 69, 046401 – Published 14 April, 2004

DOI: https://doi.org/10.1103/PhysRevE.69.046401

Abstract

This paper deals with the measurement of the mobility of negative ions in the mixtures of ${CCl}_{4}$ with Ar with the ${CCl}_{4}$ ratio up to $33.3 % .$ The pulsed Townsend technique was employed to produce an integrated ionic avalanche over a range of the density-reduced electric field $E / N$ for which ionization is either negligible or absent, and attachment processes are dominant, leading to the formation of mostly ${CCl}_{4}^{-} .$ The $E / N$ range of measurement was 1–50 Td $(1 Td {= 10}^{- 17} {V cm}^{2}) .$ Our measurements strongly suggest that attachment is the dominant process and only negative ions are formed.

References (15)

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[c1] R. A. Morgan, Plasma Etching in Semiconductor Fabrication (Elsevier, Amsterdam, 1985).

[c2] A. Pagamenta, M. Kimura, M. Inokuti, and K. Kowari, J. Chem. Phys. 89, 6220 (1988).

[c3] L.G. Christophorou, Nucl. Instrum. Methods Phys. Res. A 268, 424 (1988); L.G. Christophorouand and R.J. Van Brunt, IEEE Trans. Dielectr. Electr. Insul. 2, 952 (1995).

[c4] H. Itoh, Y. Miura, N. Ikuta, Y. Yakao, and H. Tagashira, J. Phys. D 21, 922 (1988); K. Satoh, H. Itoh, Y. Yakao, and H. Tagashira, 21, 931 (1988).

[c5] L. G. Christophorouand S. Hunter, in Electron-Molecule Interaction and their Applications, edited by L. G. Christophorou (Academic, New York, 1984), Vol. 2, p. 317.

[c6] L. G. Christophorou and S. Hunter, in Ref. [5].

[c7] L. G. Christophorouand M. O. Pace, Gaseous Dielectric IV (Pergamon, New York, 1984).

[c8] G.R. Burton, W.F Chan, G. Cooper, and C.E. Rion, Chem. Phys. 181, 147 (1994).

[c9] T. Marcio, N. Varella, P.P. Alexandra Natalensa, H.F. Betega Marcio, and A.P. Lima Marco, Phys. Rev. A 60, 3684 (1999).

[c10] L. David, H.F. Betega Marcio, G. Ferreira Luiz, and A.P. Lima Marco, J. Phys. B 33, 5467 (2000).

[c11] M. Hayashi, Swarm Studies and Inelestic Electron Molecule collisions (Springer, New York, 1987), p. 167.

[c12] Ken-ichi Kowari, Ki Leung, and Bernie D. Shizgal, J. Chem. Phys. 108, 1587 (1998).

[c13] J. de Urquijo and F.B. Yousif, Phys. Rev. E 68, 046406 (2003).

[c14] E. W. MacDanial and E. A. Mason, The Mobility and Diffusion of Ions in Gasses (Wiley, New York, 1973).

[c15] E. Mason and E. W. McDanial, Transport Properties of Ions in Gases (Wiley, New York, 1988).

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Negative ion formation and motion in a mixture of ${CCl}_{4}$ and Ar

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Negative ion formation and motion in a mixture of CCl4 and Ar

Abstract

References (15)

Negative ion formation and motion in a mixture of ${CCl}_{4}$ and Ar