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Numerical investigation of ion-energy-distribution functions in single and dual frequency capacitively coupled plasma reactors
Phys. Rev. E 69, 026406 – Published 23 February, 2004
DOI: https://doi.org/10.1103/PhysRevE.69.026406
Abstract
Ion-energy-distribution functions (IEDFs) are numerically investigated in capacitively coupled (cc) radio frequency (rf) discharges by a one-dimensional particle-in-cell/Monte Carlo model. The simulation considers electron-neutral collisions, various kinds of collisions of ions and with neutral, positive-negative ion, and electron-ion recombination. The influence of pressure, applied voltage amplitude, and applied frequency on the and IEDFs is presented. The dependence on the frequency regime is investigated by simulations of the mixture in single (13.56 MHz) and dual frequency or cc reactors. A comparison of the simulation results with analytical calculations in a collisionless rf sheath is discussed. The results show that the IEDFs shift toward the low energies with increasing pressure or decreasing applied voltage amplitude. The and IEDFs exhibit secondary maxima due to the charge transfer collisions. The IEDF has a peak at high energies in consistency with the average sheath potential drop. The IEDFs in the dual frequency regime are broad and bimodal.
References (46)
- W. M. Greene, M. A. Hartney, W. G. Oldham, and D. W. Hess, J. Appl. Phys. 63, 1367 (1988).
- C. Wild and P. Koidl, Appl. Phys. Lett. 54, 505 (1989); J. Appl. Phys. 69, 2909 (1991).
- J. Liu, G. L. Huppert, and H. H. Sawin, J. Appl. Phys. 68, 3916 (1990).
- A. Manenschijn, G. C. A. M. Janssen, E. van der Drift, and S. Radelaar, J. Appl. Phys. 69, 1253 (1991).
- J. K. Olthoff, R. J. Van Brunt, and S. B. Radovanov, J. Appl. Phys. 72, 4566 (1992); ibid.J. K. Olthoff, R. J. Van Brunt, S. B. Radovanov, J. A. Rees, and R. Surowiec, 75, 115 (1994).
- R. J. M. M. Snijkers, M. J. M. van Sambeek, G. M. W. Kroesen, and F. J. de Hoog, Appl. Phys. Lett. 63, 308 (1993).
- D. Barton, D. J. Heason, R. D. Short, and J. W. Bradley, Meas. Sci. Technol. 11, 1726 (2000).
- F. Becker, I. W. Rangelow, K. Maßeli, and R. Kassing, Surf. Coat. Technol. 74–75, 485 (1995).
- P. Benoit-Cattin and L. C. Bernard, J. Appl. Phys. 39, 5723 (1968).
- E. Kawamura, V. Vahedi, M. A. Lieberman, and C. K. Birdsall, Plasma Sources Sci. Technol. 8, R45 (1999).
- W. J. Goedheer, Plasma Sources Sci. Technol. 9, 507 (2000).
- M. J. Kushner, J. Appl. Phys. 58, 4024 (1985).
- A. Metze, D. W. Ernie, and H. Oskam, J. Appl. Phys. 60, 3081 (1986).
- D. Vender and R. W. Boswell, IEEE Trans. Plasma Sci. 18, 725 (1990).
- M. Surendra and D. B. Graves, IEEE Trans. Plasma Sci. 19, 144 (1991).
- F. R. Myers, M. Ramaswami, and T. S. Cale, J. Electrochem. Soc. 141, 1313 (1994).
- C. K. Birdsall and A. B. Langdon, Plasma Physics via Computer Simulation (McGraw-Hill, New York, 1985).
- C. K. Birdsall, IEEE Trans. Plasma Sci. 19, 65 (1991).
- V. Vahedi and M. Surendra, Comput. Phys. Commun. 87, 179 (1995).
- A. Okhrimovskyy, A. Bogaerts, and R. Gijbels, Phys. Rev. E 65, 037402 (2002).
- M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
- V. Georgieva, A. Bogaerts, and R. Gijbels, J. Appl. Phys. 93, 2369 (2003).
- V. Georgieva, A. Bogaerts, and R. Gijbels, J. Appl. Phys. 94, 3748 (2003).
- H. H. Goto, H.-D. Löwe, and T. Ohmi, J. Vac. Sci. Technol. A 10, 3048 (1992); IEEE Trans. Semicond. Manuf. 6, 58 (1993).
- V. Vahedi and G. DiPeso, J. Comput. Phys. 131, 149 (1997).
- H. C. Kim and V. I. Manousiouthakis, J. Vac. Sci. Technol. A 16, 2162 (1998).
- W. Tsai, G. Mueller, R. Lindquist, B. Frazier, and V. Vahedi, J. Vac. Sci. Technol. B 14, 3276 (1996).
- T. Kitajima, Y. Takeo, and T. Makabe, J. Vac. Sci. Technol. A 17, 2510 (1999); T. Kitajima, Y. Takeo, Z. Lj. Petrović, and T. Makabe, Appl. Phys. Lett. 77, 489 (2000).
- S. Rauf and M. J. Kushner, IEEE Trans. Plasma Sci. 27, 1329 (1999).
- K. Maeshige, G. Washio, T. Yagisawa, and T. Makabe, J. Appl. Phys. 91, 9494 (2002).
- E. Kawamura, C. K. Birdsall, and V. Vahedi, Plasma Sources Sci. Technol. 9, 413 (2000).
- K. Denpoh and K. Nanbu, J. Vac. Sci. Technol. A 16, 1201 (1998).
- K. Nanbu and K. Denpoh, J. Phys. Soc. Jpn. 67, 1288 (1998); K. Denpoh and K. Nanbu, Jpn. J. Appl. Phys., Part 1 39, 2804 (2000).
- A. V. Phelps and Z. Lj. Petrovic, Plasma Sources Sci. Technol. 8, R21 (1999).
- A. V. Phelps and L. C. Pitchford, Phys. Rev. A 31, 2932 (1985); A. V. Phelps et al., URL ftp://jila.colorado.edu/collison_data/
- M. Kurihara, Z. Lj. Petrovic, and T. Makabe, J. Phys. D 33, 2146 (2000).
- R. A. Bonham, Jpn. J. Appl. Phys., Part 1 33, 4157 (1994).
- A. V. Phelps, J. Phys. Chem. Ref. Data 20, 557 (1991); J. Appl. Phys. 76, 747 (1994); URL ftp://jila.colorado.edu/collision_data/
- M. R. Spalburg and E. A. Gislason, Chem. Phys. 94, 339 (1985).
- S. Rauf and M. J. Kushner, J. Appl. Phys. 82, 2805 (1997).
- J. Henriques, E. Tatarova, V. Guerra, and C. M. Ferreira, J. Appl. Phys. 91, 5622 (2002).
- N. V. Mantzaris, A. Boudouvis, and E. Gogolides, J. Appl. Phys. 77, 6169 (1995); E. Gogolides, M. Stathakopoulos, and A. Boudouvis, J. Phys. D 27, 1878 (1994).
- J. P. Booth, G. Cunge, P. Chabert, and N. Sadeghi, J. Appl. Phys. 85, 3097 (1999).
- K. Nanbu, IEEE Trans. Plasma Sci. 28, 971 (2000).
- K. Denpoh, Ph.D. thesis, Tohoku University, Sendai, Japan (in Japanese).
- B. L. Peko, I. V. Dyakov, R. L. Champion, M. V. V. S. Rao, and J. K. Olthoff, Phys. Rev. E 60, 7449 (1999).