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Effective two-dimensional envelope function theory for silicon quantum dots

Christian W. Binder1,2, Guido Burkard3, and Andrew J. Fisher2,4

  • 1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom
  • 2Quantum Motion, 9 Sterling Way, London N7 9HJ, United Kingdom
  • 3Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
  • 4Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT, United Kingdom

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Phys. Rev. B 114, 185420 – Published 17 September, 2026

DOI: https://doi.org/10.1103/f2d8-csrg

Abstract

We present a rigorous method to reduce the three-dimensional (3D) description of a quantum dot in silicon to an effective two-dimensional (2D) envelope function theory for electron spin qubits. By systematically integrating out the strongly confined vertical dimension using a Born–Oppenheimer-inspired ansatz at the envelope-function level, we derive an effective in-plane potential that faithfully captures the essential electrostatics of the full 3D system. Considering the lowest two eigenstates of the out-of-plane direction, this reduction leads to the natural and explicit emergence of the valley degree of freedom within a 2D formalism, which is derived here from first principles. We validate the accuracy of the method through comparisons with full 3D simulations and demonstrate its superiority over naive 2D slicing, particularly in the presence of interface roughness. Crucially, the reduction in dimensionality leads to substantial computational savings, making our approach particularly well suited for simulating two-electron systems, e.g., for the extraction of parameters such as the exchange coupling. Beyond its practical utility, the rigorous 2D envelope function theory that is introduced in this study incorporates valley physics in a physically grounded manner, offering conceptual clarity on the role of valley states in qubit operation and measurement.

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Outline

Information

Phys. Rev. B 114, 185420– Published 17 September, 2026
  • Received 18 October 2025
  • Revised 4 May 2026
  • Accepted 12 June 2026
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