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Interface phonons in spherical GaAs/AlxGa1−xAs quantum dots

R. M. de la Cruz

S. W. Teitsworth

M. A. Stroscio

  • Departamento de Ingeniería, Universidad Carlos III de Madrid, 28911 Leganés, Madrid, Spain

  • Department of Physics, Box 90305, Duke University, Durham, North Carolina 27708-0305

  • U.S. Army Research Office, P.O. Box 12211, Research Triangle Park, North Carolina 27709-2211

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Phys. Rev. B 52, 1489 – Published 15 July, 1995

DOI: https://doi.org/10.1103/PhysRevB.52.1489

Abstract

Within the framework of the dielectric continuum model, the interface phonon frequencies for spherical GaAs/AlxGa1−xAs quantum dots are obtained as functions of the alloy composition in the range x=0.2–1.0. By imposing electrostatic boundary conditions, the two interface phonon frequencies are calculated for the first three modes. The frequency behavior of the different modes is found to be similar. However, for each mode one of the phonon frequencies is found to be strongly dependent on x. It is demonstrated that these phonon modes play an important role in determining resonant optical absorption of quantum dots.

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Phys. Rev. B 52, 1489– Published 15 July, 1995
  • Received 23 February 1995

© 1995 American Physical Society

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