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Novel features of quantum Hall plateaus for varying interface charge

J. E. Furneaux and T. L. Reinecke

  • Naval Research Laboratory, Washington, D. C. 20375

Phys. Rev. B 29, 4792(R) – Published 15 April, 1984

DOI: https://doi.org/10.1103/PhysRevB.29.4792

Abstract

A systematic study of quantum Hall plateaus has been made in Si metal-oxide-semiconductor field-effect transistors having driftable Na+ ions. For low interface ion densities (Nox2×1011 cm2) the positions of plateaus for filled spin and valley levels exhibit unexpected shifts with respect to those for completely filled Landau levels, and the widths of plateaus for filled Landau levels increase more rapidly with interface charge than do those for filled spin and valley levels. These results have interesting implications for features of the density of states of the system and for aspects of interface electron scattering.

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