David Tománek
Phys. Rev. Applied 15, 060001 (2021) - Published 30 June, 2021
Guest Editor David Tománek reflects on the joint Collection at its closing.
Z.R. Yan, Y.Z. Liu, Y. Guang, K. Yue, J.F. Feng, R.K. Lake, G.Q. Yu, and X.F. Han
Phys. Rev. Applied 15, 064004 (2021) - Published 2 June, 2021
The , a bottleneck between storage and processor in the traditional von Neumann computing paradigm, has become increasingly serious with the rise of “Big Data”, and there is strong interest in developing logic-in-memory computing architectures. The authors propose a skyrmion-based programmable logic device with complete Boolean logic functions, a feature that has remained elusive so far. This device can realize robust and programmable logic functions under solely electrical control, in the presence of both the inhomogeneities and thermal fluctuations that are are experimentally unavoidable. This result, then, suggests a path to overcoming the memory wall.
Clemens Göhler, Maria Saladina, Yazhong Wang, Donato Spoltore, Johannes Benduhn, Karl Leo, and Carsten Deibel
Phys. Rev. Applied 15, 064009 (2021) - Published 3 June, 2021
In organic photovoltaics, the energetic characteristics of the charge-transfer state determine the device properties, and are defined by molecular interactions at the donor-acceptor interface. This study uses sensitive spectroscopy to investigate the roles of morphological disorder and molecular dynamics in charge-transfer states, which ultimately affect the open-circuit voltage. The authors model temperature-dependent data and find that dynamic, rather than static, disorder determines the optical properties of the charge-transfer states. Thus, to develop highly efficient organic solar cells, the intramolecular properties of the working materials should receive more attention.
Shahriar Aghaeimeibodi, Daniel Riedel, Alison E. Rugar, Constantin Dory, and Jelena Vučković
Phys. Rev. Applied 15, 064010 (2021) - Published 3 June, 2021
Many applications in quantum information processing require multiple, identical quantum emitters. Among various color centers in diamond, tin-vacancy centers draw attention because of their high quantum efficiency and long spin coherence. The authors study the shifts of optical-transition frequencies of these centers in an applied electric field, and importantly find that both the linear and quadratic coefficients are orders of magnitude smaller than those of non-inversion-symmetric defects such as nitrogen-vacancy centers. This low susceptibility allows the integration of tin-vacancy centers into photonic nanostructures, which is essential for efficient spin-photon interfaces.
Y.C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K.K. Vudya Sethu, F. Yasin, D. Crotti, and G.S. Kar
Phys. Rev. Applied 15, 064015 (2021) - Published 7 June, 2021
To address the large energy dissipation of our current computing architecture, nonvolatile voltage-gate-assisted spin-orbit-torque (VGSOT) MRAM combines the advantages of spin-orbit-torque (SOT) and voltage control of magnetic anisotropy (VCMA) systems. Here the authors study VGSOT writing with perpendicular magnetic tunnel junctions, and show it to be reliable, with low error rate and resilience to intensive writing stresses. The spin Hall angle and VCMA coefficient allow 30-nm junctions. A multipillar design is suggested, with high density close to 2-terminal devices and high-speed write/read performance at low operating power, suitable for embedded memory or in-memory computation.
Guillermo Fernandez Moroni, Kevin Andersson, Ana Botti, Juan Estrada, Dario Rodrigues, and Javier Tiffenberg
Phys. Rev. Applied 15, 064026 (2021) - Published 10 June, 2021
Charged-coupled devices (CCDs) are among the most promising technologies to enable experiments in the direct search for low-mass dark matter, and a new generation of compact neutrino detectors. Understanding the charge-collection efficiency of these detectors is a limiting factor for current and future experiments. The authors present a technique to characterize and measure the efficiency as a function of the charge-generation depth, with submicrometer precision. Using these tools, they furthermore compare the performance of two different back-side treatments and discuss the implications for CCD research and development.
Henry T. Aller, Jonathan A. Malen, and Alan J.H. McGaughey
Phys. Rev. Applied 15, 064043 (2021) - Published 17 June, 2021
Overheating in electronic devices is difficult to mitigate, because thermal transport across the internal interfaces is poorly understood. This study uses atomistic simulations and analytical theory to create a model that predicts how the thermal boundary conductance of a metal cap–metal contact–dielectric junction varies with contact thickness. The model contains no fitting parameters and is validated against more than 100 experimental measurements, revealing the important role played by electron-phonon coupling. Physically motivated approximations reduce the model to a simple thermal circuit that retains high predictive power, for streamlining the design of thermally efficient contacts.
Yue Fu, Yang Wu, Yingqiu Dai, Xi Qin, Xing Rong, and Jiangfeng Du
Phys. Rev. Applied 15, L061001 (2021) - Published 24 June, 2021
With the power of chemistry for inexpensive synthesis of tailored systems, molecular qubits are attractive candidates for quantum computing. Here decoherence persists as a major obstacle; for its effective suppression, the properties of environmental noise must be elucidated. Traditional noise spectroscopy with spurious harmonics leads to false identification of nuclear spins. The authors demonstrate a protocol for noise-spectrum analysis without spurious harmonics, through dynamical decoupling. This result enables enhanced coherence for molecular qubits, and could be quite significant for quantum information processing based on such systems.
Tobias Grünbaum, Sebastian Bange, Wei Jiang, Anna E. Leung, Tamim A. Darwish, Paul L. Burn, and John M. Lupton
Phys. Rev. Applied 15, 064001 (2021) - Published 1 June, 2021
Lijuan Fan and Jun Mei
Phys. Rev. Applied 15, 064002 (2021) - Published 1 June, 2021
Christian Ortiz Pauyac, Collins Ashu Akosa, Gen Tatara, Mairbek Chshiev, and Alan Kalitsov
Phys. Rev. Applied 15, 064003 (2021) - Published 1 June, 2021
Z.R. Yan, Y.Z. Liu, Y. Guang, K. Yue, J.F. Feng, R.K. Lake, G.Q. Yu, and X.F. Han
Phys. Rev. Applied 15, 064004 (2021) - Published 2 June, 2021
The , a bottleneck between storage and processor in the traditional von Neumann computing paradigm, has become increasingly serious with the rise of “Big Data”, and there is strong interest in developing logic-in-memory computing architectures. The authors propose a skyrmion-based programmable logic device with complete Boolean logic functions, a feature that has remained elusive so far. This device can realize robust and programmable logic functions under solely electrical control, in the presence of both the inhomogeneities and thermal fluctuations that are are experimentally unavoidable. This result, then, suggests a path to overcoming the memory wall.
Zhiwen Zong, Zhenhai Sun, Zhangjingzi Dong, Chongxin Run, Liang Xiang, Ze Zhan, Qianlong Wang, Ying Fei, Yaozu Wu, Wenyan Jin, Cong Xiao, Zhilong Jia, Peng Duan, Jianlan Wu, Yi Yin, and Guoping Guo
Phys. Rev. Applied 15, 064005 (2021) - Published 2 June, 2021
M. Packer, P.J. Hobson, N. Holmes, J. Leggett, P. Glover, M.J. Brookes, R. Bowtell, and T.M. Fromhold
Phys. Rev. Applied 15, 064006 (2021) - Published 2 June, 2021
Constantinos Valagiannopoulos
Phys. Rev. Applied 15, 064007 (2021) - Published 3 June, 2021
Alexandros Kyrtsos, John Glennon, Andreu Glasmann, Mark R. O’Masta, Binh-Minh Nguyen, and Enrico Bellotti
Phys. Rev. Applied 15, 064008 (2021) - Published 3 June, 2021
Clemens Göhler, Maria Saladina, Yazhong Wang, Donato Spoltore, Johannes Benduhn, Karl Leo, and Carsten Deibel
Phys. Rev. Applied 15, 064009 (2021) - Published 3 June, 2021
In organic photovoltaics, the energetic characteristics of the charge-transfer state determine the device properties, and are defined by molecular interactions at the donor-acceptor interface. This study uses sensitive spectroscopy to investigate the roles of morphological disorder and molecular dynamics in charge-transfer states, which ultimately affect the open-circuit voltage. The authors model temperature-dependent data and find that dynamic, rather than static, disorder determines the optical properties of the charge-transfer states. Thus, to develop highly efficient organic solar cells, the intramolecular properties of the working materials should receive more attention.
Shahriar Aghaeimeibodi, Daniel Riedel, Alison E. Rugar, Constantin Dory, and Jelena Vučković
Phys. Rev. Applied 15, 064010 (2021) - Published 3 June, 2021
Many applications in quantum information processing require multiple, identical quantum emitters. Among various color centers in diamond, tin-vacancy centers draw attention because of their high quantum efficiency and long spin coherence. The authors study the shifts of optical-transition frequencies of these centers in an applied electric field, and importantly find that both the linear and quadratic coefficients are orders of magnitude smaller than those of non-inversion-symmetric defects such as nitrogen-vacancy centers. This low susceptibility allows the integration of tin-vacancy centers into photonic nanostructures, which is essential for efficient spin-photon interfaces.
Sajjad Taravati and George V. Eleftheriades
Phys. Rev. Applied 15, 064011 (2021) - Published 4 June, 2021
F. Gómez, R.S. Dutra, L.B. Pires, Glauber R. de S. Araújo, B. Pontes, P.A. Maia Neto, H.M. Nussenzveig, and N.B. Viana
Phys. Rev. Applied 15, 064012 (2021) - Published 4 June, 2021
Dengke Zhang and Jaw-Shen Tsai
Phys. Rev. Applied 15, 064013 (2021) - Published 4 June, 2021
Rafael Costa-Amaral and Yoshihiro Gohda
Phys. Rev. Applied 15, 064014 (2021) - Published 7 June, 2021
Y.C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K.K. Vudya Sethu, F. Yasin, D. Crotti, and G.S. Kar
Phys. Rev. Applied 15, 064015 (2021) - Published 7 June, 2021
To address the large energy dissipation of our current computing architecture, nonvolatile voltage-gate-assisted spin-orbit-torque (VGSOT) MRAM combines the advantages of spin-orbit-torque (SOT) and voltage control of magnetic anisotropy (VCMA) systems. Here the authors study VGSOT writing with perpendicular magnetic tunnel junctions, and show it to be reliable, with low error rate and resilience to intensive writing stresses. The spin Hall angle and VCMA coefficient allow 30-nm junctions. A multipillar design is suggested, with high density close to 2-terminal devices and high-speed write/read performance at low operating power, suitable for embedded memory or in-memory computation.
Xing-Yu Zhou, Hua-Jian Ding, Ming-Shuo Sun, Si-Hao Zhang, Jing-Yang Liu, Chun-Hui Zhang, Jian Li, and Qin Wang
Phys. Rev. Applied 15, 064016 (2021) - Published 7 June, 2021
Saba Karimeddiny and Daniel C. Ralph
Phys. Rev. Applied 15, 064017 (2021) - Published 7 June, 2021
Long-Sheng Zeng, Ya-Xi Shen, Yu-Gui Peng, De-Gang Zhao, and Xue-Feng Zhu
Phys. Rev. Applied 15, 064018 (2021) - Published 8 June, 2021
Masaki Kobayashi, Le Duc Anh, Masahiro Suzuki, Shingo Kaneta-Takada, Yukiharu Takeda, Shin-ichi Fujimori, Goro Shibata, Arata Tanaka, Masaaki Tanaka, Shinobu Ohya, and Atsushi Fujimori
Phys. Rev. Applied 15, 064019 (2021) - Published 8 June, 2021
Jiangshan Tang, Lei Tang, Haodong Wu, Yang Wu, Hui Sun, Han Zhang, Tao Li, Yanqing Lu (陆延青), Min Xiao, and Keyu Xia (夏可宇)
Phys. Rev. Applied 15, 064020 (2021) - Published 8 June, 2021
Tarek Mealy, Ahmed F. Abdelshafy, and Filippo Capolino
Phys. Rev. Applied 15, 064021 (2021) - Published 8 June, 2021
John B. S. Abraham, Cameron Gutgsell, Dalibor Todorovski, Scott Sperling, Jacob E. Epstein, Brian S. Tien-Street, Timothy M. Sweeney, Jeremiah J. Wathen, Elizabeth A. Pogue, Peter G. Brereton, Tyrel M. McQueen, Wesley Frey, B. D. Clader, and Robert Osiander
Phys. Rev. Applied 15, 064022 (2021) - Published 9 June, 2021
Ajit Jena, Seung-Cheol Lee, and Satadeep Bhattacharjee
Phys. Rev. Applied 15, 064023 (2021) - Published 9 June, 2021
M.V. Logunov, S.S. Safonov, A.S. Fedorov, A.A. Danilova, N.V. Moiseev, A.R. Safin, S.A. Nikitov, and A. Kirilyuk
Phys. Rev. Applied 15, 064024 (2021) - Published 9 June, 2021
Dan Guo, Chen Qiu, Kaike Yang, and Hui-Xiong Deng
Phys. Rev. Applied 15, 064025 (2021) - Published 10 June, 2021
Guillermo Fernandez Moroni, Kevin Andersson, Ana Botti, Juan Estrada, Dario Rodrigues, and Javier Tiffenberg
Phys. Rev. Applied 15, 064026 (2021) - Published 10 June, 2021
Charged-coupled devices (CCDs) are among the most promising technologies to enable experiments in the direct search for low-mass dark matter, and a new generation of compact neutrino detectors. Understanding the charge-collection efficiency of these detectors is a limiting factor for current and future experiments. The authors present a technique to characterize and measure the efficiency as a function of the charge-generation depth, with submicrometer precision. Using these tools, they furthermore compare the performance of two different back-side treatments and discuss the implications for CCD research and development.
Shigeo Hakkaku and Keisuke Fujii
Phys. Rev. Applied 15, 064027 (2021) - Published 10 June, 2021
Pablo Cova Fariña, Benjamin Merkel, Natalia Herrera Valencia, Penghong Yu, Alexander Ulanowski, and Andreas Reiserer
Phys. Rev. Applied 15, 064028 (2021) - Published 11 June, 2021
I. Takmakov, P. Winkel, F. Foroughi, L. Planat, D. Gusenkova, M. Spiecker, D. Rieger, L. Grünhaupt, A.V. Ustinov, W. Wernsdorfer, I.M. Pop, and N. Roch
Phys. Rev. Applied 15, 064029 (2021) - Published 11 June, 2021
Daria Gusenkova, Martin Spiecker, Richard Gebauer, Madita Willsch, Dennis Willsch, Francesco Valenti, Nick Karcher, Lukas Grünhaupt, Ivan Takmakov, Patrick Winkel, Dennis Rieger, Alexey V. Ustinov, Nicolas Roch, Wolfgang Wernsdorfer, Kristel Michielsen, Oliver Sander, and Ioan M. Pop
Phys. Rev. Applied 15, 064030 (2021) - Published 11 June, 2021
Faruk Krečinić and Ralph Ernstorfer
Phys. Rev. Applied 15, 064031 (2021) - Published 14 June, 2021
Hongqing Dai, Linbo Liu, Baizhan Xia, and Dejie Yu
Phys. Rev. Applied 15, 064032 (2021) - Published 14 June, 2021
Yufu Niu, Ying Da Wang, Peyman Mostaghimi, James E. McClure, Junqi Yin, and Ryan T. Armstrong
Phys. Rev. Applied 15, 064033 (2021) - Published 14 June, 2021
Qian-Ke Wang, Fang-Xiang Wang, Jun Liu, Wei Chen, Zheng-Fu Han, Andrew Forbes, and Jian Wang
Phys. Rev. Applied 15, 064034 (2021) - Published 14 June, 2021
Drew B. Riley, Oskar J. Sandberg, Nora M. Wilson, Wei Li, Stefan Zeiske, Nasim Zarrabi, Paul Meredith, Ronald Österbacka, and Ardalan Armin
Phys. Rev. Applied 15, 064035 (2021) - Published 15 June, 2021
Yi-Feng Zheng, Le Huang, Boyan Li, Rong Wang, and Su-Huai Wei
Phys. Rev. Applied 15, 064036 (2021) - Published 15 June, 2021
Hao Tang, Bowen Shi, Yangyang Wang, Chen Yang, Shiqi Liu, Ying Li, Ruge Quhe, and Jing Lu
Phys. Rev. Applied 15, 064037 (2021) - Published 15 June, 2021
Hao Tan, Wei Li, Likang Zhang, Kejin Wei, and Feihu Xu
Phys. Rev. Applied 15, 064038 (2021) - Published 15 June, 2021
Xiyu Zhao, Feng Liu, Xiao-jun Wang, and Yichun Liu
Phys. Rev. Applied 15, 064039 (2021) - Published 16 June, 2021
V.G. Ibarra-Sierra, J.C. Sandoval-Santana, R.S. Joshya, H. Carrère, L.A. Bakaleinikov, V. K. Kalevich, E.L. Ivchenko, X. Marie, T. Amand, A. Balocchi, and A. Kunold
Phys. Rev. Applied 15, 064040 (2021) - Published 16 June, 2021
Jamil Missaoui, Antonio Cammarata, Florian Belviso, and Tomas Polcar
Phys. Rev. Applied 15, 064041 (2021) - Published 16 June, 2021
Xing Chen, Chunfeng He, Weiguo Wang, Tian Bai, Gaofei Xue, and Meidan Ye
Phys. Rev. Applied 15, 064042 (2021) - Published 16 June, 2021
Henry T. Aller, Jonathan A. Malen, and Alan J.H. McGaughey
Phys. Rev. Applied 15, 064043 (2021) - Published 17 June, 2021
Overheating in electronic devices is difficult to mitigate, because thermal transport across the internal interfaces is poorly understood. This study uses atomistic simulations and analytical theory to create a model that predicts how the thermal boundary conductance of a metal cap–metal contact–dielectric junction varies with contact thickness. The model contains no fitting parameters and is validated against more than 100 experimental measurements, revealing the important role played by electron-phonon coupling. Physically motivated approximations reduce the model to a simple thermal circuit that retains high predictive power, for streamlining the design of thermally efficient contacts.
Qiang Feng, Yifeng Lin, Mingming Shan, Yajie Mu, and Long Li
Phys. Rev. Applied 15, 064044 (2021) - Published 17 June, 2021
Doan Nguyen Ba, Yunlin Zheng, Loic Becerra, Massimiliano Marangolo, Morgan Almanza, and Martino LoBue
Phys. Rev. Applied 15, 064045 (2021) - Published 17 June, 2021
Orchi Hassan, Supriyo Datta, and Kerem Y. Camsari
Phys. Rev. Applied 15, 064046 (2021) - Published 17 June, 2021
Nicolas Vitrant, Sébastien Garcia, Kilian Müller, and Alexei Ourjoumtsev
Phys. Rev. Applied 15, 064047 (2021) - Published 17 June, 2021
Sneha Banerjee, John Luginsland, and Peng Zhang
Phys. Rev. Applied 15, 064048 (2021) - Published 21 June, 2021
Anton Sofronov, Boris Afinogenov, Anton Medvedev, Aleksandr Shorokhov, Maksim Riabko, and Stanislav Polonsky
Phys. Rev. Applied 15, 064049 (2021) - Published 21 June, 2021
Matthias Mergenthaler, Ani Nersisyan, Andrew Patterson, Martina Esposito, Andreas Baumgartner, Christian Schönenberger, G. Andrew D. Briggs, Edward A. Laird, and Peter J. Leek
Phys. Rev. Applied 15, 064050 (2021) - Published 21 June, 2021
Lu Wang and Wentao Yan
Phys. Rev. Applied 15, 064051 (2021) - Published 21 June, 2021
Börge Göbel and Ingrid Mertig
Phys. Rev. Applied 15, 064052 (2021) - Published 22 June, 2021
A. Mogulkoc, M. Modarresi, and A.N. Rudenko
Phys. Rev. Applied 15, 064053 (2021) - Published 22 June, 2021
Andre R. R. Carvalho, Harrison Ball, Michael J. Biercuk, Michael R. Hush, and Felix Thomsen
Phys. Rev. Applied 15, 064054 (2021) - Published 22 June, 2021
R. Pachat, D. Ourdani, J.W. van der Jagt, M.-A. Syskaki, A. Di Pietro, Y. Roussigné, S. Ono, M.S. Gabor, M. Chérif, G. Durin, J. Langer, M. Belmeguenai, D. Ravelosona, and L. Herrera Diez
Phys. Rev. Applied 15, 064055 (2021) - Published 22 June, 2021
An-Yang Guan, Zhang-Zhao Yang, Xin-Ye Zou, and Jian-Chun Cheng
Phys. Rev. Applied 15, 064056 (2021) - Published 23 June, 2021
Vicente Cutanda Henríquez and José Sánchez-Dehesa
Phys. Rev. Applied 15, 064057 (2021) - Published 23 June, 2021
Sashini Senali Dissanayake, Naheed Ferdous, Hemi H. Gandhi, David Pastor, Tuan T. Tran, Jim S. Williams, Michael J. Aziz, Eric Mazur, Elif Ertekin, and Meng-Ju Sher
Phys. Rev. Applied 15, 064058 (2021) - Published 23 June, 2021
Guang-Tai Xue, Yun-Fei Niu, Xiaoyue Liu, Jia-Chen Duan, Wenjun Chen, Ying Pan, Kunpeng Jia, Xiaohan Wang, Hua-Ying Liu, Yong Zhang, Ping Xu, Gang Zhao, Xinlun Cai, Yan-Xiao Gong, Xiaopeng Hu, Zhenda Xie, and Shining Zhu
Phys. Rev. Applied 15, 064059 (2021) - Published 24 June, 2021
Stuart Watt, Mikhail Kostylev, Alexey B. Ustinov, and Boris A. Kalinikos
Phys. Rev. Applied 15, 064060 (2021) - Published 24 June, 2021
Eric J. Marksz, Aaron M. Hagerstrom, Xiaohang Zhang, Naila Al Hasan, Justin Pearson, Jasper A. Drisko, James C. Booth, Christian J. Long, Ichiro Takeuchi, and Nathan D. Orloff
Phys. Rev. Applied 15, 064061 (2021) - Published 24 June, 2021
Nathália Talita C. Oliveira, Aline M. Vieira, Cid B. de Araújo, Weliton S. Martins, Rafael A. de Oliveira, and Albert S. Reyna
Phys. Rev. Applied 15, 064062 (2021) - Published 24 June, 2021
Eyob A. Sete, Angela Q. Chen, Riccardo Manenti, Shobhan Kulshreshtha, and Stefano Poletto
Phys. Rev. Applied 15, 064063 (2021) - Published 25 June, 2021
Gaokun Yu, Yanping Qiu, Yong Li, Xinlong Wang, and Ning Wang
Phys. Rev. Applied 15, 064064 (2021) - Published 25 June, 2021
Yongjin Sung
Phys. Rev. Applied 15, 064065 (2021) - Published 25 June, 2021
Artem E. Shitikov, Valery E. Lobanov, Nikita M. Kondratiev, Andrey S. Voloshin, Evgeny A. Lonshakov, and Igor A. Bilenko
Phys. Rev. Applied 15, 064066 (2021) - Published 25 June, 2021
Massimo Moccia, Giuseppe Castaldi, Francesco Monticone, and Vincenzo Galdi
Phys. Rev. Applied 15, 064067 (2021) - Published 28 June, 2021
Kamyar Parto, Arnab Pal, Tanmay Chavan, Kunjesh Agashiwala, Chao-Hui Yeh, Wei Cao, and Kaustav Banerjee
Phys. Rev. Applied 15, 064068 (2021) - Published 28 June, 2021
Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. Employing an framework, the authors find that edge contacts to monolayer MoS are pinned to a charge-neutrality level close to the valence band and are -type—unlike typical -type top contacts. This anisotropy in Fermi-level pinning complicates conduction through metal-TMD interfaces and affects design guidelines for low-resistance contacts. Challenges, potential mitigating solutions, and opportunities that leverage this anisotropy are discussed.
Kaushik Sampath, Caleb F. Sieck, Matthew D. Guild, Alec K. Ikei, and Charles A. Rohde
Phys. Rev. Applied 15, 064069 (2021) - Published 28 June, 2021
Jolanda S. Müller, Andrea Morandi, Rachel Grange, and Romolo Savo
Phys. Rev. Applied 15, 064070 (2021) - Published 29 June, 2021
P. Abratenko et al.
Phys. Rev. Applied 15, 064071 (2021) - Published 29 June, 2021
M.V. Petrenko, A.S. Pazgalev, and A.K. Vershovskii
Phys. Rev. Applied 15, 064072 (2021) - Published 29 June, 2021
Annika Ott, Yang Hu, Xiao-Hu Wu, and Svend-Age Biehs
Phys. Rev. Applied 15, 064073 (2021) - Published 29 June, 2021
Xuexin Xu and M.H. Ansari
Phys. Rev. Applied 15, 064074 (2021) - Published 29 June, 2021
Chen Zhang, Farida Shagieva, Matthias Widmann, Michael Kübler, Vadim Vorobyov, Polina Kapitanova, Elizaveta Nenasheva, Ruth Corkill, Oliver Rhrle, Kazuo Nakamura, Hitoshi Sumiya, Shinobu Onoda, Junichi Isoya, and Jörg Wrachtrup
Phys. Rev. Applied 15, 064075 (2021) - Published 30 June, 2021
Siti Chalimah, Yuanzhao Yao, Naoki Ikeda, Kei Kaneko, Rei Hashimoto, Tsutomu Kakuno, Shinji Saito, Takashi Kuroda, Yoshimasa Sugimoto, and Kazuaki Sakoda
Phys. Rev. Applied 15, 064076 (2021) - Published 30 June, 2021
Andreas Frutiger, Yves Blickenstorfer, Silvio Bischof, Csaba Forró, Volker Gatterdam, János Vörös, Matthias Lauer, and Christof Fattinger
Phys. Rev. Applied 15, 069901 (2021) - Published 30 June, 2021
