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Impact of Heterostructure Design on Transport Properties in the Second Landau Level of In Situ Back-Gated Two-Dimensional Electron Gases

J. D. Watson1,2,*, G. A. Csáthy1, and M. J. Manfra1,2,3,4,†

  • 1Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
  • 2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  • 3School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  • 4School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA

  • *Present address: Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands.
  • †mmanfra@purdue.edu
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Phys. Rev. Applied 3, 064004 – Published 8 June, 2015

DOI: https://doi.org/10.1103/PhysRevApplied.3.064004

Abstract

We report on transport in the second Landau level in in situ back-gated two-dimensional electron gases in GaAs/AlxGa1−xAs quantum wells. Minimization of gate leakage is the primary heterostructure design consideration. Leakage currents resulting in dissipation as small as ∼10  pW can cause noticeable heating of the electrons at 10 mK, limiting the formation of novel correlated states. We show that when the heterostructure design is properly optimized, gate voltages as large as 4 V can be applied with negligible gate leakage, allowing the density to be tuned over a large range from depletion to over 4×1011  cm−2. As a result, the strength of the ν=5/2 state can be continuously tuned from onset at n∼1.2×1011  cm−2 to a maximum Δ5/2=625  mK at n=3.35×1011  cm−2. An unusual evolution of the reentrant-integer quantum Hall states as a function of density is also reported. These devices can be expected to be useful in experiments aimed at proving the existence of non-Abelian phases useful for topological quantum computation.

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Phys. Rev. Applied 3, 064004– Published 8 June, 2015
  • Received 13 February 2015
Article part of CHORUS

© 2015 American Physical Society

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