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Variable and Orbital-Dependent Spin-Orbit Field Orientations in an InSb Double Quantum Dot Characterized via Dispersive Gate Sensing

Lin Han1,*, Michael Chan1, Damaz de Jong1, Christian Prosko1, Ghada Badawy2, Sasa Gazibegovic2, Erik P.A.M. Bakkers2, Leo P. Kouwenhoven1, Filip K. Malinowski1,† et al.

Wolfgang Pfaff3

  • 1QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft 2600 GA, Netherlands
  • 2Department of Applied Physics, Eindhoven University of Technology, MB Eindhoven 5600, Netherlands
  • 3Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

  • *L.Han-2@tudelft.nl
  • †F.K.Malinowski@tudelft.nl
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Phys. Rev. Applied 19, 014063 – Published 24 January, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.014063

Abstract

Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.

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Phys. Rev. Applied 19, 014063– Published 24 January, 2023
  • Received 1 April 2022
  • Revised 26 October 2022
  • Accepted 13 December 2022
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