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Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators

Sabyasachi Tiwari1,2,3, Maarten L. Van de Put1,3, Kristiaan Temst4, William G. Vandenberghe1,*, and Bart Sorée3,5,6,†

  • 1Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080, USA
  • 2Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, Leuven 3001, Belgium
  • 3Imec, Kapeldreef 75, Heverlee 3001, Belgium
  • 4Quantum Solid State Physics, Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200 D, Leuven B-3001, Belgium
  • 5Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, Leuven 3001, Belgium
  • 6Department of Physics, University of Antwerp, Groenenborgerlaan 171, Antwerp 2020, Belgium

  • *william.vandenberghe@utdallas.edu
  • †bart.soree@imec.be
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Phys. Rev. Applied 19, 014040 – Published 12 January, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.014040

Abstract

To design fast memory devices, we need material combinations that can facilitate fast read and write operations. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option for designing fast memory devices. We theoretically model the spin-charge dynamics between 2D magnets and 2D TIs. Using the adiabatic approximation, we combine the nonequilibrium Green’s function method for spin-dependent electron transport and a time-quantified Monte Carlo method for simulating magnetization dynamics. We show that it is possible to switch a magnetic domain of a ferromagnet using the spin torque from spin-polarized edge states of a 2D TI. We show further that the switching of 2D magnets by TIs is strongly dependent on the interface exchange (Jint), and an optimal interface exchange, is required for efficient switching. Finally, we compare experimentally grown Cr compounds and show that Cr compounds with higher anisotropy (such as CrI3) result in a lower switching speed but a more stable magnetic order.

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Phys. Rev. Applied 19, 014040– Published 12 January, 2023
  • Received 1 April 2022
  • Revised 10 October 2022
  • Accepted 21 November 2022
Article part of CHORUS
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