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Polariton-Based Quantum Memristors

Ariel Norambuena1,*, Felipe Torres2,3,4, Massimiliano Di Ventra4, and Raúl Coto1

  • 1Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor 7560908, Chile
  • 2Center for the Development of Nanoscience and Nanotechnology, Estación Central, Santiago 9170124, Chile
  • 3Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024, Chile
  • 4Department of Physics, University of California, San Diego, La Jolla, California 92093, USA

  • *ariel.norambuena@umayor.cl

Phys. Rev. Applied 17, 024056 – Published 22 February, 2022

DOI: https://doi.org/10.1103/PhysRevApplied.17.024056

Abstract

Information processing and storage by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units the memory content of which can be easily tuned and controlled. Here, we introduce a polariton-based quantum memristor where the memristive nature arises from the intercavity polariton exchange and is controlled by a time-varying atom-cavity detuning. A dynamical hysteresis is characterized by the fluctuations in the instantaneous polariton number, where the history information is encoded into a dynamical phase. Using a Lindblad master-equation approach, we find that features of the quantum memristor dynamics, such as the area and circulation of the hysteresis loop, showcase a kind of “plasticity” controlled by quantum state initialization. This makes this quantum memristor very versatile for a wide range of applications.

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