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Probing Proximity-Induced Superconductivity in InAs Nanowires Using Built-In Barriers

Tosson Elalaily1,2, Olivér Kürtössy1, Valentina Zannier3, Zoltán Scherübl1, István Endre Lukács4, Pawan Srivastava1, Francesca Rossi5, Lucia Sorba3, Szabolcs Csonka1,* et al.

Péter Makk1,†

  • 1Department of Physics, Budapest University of Technology and Economics and Nanoelectronics ‘Momentum’ Research Group of the Hungarian Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
  • 2Department of Physics, Faculty of Science, Tanta University, Al-Geish St., 31527 Tanta, Gharbia, Egypt
  • 3NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
  • 4Center for Energy Research, Institute of Technical Physics and Material Science, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
  • 5IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy

  • *szabolcs.csonka@mono.eik.bme.hu
  • peter.makk@mail.bme.hu

Phys. Rev. Applied 14, 044002 – Published 1 October, 2020

DOI: https://doi.org/10.1103/PhysRevApplied.14.044002

Abstract

Bound states in superconductor-nanowire hybrid devices play a central role, carrying information on ground-state properties (Shiba or Andreev states) or on the topological properties of the system (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers. Here we used thin InP segments embedded into InAs nanowire during the growth process to form a sharp built-in tunnel barrier. Gate dependence and thermal-activation measurements are used to confirm the presence and estimate the height of this barrier. By coupling these wires to superconducting electrodes we investigate the gate-voltage dependence of the induced gap in the nanowire segment, which we can understand using a simple model based on Andreev bound states. Our results show that these built-in barriers are promising as future spectroscopic tools.

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