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Articles Citing

The single-electron transistor

Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Full Counting Statistics and First-Passage Times in Quantum Markovian Processes: Ensemble Relations, Metastability, and Fluctuation Theorems

Paul Menczel, Christian Flindt, Fredrik Brange, Franco Nori, and Clemens Gneiting

PRX Quantum 7 010304 (2026)

Supersymmetric factorization of two electrons confined in a 2D quantum dot under a generalized Cornell potential

Joël Ademonla Oke and Finagnon Anselme Dossa

Physics Letters A 589 131784 (2026)

Probing Dopant‐Induced Quantum Dots in High‐Concentration Codoped Silicon‐On‐Insulator Thin‐Film Transistors

Taruna Teja Jupalli, Daris Alfafa, Marius Dobromir, and Daniel Moraru

Physica Status Solidi (a) 223 e202500829 (2026)

Real-Space Dynamic Electron Correlation in Beryllium

Rudra B. Bista, Yuya Shinohara, Wojciech Dmowski, Chae Woo Ryu, Jung Ho Kim, Mary Upton, Hlynur Gretarsson, Martin Sundermann, and Takeshi Egami

Phys. Rev. Lett. 136 256402 (2026)

Tunneling in multisite mesoscopic quantum Hall circuits

D. B. Karki

Phys. Rev. B 113 155411 (2026)

Nonreciprocal phonon blockade in spin quadratic optomechanical systems

Yao Dong and Guo-Feng Zhang

Phys. Rev. A 114 013701 (2026)

Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective

Lei Tang and Peidong Yang

Nano Lett. 26 4913 (2026)

Electric-Field Control of Magnetization and Entropy Via Spin–Orbit Coupling in Quantum Dots

Maurice Tiotsop

Int J Theor Phys 65 149 (2026)

Time-dependent field-induced transport in a T-shaped triple quantum dot system

H. L. Guo, Q. Li, D. Ran, K. F. Chen, and Z. L. He

Indian J Phys (2026)

Transport in Single Quantum Dots: A Review from Linear Response to Nonlinear Regimes

Gustavo Diniz, Silvio Quintino, and Vivian V. França

Braz J Phys 56 27 (2026)

Defect-Induced Single-Photon Emission in ZnPS3

Natalia Zawadzka, Dmitrii Litvinov, Stan Kwast, Denis Baranov, Malte Rösner, Maciej R. Molas, Maciej Koperski, and Magdalena Grzeszczyk

ACS Nano 20 17962 (2026)

No title available

Manvir S. Kushwaha

Strong-coupling quantum dot microscope

Eric Goodwin, Elinore McLain, Kaedon Cleland-Host, Genda Gu, and Stuart Tessmer

Review of Scientific Instruments 96 103701 (2025)

Informational analysis of the confinement of an electron in an asymmetric double quantum dot

W.S. Nascimento, A.M. Maniero, F.V. Prudente, C.R. de Carvalho, and Ginette Jalbert

Physica B: Condensed Matter 699 416769 (2025)

Bromobenzene Based Single Electron Transistor Sensor for Toxic Gases Detection: A Computational Insight

Kumar Gaurav and Anurag Srivastava

Phys. Solid State 67 745 (2025)

Variational scarring in open two-dimensional quantum dots

Fartash Chalangari, Joonas Keski-Rahkonen, Simo Selinummi, and Esa Räsänen

Phys. Rev. B 112 115137 (2025)

Multimode Coulomb blockade oscillations

D. B. Karki

Phys. Rev. B 111 035426 (2025)

Quantum-dot-based device for high-performance magnetic microscopy and spin filtering in the Kondo regime

Pierre Lombardo, Imam Makhfudz, Steffen Schäfer, and Roland Hayn

Phys. Rev. Applied 24 054039 (2025)

Single electron transistor based charge sensors: fabrication challenges and opportunities

Jency Rubia J, Julaiba Tahsina Mazumder, Arun B. Aloshious, and Ravindra Kumar Jha

Nanoscale 17 11960 (2025)

Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Alexander Rothstein, Ammon Fischer, Anthony Achtermann, Eike Icking, Katrin Hecker, Luca Banszerus, Martin Otto, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Robin J. Dolleman, Dante M. Kennes, and Christoph Stampfer

Nano Lett. 25 6429 (2025)

Single photon sources and single electron transistors in two-dimensional materials

D. Litvinov, A. Wu, M. Barbosa, K. Vaklinova, M. Grzeszczyk, G. Baldi, M. Zhu, and M. Koperski

Materials Science and Engineering: R: Reports 163 100928 (2025)

Magnetizing weak links by time-dependent spin-orbit interactions: Momentum conserving and non-conserving processes

Debashree Chowdhury, O. Entin-Wohlman, A. Aharony, R. I. Shekhter, and M. Jonson

Low Temperature Physics 51 1439 (2025)

A Unified Compact Model for Full-CMOS-Based Hybrid SET–FET Circuits

Sujit Kumar Singh, Deepesh Sharma, and Abhisek Dixit

IEEE Trans. Electron Devices 72 507 (2025)

Gel-Based Ionic Circuits

Hyunjae Yoo, Yun Hyeok Lee, Min-Gyu Lee, and Jeong-Yun Sun

Chem. Rev. 125 8956 (2025)

Informational Entropy Analysis of Artificial Helium Atoms

Marcilio N. Guimarães, Rafael N. Cordeiro, Wallas S. Nascimento, and Frederico V. Prudente

Atoms 13 42 (2025)

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