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Colloquium: Quantum anomalous Hall effect

Cui-Zu Chang*, Chao-Xing Liu†, and Allan H. MacDonald‡

Cui-Zu Chang* and Chao-Xing Liu†

  • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Allan H. MacDonald‡

  • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • *cxc955@psu.edu
  • †cxl56@psu.edu
  • ‡macd@physics.utexas.edu
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Rev. Mod. Phys. 95, 011002 – Published 23 January, 2023

DOI: https://doi.org/10.1103/RevModPhys.95.011002

Abstract

The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2Te3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.

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Rev. Mod. Phys. 95, 011002– Published 23 January, 2023
  • Received 27 February 2022
Article part of CHORUS
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