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Electrostatic modification of novel materials

C. H. Ahn, A. Bhattacharya, M. Di Ventra, J. N. Eckstein, C. Daniel Frisbie, M. E. Gershenson, A. M. Goldman, I. H. Inoue, J. Mannhart et al.

C. H. Ahn

  • Department of Applied Physics,Yale University, New Haven, Connecticut 06520–8120, USA

A. Bhattacharya

  • Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, USA

M. Di Ventra

  • Department of Physics, University of California San Diego, La Jolla, California 92093, USA

J. N. Eckstein

  • Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

C. Daniel Frisbie

  • Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

M. E. Gershenson

  • Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA

A. M. Goldman

  • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

I. H. Inoue

  • Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central, Tsukuba, Japan

J. Mannhart

  • Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, D-86135 Augsburg, Germany

Andrew J. Millis

  • Department of Physics, Columbia University, New York, New York 10027, USA

Alberto F. Morpurgo

  • Kavli Institute of Nanoscience, Delft University, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Douglas Natelson

  • Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

Jean-Marc Triscone

  • Ecole de Physique, Département de Physiques de la Matière Condensée, 24 quai Ernest-Ansermet, 1211 Genève 4, Switzerland

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Rev. Mod. Phys. 78, 1185 – Published 10 November, 2006

DOI: https://doi.org/10.1103/RevModPhys.78.1185

Abstract

Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of the carrier concentration without modifying the level of disorder, as occurs when chemical composition is altered. As well as providing a basis for new devices, electrostatic doping can in principle serve as a tool for studying quantum critical behavior, by permitting the ground state of a system to be tuned in a controlled fashion. In this paper progress in electrostatic doping of a number of materials systems is reviewed. These include structures containing complex oxides, such as cuprate superconductors and colossal magnetoresistive compounds, organic semiconductors, in the form of both single crystals and thin films, inorganic layered compounds, single molecules, and magnetic semiconductors. Recent progress in the field is discussed, including enabling experiments and technologies, open scientific issues and challenges, and future research opportunities. For many of the materials considered, some of the results can be anticipated by combining knowledge of macroscopic or bulk properties and the understanding of the field-effect configuration developed during the course of the evolution of conventional microelectronics. However, because electrostatic doping is an interfacial phenomenon, which is largely an unexplored field, real progress will depend on the development of a better understanding of lattice distortion and charge transfer at interfaces in these systems.

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References (211)

  1. Ahn, C. H., S. Gariglio, P. Paruch, T. Tybell, L. Antognazza, and J.-M. Triscone, 1999, Science 284, 1152.
  2. Ahn, C. H., J.-M. Triscone, and J. Mannhart, 2003, Nature (London) 424, 1015.
  3. Ahn, C. H., T. Tybell, L. Antognazza, K. Char, R. H. Hammond, M. R. Beasley, Ø. Fischer, and J. M. Triscone, 1997, Science 276, 1100.
  4. Aji, V., J. E. Moore, and C. M. Varma, 2003, e-print cond-mat/0302222.
  5. Albrecht, T., A. Guckian, J. Ulstrup, and J. G. Vos, 2005, Nano Lett. 5, 1451.
  6. Altieri, S., et al., 2002, Phys. Rev. B 66, 155432.
  7. Avishai, Y., A. Golub, and A. D. Zaikin, 2003, Phys. Rev. B 67, 041301(R).
  8. Baer, R., and D. Neuhauser, 2003, Int. J. Quantum Chem. 1, 524.
  9. Bednorz, J. G., and K. A. Müller, 1986, Z. Phys. B: Condens. Matter 64, 189.
  10. Berger, C., et al., 2004, e-print cond-mat/041240.
  11. Bhattacharya, A., et al., 2004, Appl. Phys. Lett. 85, 997.
  12. Bhattacharya, A., et al., 2005, Phys. Rev. B 72, 132406.
  13. Boukari, H., et al., 2002, Phys. Rev. Lett. 88, 207204.
  14. Bozovic, I., G. Logvenov, M. Verhoeven, P. Caputo, E. Goldobin, and M. R. Beasley, 2004, Phys. Rev. Lett. 93, 157002.
  15. Braig, S., and K. Flensberg, 2003, Phys. Rev. B 68, 205324.
  16. Bucher, E., 1992, in Photoelectrochemistry and Photovoltaics of Layered Semiconductors, edited by A. Aruchamy (Kluwer, Dordrecht), p. 1.
  17. Buitelaar, M. R., T. Nussbaumer, and C. Schonenberger, 2002, Phys. Rev. Lett. 89, 256801.
  18. Bulka, B. R., and S. Lipinski, 2003, Phys. Rev. B 67, 024404.
  19. Bulovic, V., P. E. Burrows, and S. R. Forrest, 2000, Semicond. Semimetals 64, 255.
  20. Bunch, J. S., et al., 2005, Nano Lett. 5, 287.
  21. Bürgi, L., T. J. Richards, R. H. Friend, and H. Sirringhaus, 2003, J. Appl. Phys. 94, 6129.
  22. Bürgi, L., H. Sirringhaus, and R. H. Friend, 2002, Appl. Phys. Lett. 80, 2913.
  23. Burke, K, R. Car, and R. Gebauer, 2005, Phys. Rev. Lett. 94, 146803.
  24. Butko, V. V., X. Chi, D. V. Lang, and A. P. Ramirez, 2003, Appl. Phys. Lett. 83, 4773.
  25. Buttiker, M., 2000, J. Low Temp. Phys. 118, 519.
  26. Cassinese, A., et al., 2004, Appl. Phys. Lett. 84, 3933.
  27. Chae, D.-H., J. F. Berry, S. Jung, F. A. Cotton, C. A. Murillo, and Z. Yao, 2006, Nano Lett. 6, 165.
  28. Champagne, A. R., A. N. Pasupathy, and D. C. Ralph, 2005, Nano Lett. 5, 305.
  29. Chen, F., et al., 2004, Nano Lett. 5, 503.
  30. Chen, J., et al., 1999, Science 286, 1550.
  31. Chen, Y. C., M. Zwolak, and M. Di Ventra, 2003, Nano Lett. 3, 1691.
  32. Chen, Y. C., M. Zwolak, and M. Di Ventra, 2004, Nano Lett. 4, 1709.
  33. Chen, Y. C., M. Zwolak, and M. Di Ventra, 2005, Nano Lett. 5, 621.
  34. Chiba, D., M. Yamanouchi, F. Matsukura, and H. Ohno, 2003, Science 301, 943.
  35. Chu, C. W., 2002, Phys. Scr., T T102, 40.
  36. Collier, C. P., et al., 1999, Science 285, 391.
  37. Collier, C. P., et al., 2000, Science 289, 1172.
  38. Cornaglia, P. S., H. Ness, and D. R. Grempel, 2004, Phys. Rev. Lett. 93, 147201.
  39. Cronenwett, S. M., T. H. Oosterkamp, and L. P. Kouwenhoven, 1998, Nature (London) 281, 540.
  40. Cui, X. D., et al., 2001, Science 294, 571.
  41. Datta, S., et al., 1997, Phys. Rev. Lett. 79, 2530.
  42. de Boer, R. W. I., A. F. Morpurgo, and T. M. Klapwijk, 2003, Appl. Phys. Lett. 83, 4345.
  43. Dietl, T., et al., 2000, Science 287, 1019.
  44. Dimitrakopoulos, C. D., and D. J. Mascaro, 2001, IBM J. Res. Dev. 45, 11.
  45. Di Ventra, M., and N. D. Lang, 2002, Phys. Rev. B 65, 045402.
  46. Di Ventra, M., S. T. Pantelides, and N. D. Lang, 2000a, Appl. Phys. Lett. 76, 3448.
  47. Di Ventra, M., S. T. Pantelides, and N. D. Lang, 2000b, Phys. Rev. Lett. 84, 979.
  48. Di Ventra, M., and T. N. Todorov, 2004, J. Phys.: Condens. Matter 16, 8025.
  49. Donhauser, Z. J., et al., 2001, Science 292, 2303.
  50. Dresselhaus, M. S., G. Dresselhaus, and Ph. Avouris, 2000, Eds., Carbon Nanotubes: Synthesis, Structure, Properties, and Applications (Springer-Verlag, Berlin).
  51. Duffy, D. M., and A. M. Stoneham, 1983, J. Phys. C 16, 4087.
  52. Eblen-Zayas, M., et al., 2005, Phys. Rev. Lett. 94, 037204.
  53. Flensberg, K., 2003, Phys. Rev. B 68, 205323.
  54. Forest, S. R., 2004, Nature (London) 428, 911.
  55. Furukawa, N., and M. Imada, 1992, J. Phys. Soc. Jpn. 61, 3331.
  56. Galperin, M., M. A. Ratner, and A. Nitzan, 2005, J. Chem. Phys. 121, 11965.
  57. Gariglio, S., C. H. Ahn, D. Matthey, and J. M. Triscone, 2002, Phys. Rev. Lett. 88, 067002.
  58. Glazman, L. I., 2000, Low Temp. Phys. 118, 247.
  59. Goldhaber-Gordon, D., et al., 1998, Nature (London) 391, 156.
  60. Grabert, H., and M. H. Devoret, 1992, Eds., Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures, Proceedings of a NATO Advanced Study Institute (Plenum, New York).
  61. Hamadani, B. H., and D. Natelson, 2004, Appl. Phys. Lett. 84, 443.
  62. Hasegawa, T., K. Mattenberger, J. Takeya, and B. Batlogg, 2004, Phys. Rev. B 69, 245115.
  63. Heersche, H. B., Z. de Groot, J. A. Folk, L. P. Kouwenhoven, H. S. J. van der Zant, A. A. Houck, J. Labaziewicz, and I. L. Chuang, 2006, Phys. Rev. Lett. 96, 017205.
  64. Hong, X., A. Posadas, and C. H. Ahn, 2005, Appl. Phys. Lett. 86, 142501.
  65. Hong, X., A. Posadas, A. Lin, and C. H. Ahn, 2003, Phys. Rev. B 68, 134415.
  66. Horowitz, G., 1998, Adv. Mater. (Weinheim, Ger.) 10, 365.
  67. Houck, A. A., J. Labaziewicz, E. K. Chan, J. A. Folk, and I. L. Chuang, 2005, Nano Lett. 5, 1685.
  68. IBM, 2001, IBM J. Res. Dev. 45, 3, available at http://www.research.ibm.com/journal/rd45-1.html
  69. Imada, M., A. Fujimori, and Y. Tokura, 1998, Rev. Mod. Phys. 70, 1039; for additional reviews and perspectives see the special issue of Science, 2000, Science 482, 460.
  70. Inoue, I. H., 2005, Semicond. Sci. Technol. 20, S112.
  71. Inoue, I. H., et al., 2004, preprint, available as part of the 2003 Annual Report of the Correlated Electron Research Center at http://staff.aist.go.ip/i.inoue/papers/mine/CERC2004E.pdf
  72. Izumi, M., et al., 2001, Mater. Sci. Eng., B 84, 53.
  73. Jerome, D., and L. G. Caron, 1987, Low-Dimensional Conductors and Superconductors, NATO Advanced Study Institute, Series B (Plenum, New York).
  74. Joachim, C., et al., 1995, Phys. Rev. Lett. 74, 2102.
  75. Karl, N., and J. Marktanner, 1998, Mol. Cryst. Liq. Cryst. Sci. (Switzerland) 314-315, 465.
  76. Karl, N., et al., 1999, J. Vac. Sci. Technol. A 17, 2318.
  77. Katz, H. E., and Z. Bao, 2000, J. Phys. Chem. B 104, 671.
  78. Kerting, V., et al., 2005, Phys. Rev. B 71, 104510.
  79. Kirchner, S., L. J. Zhu, Q. M. Si, and D. Natelson, 2005, Proc. Natl. Acad. Sci. U.S.A. 102, 18824.
  80. Kohler, S., J. Lehmann, and P. Hanggi, 2005, Phys. Rep. 6, 381.
  81. Kohn, W., and L. J. Sham, 1965, Phys. Rev. 140, A1133.
  82. Kondo, J., 1964, Prog. Theor. Phys. 32, 37.
  83. Kubatkin, S., et al., 2003, Nature (London) 425, 698.
  84. Kushmerick, J. G., J. Lazorick, C. H. Patterson, and R. Sashidar, 2004, Nano Lett. 4, 639.
  85. Kushmerick, J. G., et al., 2002, Phys. Rev. Lett. 89, 086802.
  86. Lang, D. V., et al., 2004a, Phys. Rev. Lett. 93, 076601.
  87. Lang, D. V., et al., 2004b, Phys. Rev. Lett. 93, 086802.
  88. Lang, N. D., 1995, Phys. Rev. B 52, 5335.
  89. Lang, N. D., and P. Avouris, 2002, Nano Lett. 2, 1047.
  90. Lang, N. D., and P. M. Solomon, 2005, Nano Lett. 5, 921.
  91. Lauhon, L. J., and W. Ho, 1999, Phys. Rev. B 60, R8525.
  92. Leitner, Aronld, Charles T. Rogers, John C. Price, David A. Rudman, and David R. Herman, 1998, Appl. Phys. Lett. 72, 3065.
  93. Liang, W., et al., 2002, Nature (London) 417, 725.
  94. Liebsch, A., 2003, Phys. Rev. Lett. 90, 096401.
  95. Lieth, R. M. A., 1977, Ed., Preparation and Crystal Growth of Materials with Layered Structures (Reidel, Dordrecht).
  96. Lopez, R., and D. Sanchez, 2003, Phys. Rev. Lett. 90, 116602.
  97. Lorente, N., M. Persson, L. J. Lauhon, and W. Ho, 2001, Phys. Rev. Lett. 86, 2593.
  98. Lussier, A., et al., 2002, J. Vac. Sci. Technol. B 20, 1609.
  99. Maiti, K., P. Mahadevan, and D. D. Sarma, 1998, Phys. Rev. Lett. 80, 2885.
  100. Mannhart, J., 1996, Supercond. Sci. Technol. 9, 49.
  101. Mannhart, J., J. G. Bednorz, K. A. Muller, and D. G. Schlom, 1991, Z. Phys. B: Condens. Matter 83, 307.
  102. Martinek, J., Y. Utsumi, H. Imamura, J. Barnas, S. Maekawa, J. Konig, and G. Schon, 2003, Phys. Rev. Lett. 91, 127203.
  103. Mathur, N., and P. Littlewood, 2003, Phys. Today 56 (1), 25.
  104. Matijasevic, V. C., et al., 1994, Physica C 235-240, 2097.
  105. Matthey, D., S. Gariglio, and J.-M. Triscone, 2003, Appl. Phys. Lett. 83, 3758.
  106. Meijer, E. J., et al., 2003, Appl. Phys. Lett. 82, 4576.
  107. Millis, A. J., 2003, Solid State Commun. 126, 3.
  108. Mitra, A., I. Aleiner, and A. J. Millis, 2004, Phys. Rev. B 69, 245302.
  109. Mitzi, D. B., K. Chondrous, and C. R. Kagan, 2001, IBM J. Res. Dev. 45, 29.
  110. Mitzi, D. B., et al., 2004, Nature (London) 428, 299.
  111. Moeller, G., Q. Si, G. Kotliar, M. Rozenberg, and D. S. Fisher, 1995, Phys. Rev. Lett. 74, 2082.
  112. Montgomery, M. J., and T. N. Todorov, 2003, J. Phys.: Condens. Matter 15, 8781.
  113. Montgomery, M. J., T. N. Todorov, and A. P. Sutton, 2002, J. Phys.: Condens. Matter 14, 5377.
  114. Nazmul, Ahsan M., S. Kobayashi, S. Sugahara, and M. Tanaka, 2004, Jpn. J. Appl. Phys., Part 2 43, 937.
  115. Newns, D. M., et al., 1998, Appl. Phys. Lett. 73, 780.
  116. Nitzan, A., 2001, Annu. Rev. Phys. Chem. 52, 681.
  117. Novoselov, K. S., et al., 2004, Science 306, 666.
  118. Oh, S., M. Warusawithana, and J. N. Eckstein, 2004, Phys. Rev. B 70, 064509.
  119. Ohno, H., D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, 2000, Nature (London) 408, 944.
  120. Ohtomo, M. D., A. B. Muller, D. Grezul, and H. Y. Hwang, 2002, Nature (London) 419, 378.
  121. Okamoto, S., and A. J. Millis, 2004a, Nature (London) 428, 630.
  122. Okamoto, S., and A. J. Millis, 2004b, Phys. Rev. B 70, 075101.
  123. Okamoto, S., and A. J. Millis, 2004c, Phys. Rev. B 70, 195120.
  124. Parendo, K., et al., 2005, Phys. Rev. Lett. 95, 049902(E).
  125. Park, H., et al., 1999, Appl. Phys. Lett. 75, 301.
  126. Park, H., et al., 2000, Nature (London) 407, 57.
  127. Park, J., et al., 2002, Nature (London) 417, 722.
  128. Park, J., et al., 2003, Thin Solid Films 438-439, 457.
  129. Park, Y. D., et al., 2002, Science 295, 651.
  130. Pasupathy, A. N., et al., 2004, Science 306, 86.
  131. Pasupathy, A. N., et al., 2005, Nano Lett. 5, 203.
  132. Patrone, L., et al., 2003, Phys. Rev. Lett. 91, 096802.
  133. Pecchia, Alessandro, and Aldo Di Carlo, 2003, Rep. Prog. Phys. 67, 1497.
  134. Pesavento, P. V., R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, 2004, J. Appl. Phys. 96, 7312.
  135. Podzorov, V., V. M. Pudalov, and M. E. Gershenson, 2003, Appl. Phys. Lett. 82, 1739.
  136. Podzorov, V., S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, 2003, Appl. Phys. Lett. 83, 3504.
  137. Podzorov, V., et al., 2004a, Phys. Rev. Lett. 93, 086602.
  138. Podzorov, V., et al., 2004b, Appl. Phys. Lett. 84, 3301.
  139. Pope, M., and C. E. Swenberg, 1999, Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, New York).
  140. Potthoff, M., and W. Nolting, 1999, Phys. Rev. B 60, 7834.
  141. Ramachandran, G. K., et al., 2003, Science 300, 1413.
  142. Reed, M. A., et al., 1997, Science 278, 252.
  143. Reed, M. A., et al., 2001, Appl. Phys. Lett. 78, 3735.
  144. Reichert, J., et al., 2002, Phys. Rev. Lett. 88, 176804.
  145. Remskar, M., et al., 2001, Science 292, 479.
  146. Riordan, M., and L. Hoddeson, 1997, Crystal Fire: The Birth of the Information Age (Norton, New York).
  147. Rogers, J. A., et al., 2001, Proc. Natl. Acad. Sci. U.S.A. 98, 4835.
  148. Ruitenbeek, J. M. v., et al., 1996, Rev. Sci. Instrum. 67, 108.
  149. Runge, E., and E. K. U. Gross, 1984, Phys. Rev. Lett. 52, 997.
  150. Sachdev, S., 1999, Quantum Phase Transitions (Cambridge University Press, Cambridge, England).
  151. Sai, N., M. Zwolak, G. Vignale, and M. DiVentra, 2005, Phys. Rev. Lett. 94, 186810.
  152. Salamon, M. B., and M. Jaime, 2001, Rev. Mod. Phys. 73, 583.
  153. Salluzzo, M., A. Cassinese, G. M. De Luca, A. Gambardella, A. Prigiobbo, and R. Vaglio, 2004, Phys. Rev. B 70, 214528.
  154. Scheer, E., et al., 1998, Nature (London) 394, 154.
  155. Schwieger, S., M. Potthoff, and W. Nolting, 2003, Phys. Rev. B 67, 165408.
  156. Scott, J. C., 2003, J. Vac. Sci. Technol. A 21, 521.
  157. Sergueev, N., Q. F. Sun, H. Guo, B. G. Wang, and J. Wang, 2002, Phys. Rev. B 65, 165303.
  158. Shu, C., et al., 2000, Phys. Rev. Lett. 84, 5196.
  159. Shur, M., 1990, Physics of Semiconductor Devices (Prentice-Hall, Englewood Cliffs, NJ).
  160. Si, Q., and C. M. Varma, 1998, Phys. Rev. Lett. 81, 4951.
  161. Silinish, E. A., and V. Apek, 1994, Organic Molecular Crystals: Interaction, Localization, and Transport Phenomena (AIP, New York).
  162. Smakov, J., I. Martin, and A. Balatsky, 2002, Phys. Rev. Lett. 88, 037003.
  163. Smit, R. H. M., et al., 2002, Nature (London) 419, 906.
  164. Späh, R., et al., 1983, Appl. Phys. Lett. 43, 79.
  165. Späh, R., et al., 1985, Appl. Phys. Lett. 47, 871.
  166. Stahn, J., et al., 2005, Phys. Rev. B 71, 140509(R).
  167. Stipe, B. C., M. A. Rezaei, and W. Ho, 1998, Science 280, 1732.
  168. Stipe, B. C., M. A. Rezaei, and W. Ho, 1999, Phys. Rev. Lett. 82, 1724.
  169. Sundar, V. S., et al., 2004, Science 303, 1644.
  170. Sze, S. M., 1981, Physics of Semiconductor Devices (Wiley-Interscience, New York).
  171. Takagi, S., A. Toriumi, M. Iwase, and H. Tango, 1994, IEEE Trans. Electron Devices 41, 2357.
  172. Takeya, J., et al., 2003, J. Appl. Phys. 94, 5800.
  173. Tanaka, H., J. Zhang, and T. Kawai, 2002, Phys. Rev. Lett. 88, 027204.
  174. Tenne, R., L. Margulis, M. Genut, and G. Hodes, 1992, Nature (London) 360, 444.
  175. Tenne, R., and A. Wold, 1985, Appl. Phys. Lett. 47, 707.
  176. Tokura, Y., 2000, Ed., Colossal Magnetoresistive Oxides, Advances in Condensed Matter Science Vol. 2 (Gordon and Breach, New York).
  177. Troisi, A., M. A. Ratner, and A. J. Nitzan, 2003, Chem. Phys. 118, 6072.
  178. Uehara, M., S. Mori, C. H. Chen, and S. W. Cheong, 1999, Nature (London) 399, 560.
  179. Ueno, K., I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, and H. Takagi, 2003, Appl. Phys. Lett. 83, 1755.
  180. Ueno, K., I. H. Inoue, T. Yamada, H. Akoh, Y. Tokura, and H. Takagi, 2004, Appl. Phys. Lett. 84, 3726.
  181. Ujsaghy, O., J. Kroha, L. Szinyogh, and A. Zawadowski, 2000, Phys. Rev. Lett. 85, 2557.
  182. van den Brom, H. E., A. I. Yanson, and J. M. van Ruitenbeek, 1998, Physica B 252, 69.
  183. van der Wiel, W. G., S. De Franceschi, T. Fujisawa, J. M. Elzerman, S. Tarucha, and L. P. Kouwenhoven, 2000, Science 289, 2105.
  184. van der Zant, Herre S. J., Yann-Vai Kervennic, Menno Poot, Kevin O’Neill, Zeger de Groot, Jos M. Thijssen, Hubert B. Heersche, Nicolai Stuhr-Hansen, Thomas Bjørnholm, Daniel Vanmaekelbergh, Cornelis A. van Walree, and Leonardus W. Jenneskens, 2006, Faraday Discuss. 131, 347.
  185. Vollhardt, D., 1984, Rev. Mod. Phys. 56, 99.
  186. Wahl, P., L. Diekhoner, G. Wittich, L. Vitali, M. A. Schneider, and K. Kern, 2005, Phys. Rev. Lett. 95, 166601.
  187. Wang, W., T. Lee, I. Kretzschmar, and M. A. Reed, 2004, Nano Lett. 4, 643.
  188. Warusawithana, Maitri, Eugene V. Colla, J. N. Eckstein, and M. B. Weissman, 2003, Phys. Rev. Lett. 90, 036802.
  189. Wold, D. J., and C. D. Frisbie, 2001, J. Am. Chem. Soc. 123, 5549.
  190. Wu, T., et al., 2001, Phys. Rev. Lett. 86, 5998.
  191. Xiao, X., L. A. Nagahara, A. M. Rawlett, and N. J. Tao, 2005, J. Am. Chem. Soc. 127, 9235.
  192. Xiao, X. Y., B. Q. Xu, and N. J. Tao, 2004, Nano Lett. 4, 267.
  193. Xu, B. Q., et al., 2005a, J. Am. Chem. Soc. 127, 2386.
  194. Xu, B. Q., et al., 2005b, Nano Lett. 5, 1491.
  195. Xue, Y. Q., S. Datta, and M. A. Ratner, 2002, Chem. Phys. 281, 151.
  196. Yaliraki, S. N., et al., 1999, J. Am. Chem. Soc. 121, 3428.
  197. Yamada, Hiroyuki, et al., 2004, Science 305, 646.
  198. Yang, Z., M. Chshiev, M. Zwolak, Y.-C. Chen, and M. Di Ventra, 2005, Phys. Rev. B 71, 041402(R).
  199. Yang, Z., N. D. Lang, and M. Di Ventra, 2003, Appl. Phys. Lett. 82, 1938.
  200. Yazdani, A., D. M. Eigler, and N. D. Lang, 1996, Science 272, 1921.
  201. Yu, L. H., Z. K. Keane, J. W. Ciszek, L. Cheng, J. M. Tour, T. Baruah, M. R. Pederson, and D. Natelson, 2005, Phys. Rev. Lett. 95, 256803.
  202. Yu, L. H., and D. Natelson, 2004a, Nano Lett. 4, 79.
  203. Yu, L. H., and D. Natelson, 2004b, Nanotechnology 15, S517.
  204. Yu, L. H., et al., 2004, Phys. Rev. Lett. 93, 266802.
  205. Zhang, J., J. Liu, J. L. Huang, P. Kim, and C. M. Lieber, 1996, Science 274, 757.
  206. Zhang, P., Q. K. Xue, Y. P. Wang, and X. C. Xie, 2002, Phys. Rev. Lett. 89, 286803.
  207. Zhang, Y., J. P. Small, M. E. S. Amori, and P. Kim, 2005, Phys. Rev. Lett. 94, 176803.
  208. Zhao, A., Q. Li, L. Chan, H. Xiang, W. Wang, S. Pan, B. Wang, X. Xiao, J. Yang, J. G. Hou, and Q. Zhu, 2005, Science 309, 1542.
  209. Zhitenev, N. B., A. Erbe, and Z. Bao, 2004, Phys. Rev. Lett. 92, 186805.
  210. Zimmerman, D. T., and G. Agnolet, 2001, Rev. Sci. Instrum. 72, 1781.
  211. Zwolak, M., and M. Di Ventra, 2002, Appl. Phys. Lett. 81, 925.

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Rev. Mod. Phys. 78, 1185– Published 10 November, 2006

    © 2006 American Physical Society

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