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Theory of semiconductor superlattice electronic structure

D. L. Smith and C. Mailhiot*

D. L. Smith

  • Los Alamos National Laboratory, Los Alamos, New Mexico 87545

C. Mailhiot*

  • Xerox Webster Research Center, Webster, New York 14580

  • *Present address: Lawrence Livermore National Laboratory, Livermore, CA 94550.
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Rev. Mod. Phys. 62, 173 – Published 1 January, 1990

DOI: https://doi.org/10.1103/RevModPhys.62.173

Abstract

The authors review the theory of semiconductor superlattice electronic structure. First a survey of theoretical methods is presented. These methods can be divided into two general classes: the supercell approach in which the superlattice is viewed as a material with a large unit cell, and the boundary-condition approach in which bulk wave functions in the constituent semiconductors are matched at the superlattice interfaces. Supercell approaches are essentially the same as conventional band-structure methods. They can only be applied to thin-layer superlattices because of numerical cost. The authors discuss problems of interface matching that occur in various boundary-condition methods and relate these methods to each other. A particular boundary-condition method is used to discuss the electronic structure of various III-V semiconductor superlattices. Emphasis is placed on discussing the qualitatively different behavior that can arise because of different energy-band lineups, strain conditions, and growth orientations. The authors compare the results of three commonly used boundary-condition methods and find generally good agreement.

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Rev. Mod. Phys. 62, 173– Published 1 January, 1990

    © 1990 American Physical Society

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