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Electronic properties of two-dimensional systems

Tsuneya Ando*, Alan B. Fowler, and Frank Stern

Tsuneya Ando*

  • Institute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598

Alan B. Fowler and Frank Stern

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

  • *Permanent address.
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Rev. Mod. Phys. 54, 437 – Published 1 April, 1982

DOI: https://doi.org/10.1103/RevModPhys.54.437

Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Rev. Mod. Phys. 54, 437– Published 1 April, 1982

    © 1982 American Physical Society

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