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Model for the Metal-Nonmetal Transition in Impure Semiconductors
Rev. Mod. Phys. 40, 833 – Published 1 October, 1968
DOI: https://doi.org/10.1103/RevModPhys.40.833
Abstract
It is convenient to classify the impurity states in semiconductors into three groups: low, intermediate, and high. Even at high concentrations anomalous (i.e., nonmetallic) properties are observed. A simple "inhomogeneity" model is proposed in which the impurity states are regarded as spatial mixtures of metallic and nonmetallic regions. The model provides an explanation of the anomalous properties, at least qualitatively.
References (12)
- R. K. Sundfors and D. F. Holcomb, Phys. Rev. 136, A810 (1964)
- W. Sasaki, J. Phys. Soc. Japan Suppl. 21, 543 (1966)
- W. Sasaki, J. Phys. Soc. Japan 20, 2293 (1965)
- S. Maekawa, J. Phys. Soc. Japan Suppl. 21, 574 (1966)
- D. H. Damon and A. N. Gerritsen, Phys. Rev. 127, 405 (1962)
- W. Sasaki, S. Maekawa, and J. Kinoshita, J. Phys. Soc. Japan 22, 928 (1967)
- C. Yamanouchi, J. Phys. Soc. Japan 18, 1775 (1963)
- H. Nishimura, Phys. Rev. 138, A815 (1965)
- T. Kasuya and N. Mikoshiba (private communication)
- Y. Toyozawa, J. Phys. Soc. Japan 17, 986 (1962)
- N. F. Mott, Phil. Mag. 6, 278 (1961)
- W. Kohn, Solid State Phys. 5, 257 (1967)