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Lattice Instability Associated with Metal—Semiconductor Transitions

EIICHI HANAMURA

EIICHI HANAMURA

  • Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo

Rev. Mod. Phys. 40, 744 – Published 1 October, 1968

DOI: https://doi.org/10.1103/RevModPhys.40.744

Abstract

As shown by Adler and Brooks, the lattice distortion induces the change of electronic states in VO2 and V2O3. As a consequence, the dipole-dipole interaction of lattice vibration is modified. Taking into account this electron-lattice interaction and solving motion of lattice vibration self-consistently, the following results were obtained. The instability of the lattice-vibration mode of the vanadium ions occurs at Tc on decreasing temperature, on increasing the temperature from the semiconductor region, the instability occurs at a higher temperature T0>Tc. The temperature dependence of the displacement and the dielectric constant of the lattice system is given near the first-order phase transition temperature, and this explains the hysteresis of NMR and conductivity measurements. The parameters obtained are reasonable. This theory also predicts the anomalous behavior of diffuse scattering of x ray and temperature dependence of the frequency spectrum of the lattice vibration.

References (11)

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