- Open Access
Interaction-Driven Topological Transitions in Monolayer
Phys. Rev. X 16, 031017 – Published 24 July, 2026
DOI: https://doi.org/10.1103/456g-q7bd
Abstract
Discovering materials that combine topological phenomena with correlated electron behavior is a central pursuit in quantum materials research. Monolayer has recently emerged as a promising platform in this context, hosting robust quantum spin Hall insulator (QSHI) phases both within a single-particle gap and within a correlation-induced gap arising from van Hove singularities (vHSs), accessed via electrostatic doping. Its intrinsic monolayer nature offers exceptional tunability and the potential to realize a rich variety of interaction-driven topological phases. In this work, we combine theory and experiment to map the phase landscape of monolayer . Using Hartree-Fock calculations, we investigate the interaction-driven phase diagram near the vHSs under commensurate filling conditions. By systematically tuning the dielectric screening and strain, we uncover a rich set of ground states—including QSHI, trivial insulator, higher-order topological insulator, and metallic phase—among which are interaction-driven topological phase transitions. Experimentally, we perform local and nonlocal transport measurements across a broad set of devices. Because of unavoidable strain variations during fabrication, the devices exhibit several distinct transport regimes, whose evolution is consistent with the theoretically predicted phase diagram. Finally, band-projected exact diagonalization together with insulating transport features at fractional fillings provide preliminary signatures consistent with a time-reversal-symmetric fractional QSHI in this system. Together, our results lay the groundwork for understanding correlation-driven topological phenomena in and open new directions for engineering exotic quantum phases in low-dimensional materials beyond the limitations of moiré superlattices.
Physics Subject Headings (PhySH)
Popular Summary
Identifying materials that combine topological order with strong electron interactions is a primary goal in quantum materials research, since stabilizing such exotic states has usually required complex, artificially engineered moiré structures. We addressed this challenge through a comprehensive theoretical and experimental study of monolayer . Its electronic structure contains van Hove singularities, energies where electronic states pile up and sharply amplify interactions when reached by applying a voltage. Using Hartree-Fock and exact diagonalization simulations, we mapped a diverse phase diagram including metallic states, ordinary and topological insulators, higher-order topological insulators and fractional quantum spin Hall insulator, all controlled by subtle changes in mechanical strain and dielectric screening. Transport measurements across more than 100 devices confirmed that these interaction-driven phases emerge from the slight strain variations introduced during standard fabrication. The results show that intrinsic crystals can achieve the same topological tunability as twisted heterostructures, establishing a simpler platform for engineering correlated topological states and designing next-generation quantum components.
Article Text
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