Impact of magnetism on Fe phase diagram under extreme conditions
Grigory S. Smirnov, Oleg E. Peil, Andrei V. Ruban, Sergei I. Simak, and Anatoly B. Belonoshko
Phys. Rev. Materials 9, L040601 (2025) - Published 23 April, 2025
Duncan Zavanelli, Ruben Bueno Villoro, Raana Hatami Naderloo, Nicolas Perez Rodriguez, Siyuan Zhang, Ran He, Christina Scheu, and G. Jeffrey Snyder
Phys. Rev. Materials 9, 045402 (2025) - Published 25 April, 2025
Electrical resistance from grain boundary phases (complexions) is detrimental to thermoelectric performance. A promising strategy for mitigating this resistance is altering the composition at a grain boundary through complexion transitions. In NbFeSb, increasing the Ti content has been shown to result in Ti-rich boundaries that effectively eliminate boundary resistance and make Ti-doped NbFeSb a high performing thermoelectric. In this study, a model based on the average band offset between the grain boundaries and grain is used to identify a resistive to nonresistive complexion transition in NbFeSb. This method can be applied to any material with thermoelectric transport data and grain size measurements.
Philipp Koller, Thomas Astner, Benedikt Tissot, Guido Burkard, and Michael Trupke
Phys. Rev. Materials 9, L043201 (2025) - Published 24 April, 2025
Nuclear spins in crystals are strong candidates for the storage of quantum information in quantum communication and computing. Addressing their energy states is, however, challenging due to their small gyromagnetic moment. The authors show that the presence of strain enables fast state control in the hyperfine manifold of the spin 7/2 nuclear qudit of vanadium in silicon carbide. This high-dimensional system offers a hardware-efficient route to fault-tolerant quantum operations. The qudit also features a telecom-band optical transition, paving the way for scalable light-matter interfaces. These results mark a significant step toward integrating high-dimensional quantum memories with optical quantum networks.
Grigory S. Smirnov, Oleg E. Peil, Andrei V. Ruban, Sergei I. Simak, and Anatoly B. Belonoshko
Phys. Rev. Materials 9, L040601 (2025) - Published 23 April, 2025
Yue Liu, Yuhang Zhang, Zouyouwei Lu, Dong Li, Yuki M. Itahashi, Zhanyi Zhao, Jiali Liu, Jihu Lu, Feng Wu, Kui Jin, Hua Zhang, Ziyi Liu, Xiaoli Dong, and Zhongxian Zhao
Phys. Rev. Materials 9, L041001 (2025) - Published 28 April, 2025
J. D. Miller, H. J. Trodahl, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Phys. Rev. Materials 9, L041401 (2025) - Published 4 April, 2025
Philipp Koller, Thomas Astner, Benedikt Tissot, Guido Burkard, and Michael Trupke
Phys. Rev. Materials 9, L043201 (2025) - Published 24 April, 2025
Nuclear spins in crystals are strong candidates for the storage of quantum information in quantum communication and computing. Addressing their energy states is, however, challenging due to their small gyromagnetic moment. The authors show that the presence of strain enables fast state control in the hyperfine manifold of the spin 7/2 nuclear qudit of vanadium in silicon carbide. This high-dimensional system offers a hardware-efficient route to fault-tolerant quantum operations. The qudit also features a telecom-band optical transition, paving the way for scalable light-matter interfaces. These results mark a significant step toward integrating high-dimensional quantum memories with optical quantum networks.
Giuseppe Ammirati, Patrick O'Keeffe, Stefano Turchini, Daniele Catone, Alessandra Paladini, Francesco Toschi, Stevan Gavranovic, Jan Pospisil, Giovanni Mannino, Salvatore Valastro, and Faustino Martelli
Phys. Rev. Materials 9, 043601 (2025) - Published 7 April, 2025
Pedro S. Lance, Daniel A. Vega, Richard A. Register, and Leopoldo R. Gómez
Phys. Rev. Materials 9, 043602 (2025) - Published 9 April, 2025
C. L. Williams, D. T. Mallick, J. T. Lloyd, J. P. Ligda, and J. D. Clayton
Phys. Rev. Materials 9, 043603 (2025) - Published 15 April, 2025
M. P. Belov, O. Yu. Vekilova, A. V. Lugovskoy, O. M. Krasilnikov, Yu. Kh. Vekilov, A. B. Belonoshko, and S. I. Simak
Phys. Rev. Materials 9, 043604 (2025) - Published 28 April, 2025
Shengluo Ma, Nanyu Wang, and Shenghong Ju
Phys. Rev. Materials 9, 043801 (2025) - Published 17 April, 2025
Jason B. Gibson, Tesia D. Janicki, Ajinkya C. Hire, Chris Bishop, J. Matthew D. Lane, and Richard G. Hennig
Phys. Rev. Materials 9, 043802 (2025) - Published 22 April, 2025
Shubha R. Kharel, Fanchen Meng, Xiaohui Qu, Matthew R. Carbone, and Deyu Lu
Phys. Rev. Materials 9, 043803 (2025) - Published 24 April, 2025
X-ray absorption spectroscopy (XAS) is a powerful technique for probing local chemical environments. However, interpreting XAS spectra remains challenging, due to high computational costs and the need for domain expertise. To overcome these barriers, we introduce OmniXAS, a graph neural network framework that leverages transfer learning to directly predict XAS spectra from atomic structures. By capturing the shared spectral trends across the 3d transition metal family, OmniXAS learns a universal model that can be effectively fine-tuned on each specific element. OmniXAS achieves high predictive accuracy as demonstrated on the K-edge spectra of eight 3d transition metals (Ti–Cu), enabling real-time prediction of XAS spectra with minimal computational overhead.
Jyun-Hong Chen, Yann-Wen Lan, Lain-Jong Li, Chiashain Chuang, Chii-Dong Chen, and Yuan-Liang Zhong
Phys. Rev. Materials 9, 044001 (2025) - Published 8 April, 2025
Weiling Chen, Xian Lin, Jian-Min Zhang, Guigui Xu, Kehua Zhong, and Zhigao Huang
Phys. Rev. Materials 9, 044002 (2025) - Published 9 April, 2025
Hao Yin (尹浩), Mark Hutter, Christian Wagner, F. Stefan Tautz, François C. Bocquet, and Christian Kumpf
Phys. Rev. Materials 9, 044003 (2025) - Published 9 April, 2025
Ruoyan Xu, Junlin Luo, Rui Peng, Haiyu Meng, Xiong-Xiong Xue, and Yee Sin Ang
Phys. Rev. Materials 9, 044004 (2025) - Published 21 April, 2025
Xin Zhang, Shihao Zhang, Zhicheng Jiang, Yichen Yang, Zhengtai Liu, Song Yang, Jinlong Jiao, Litao Yu, Wei Xia, Xia Wang, Na Yu, Zhiqiang Zou, Jie Ma, Yongsheng Liu, Dawei Shen, Jianpeng Liu, and Yanfeng Guo
Phys. Rev. Materials 9, 044201 (2025) - Published 15 April, 2025
Priyanka Meena, Mohit Mudgal, Sonika Bagga, V. K. Tiwari, Vivek Kumar Malik, C. S. Yadav, and Jayita Nayak
Phys. Rev. Materials 9, 044202 (2025) - Published 18 April, 2025
Shyam Raj Karullithodi, Vadym Kulichenko, Mario A. Plata, Andrzej Ptok, Sang-Eon Lee, Gregory T. McCandless, Julia Y. Chan, and Luis Balicas
Phys. Rev. Materials 9, 044203 (2025) - Published 18 April, 2025
M. Mosaferi, M. Aktas, D. Romanin, and A. W. Chin
Phys. Rev. Materials 9, 044204 (2025) - Published 28 April, 2025
Tomáš Maleček, Guillaume Agnus, Thomas Maroutian, Lukáš Horák, Petr Machovec, Valérie Demange, Aleš Melzer, Michal Hubert, Jan Prokleška, Philippe Lecoeur, and Martin Veis
Phys. Rev. Materials 9, 044401 (2025) - Published 1 April, 2025
Haodong Fan, Mingzhang Wei, Zhongshu Feng, Birui Wu, Menghao Jin, Ziji Shao, Changqiu Yu, Bo Liu, Wenjun Li, and Tiejun Zhou
Phys. Rev. Materials 9, 044402 (2025) - Published 1 April, 2025
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar, Aranya Goswami, Jason T. Dong, Aaron N. Engel, Yu-Hao Chang, Connor P. Dempsey, Makoto Hashimoto, Donghui Lu, Noa Marom, and Chris J. Palmstrøm
Phys. Rev. Materials 9, 044403 (2025) - Published 2 April, 2025
Pengxiang Hou, Shengkai Liu, Zhiyu Liu, Yajie Han, Yuqi Wang, Zhongnan Xi, Yu Deng, Yurong Yang, and Di Wu
Phys. Rev. Materials 9, 044404 (2025) - Published 2 April, 2025
Sivert Dagenborg, Andrea D'Alessio, Eric Brand, Nikolas Vitaliti, Alessandro Palliotto, Ingrid Hallsteinsen, Felix Trier, Dae-Sung Park, Nini Pryds, and Magnus Nord
Phys. Rev. Materials 9, 044405 (2025) - Published 7 April, 2025
Scanning Transmission Electron Microscopy - Differential Phase Contrast (STEM-DPC) is a 4D-STEM technique that allows quantitative characterization of electromagnetic fields down to nanoscale resolution. However, a significant challenge arises from diffractive intensity scattering in crystalline materials, which introduces distortive contrast that can obscure magnetic imaging. This work details how to minimize this issue, which the authors demonstrate using a ferromagnetic freestanding LaSrMnO thin film to quantify diffraction contrast variations under different orientations and processing conditions. All the data and scripts are made publicly available, providing a platform for others to test their own processing.
R. K. Patel, K. S. Chikara, S. M. Hossain, M. Majumder, Chandrani Nath, S. M. Yusuf, M. P. Saravanan, A. K. Bera, and A. K. Pramanik
Phys. Rev. Materials 9, 044406 (2025) - Published 10 April, 2025
Hongyi Guan, Negar Ahani, Carlos García-Cervera, and Ananya Renuka Balakrishna
Phys. Rev. Materials 9, 044407 (2025) - Published 11 April, 2025
M. Y. Cui, Z. Y. Zhao, Y. Q. Wang, and Z. Z. He
Phys. Rev. Materials 9, 044408 (2025) - Published 16 April, 2025
David Howe, Zhen Wang, M. Saghayezhian, Zeeshan Ali, Prahald Siwakoti, Haoming Ling, Yan Liang, E. W. Plummer, Yimei Zhu, and Jiandi Zhang
Phys. Rev. Materials 9, 044409 (2025) - Published 17 April, 2025
Dmitry M. Korotin, Dmitry Y. Novoselov, Yaroslav M. Plotnikov, and Vladimir I. Anisimov
Phys. Rev. Materials 9, 044410 (2025) - Published 21 April, 2025
J. Qi, H. Wang, Q. Zhang, Y. Kawakita, K. Shibata, P. Miao, S. Torii, Y. K. Huang, D. Li, K. Singh, R. Rawat, T. Kamiyama, D. Vaknin, E. P. Gilbert, Z. D. Zhang, K. Nakajima, and B. Li
Phys. Rev. Materials 9, 044411 (2025) - Published 22 April, 2025
Robin Hilgers, Daniel Wortmann, and Stefan Blügel
Phys. Rev. Materials 9, 044412 (2025) - Published 29 April, 2025
Anumita Bose, Shubham Purwar, Setti Thirupathaiah, and Awadhesh Narayan
Phys. Rev. Materials 9, 044413 (2025) - Published 30 April, 2025
F. Henssler, K. Willa, M. Frachet, T. Lacmann, D. A. Chaney, R. Heid, M. Merz, A.-A. Haghighirad, and M. Le Tacon
Phys. Rev. Materials 9, 044801 (2025) - Published 2 April, 2025
Miao Li, Zhenyu Ding, Yuqiang Liu, Liangyu Li, Gang Wu, and Xiaoping Yang
Phys. Rev. Materials 9, 044802 (2025) - Published 21 April, 2025
Muhammad Zubair, Dai Q. Ho, Duy Quang To, Shoaib Khalid, and Anderson Janotti
Phys. Rev. Materials 9, 045001 (2025) - Published 23 April, 2025
A. Naeimi and S.-A. Biehs
Phys. Rev. Materials 9, 045201 (2025) - Published 24 April, 2025
Harshita Singh, Sobhit Singh, Sayandeep Ghosh, Prativa Pramanik, Vasant Sathe, Roland Mathieu, Wilfrid Prellier, and Subhash Thota
Phys. Rev. Materials 9, 045202 (2025) - Published 25 April, 2025
Björn Schwarz, Stefan Mangold, Hang Li, Sylvio Indris, and Helmut Ehrenberg
Phys. Rev. Materials 9, 045401 (2025) - Published 22 April, 2025
Duncan Zavanelli, Ruben Bueno Villoro, Raana Hatami Naderloo, Nicolas Perez Rodriguez, Siyuan Zhang, Ran He, Christina Scheu, and G. Jeffrey Snyder
Phys. Rev. Materials 9, 045402 (2025) - Published 25 April, 2025
Electrical resistance from grain boundary phases (complexions) is detrimental to thermoelectric performance. A promising strategy for mitigating this resistance is altering the composition at a grain boundary through complexion transitions. In NbFeSb, increasing the Ti content has been shown to result in Ti-rich boundaries that effectively eliminate boundary resistance and make Ti-doped NbFeSb a high performing thermoelectric. In this study, a model based on the average band offset between the grain boundaries and grain is used to identify a resistive to nonresistive complexion transition in NbFeSb. This method can be applied to any material with thermoelectric transport data and grain size measurements.
Lingyun Dai, Man Li, and Yongjie Hu
Phys. Rev. Materials 9, 045403 (2025) - Published 25 April, 2025
Alessio Zaccone
Phys. Rev. Materials 9, 046001 (2025) - Published 14 April, 2025