First-principles electron-phonon interactions and electronic transport in large-angle twisted bilayer graphene
Shiyuan Gao, Jin-Jian Zhou, Yao Luo, and Marco Bernardi
Phys. Rev. Materials 8, L051001 (2024) - Published 22 May, 2024
Randall D. Kamien and Daniel Ucko
Phys. Rev. Materials 8, 050001 (2024) - Published 21 May, 2024
Shun'ichiro Kurosawa, Tomoya Higo, Shota Saito, Ryota Uesugi, and Satoru Nakatsuji
Phys. Rev. Materials 8, 054206 (2024) - Published 28 May, 2024
This study investigates the anomalous Nernst effect (ANE), a novel technique to convert heat into electricity utilizing the magnetic and topological properties of materials. Unlike the Seebeck effect, ANE employs established thin-film technology to develop practical thermoelectric devices. We have successfully fabricated high-quality (0001)-oriented epitaxial films of the topological kagome ferromagnet FeSn and characterized their thermoelectric properties. These films exhibit a large “zero-field” ANE signal of ~3 µV/K at room temperature due to large magneto-crystalline anisotropy as well as the shape anisotropy for in-plane magnetization arrangements, making them ideal for applications such as heat flux sensors and energy harvesters. This breakthrough in utilizing FeSn films not only advances the understanding of ANE in topological magnets but also paves the way for the design of high-performance thermoelectric devices.
Aurland K. Watkins, Dirk Johrendt, Vojtech Vlcek, Stephen D. Wilson, and Ram Seshadri
Phys. Rev. Materials 8, 054204 (2024) - Published 20 May, 2024
A reliable interlayer band structure of the kagome superconductor CsVSb is critical for understanding emergent phenomena like the charge density wave ordering and for classifying the topology. Here, the authors present a survey of computational techniques aimed at comparing the electronic interactions between kagome layers in CsVSb. This study highlights the computational parameters and plotting methods that lead to differing band behaviors. Within conventional DFT, the parameters employed during structural relaxation are critical in determining the electronic structure between kagome layers. However, higher levels of computational theory contrast these results and point to the increased role of interlayer interactions.
J. Green, Eve Emmanouilidou, Harry W. T. Morgan, William T. Laderer, Chaowei Hu, Jonathan Loera, Anastassia N. Alexandrova, and Ni Ni
Phys. Rev. Materials 8, 054205 (2024) - Published 23 May, 2024
Inspired by the nonmagnetic topological materials database, the authors investigated the 3D fermiology and band topology of the Topological Crystalline Insulator (TCI) candidate SrAgSb. The fermiology, revealed by angular-dependent quantum oscillations, shows excellent agreement with first-principles calculations. Symmetry and topology analysis result in two potential sets of topological invariants, suggesting the emergence of crystal-symmetry-protected gapless Dirac surface states either on the as-grown ab planes or on both the ab planes and as-grown mirror planes. Their findings provide evidence that SrAgSb is a promising TCI for exploring topological surface states protected by crystal symmetry.
Shiyuan Gao, Jin-Jian Zhou, Yao Luo, and Marco Bernardi
Phys. Rev. Materials 8, L051001 (2024) - Published 22 May, 2024
Sajjan Sheoran and Saswata Bhattacharya
Phys. Rev. Materials 8, L051401 (2024) - Published 15 May, 2024
Guomin Zhu, Alex Hallett, Nicholas G. Combs, Hanbyeol Jeong, Arda Genc, John W. Harter, and Susanne Stemmer
Phys. Rev. Materials 8, L051801 (2024) - Published 8 May, 2024
Daiki Takaku, Ryo Suzuki, Kenichi Kojima, and Masaru Tachibana
Phys. Rev. Materials 8, L052601 (2024) - Published 30 May, 2024
Feiyu Li, Ning Guo, Qiang Zheng, Yang Shen, Shilei Wang, Qihui Cui, Chao Liu, Shanpeng Wang, Xutang Tao, Guang-Ming Zhang, and Junjie Zhang
Phys. Rev. Materials 8, 053401 (2024) - Published 8 May, 2024
Nikhil Khatavkar and Abhishek Kumar Singh
Phys. Rev. Materials 8, 053601 (2024) - Published 7 May, 2024
Xianteng Zhou, Hongquan Song, Chaokun Guo, Zhen Yang, and Fuyang Tian
Phys. Rev. Materials 8, 053602 (2024) - Published 15 May, 2024
K. S. Rabinovich, G. Kim, A. N. Yaresko, G. Christiani, G. Logvenov, B. Keimer, and A. V. Boris
Phys. Rev. Materials 8, 053801 (2024) - Published 1 May, 2024
Xiaoni Zhang, Yuki Tsujikawa, Kazuki Yamaguchi, Masashige Miyamoto, Masafumi Horio, Kunio Yubuta, Hiroshi Ando, Mei Yuan, Kenichi Ozawa, Kazumasa Sugiyama, Takahiro Kondo, and Iwao Matsuda
Phys. Rev. Materials 8, 054001 (2024) - Published 1 May, 2024
Verena Brehm, Stefan Stagraczyński, Józef Barnaś, Anna Dyrdał, and Alireza Qaiumzadeh
Phys. Rev. Materials 8, 054002 (2024) - Published 3 May, 2024
Zhengyuan Tu, Yunhua Wang, Weitu Liao, Tao Hu, and Shengjun Yuan
Phys. Rev. Materials 8, 054003 (2024) - Published 21 May, 2024
Mitisha Jain, Silvan Kretschmer, Jannik Meyer, and Arkady V. Krasheninnikov
Phys. Rev. Materials 8, 054004 (2024) - Published 24 May, 2024
Lin Han, Wencong Sun, Pingwei Liu, Xianqing Lin, Dan Liu, and David Tománek
Phys. Rev. Materials 8, 054005 (2024) - Published 30 May, 2024
Wenhao Liu, Yangzi Zheng, Aswin Lakshmi Narayanan Kondusamy, David L. Scherm, Anton V. Malko, and Bing Lv
Phys. Rev. Materials 8, 054006 (2024) - Published 29 May, 2024
Alexandre Gauthier, Jonathan A. Sobota, Nicolas Gauthier, Costel R. Rotundu, Zhi-Xun Shen, and Patrick S. Kirchmann
Phys. Rev. Materials 8, 054201 (2024) - Published 7 May, 2024
Junseok Oh, Vincent Humbert, Gregory J. MacDougall, Matthew J. Gilbert, and Nadya Mason
Phys. Rev. Materials 8, 054202 (2024) - Published 8 May, 2024
Inseo Kim, Byungkyun Kang, Hyunsoo Kim, and Minseok Choi
Phys. Rev. Materials 8, 054203 (2024) - Published 13 May, 2024
Aurland K. Watkins, Dirk Johrendt, Vojtech Vlcek, Stephen D. Wilson, and Ram Seshadri
Phys. Rev. Materials 8, 054204 (2024) - Published 20 May, 2024
A reliable interlayer band structure of the kagome superconductor CsVSb is critical for understanding emergent phenomena like the charge density wave ordering and for classifying the topology. Here, the authors present a survey of computational techniques aimed at comparing the electronic interactions between kagome layers in CsVSb. This study highlights the computational parameters and plotting methods that lead to differing band behaviors. Within conventional DFT, the parameters employed during structural relaxation are critical in determining the electronic structure between kagome layers. However, higher levels of computational theory contrast these results and point to the increased role of interlayer interactions.
J. Green, Eve Emmanouilidou, Harry W. T. Morgan, William T. Laderer, Chaowei Hu, Jonathan Loera, Anastassia N. Alexandrova, and Ni Ni
Phys. Rev. Materials 8, 054205 (2024) - Published 23 May, 2024
Inspired by the nonmagnetic topological materials database, the authors investigated the 3D fermiology and band topology of the Topological Crystalline Insulator (TCI) candidate SrAgSb. The fermiology, revealed by angular-dependent quantum oscillations, shows excellent agreement with first-principles calculations. Symmetry and topology analysis result in two potential sets of topological invariants, suggesting the emergence of crystal-symmetry-protected gapless Dirac surface states either on the as-grown ab planes or on both the ab planes and as-grown mirror planes. Their findings provide evidence that SrAgSb is a promising TCI for exploring topological surface states protected by crystal symmetry.
Shun'ichiro Kurosawa, Tomoya Higo, Shota Saito, Ryota Uesugi, and Satoru Nakatsuji
Phys. Rev. Materials 8, 054206 (2024) - Published 28 May, 2024
This study investigates the anomalous Nernst effect (ANE), a novel technique to convert heat into electricity utilizing the magnetic and topological properties of materials. Unlike the Seebeck effect, ANE employs established thin-film technology to develop practical thermoelectric devices. We have successfully fabricated high-quality (0001)-oriented epitaxial films of the topological kagome ferromagnet FeSn and characterized their thermoelectric properties. These films exhibit a large “zero-field” ANE signal of ~3 µV/K at room temperature due to large magneto-crystalline anisotropy as well as the shape anisotropy for in-plane magnetization arrangements, making them ideal for applications such as heat flux sensors and energy harvesters. This breakthrough in utilizing FeSn films not only advances the understanding of ANE in topological magnets but also paves the way for the design of high-performance thermoelectric devices.
Diego Carranza-Celis, Christian T. Wolowiec, Ali C. Basaran, Pavel Salev, Ivan K. Schuller, and Juan Gabriel Ramirez
Phys. Rev. Materials 8, 054401 (2024) - Published 1 May, 2024
Mariem Gharbi, Alain Sylvestre, Jean-Luc Dellis, Françoise Le Marrec, and Nathalie Lemée
Phys. Rev. Materials 8, 054402 (2024) - Published 3 May, 2024
Felix Bernhardt, Florian A. Pfeiffer, Felix Schug, Simone Sanna, Anton Pfannstiel, Tobias Hehemann, Mirco Imlau, and Steffen Ganschow
Phys. Rev. Materials 8, 054403 (2024) - Published 7 May, 2024
Chun-Hao Lai, Chin-Wei Wang, Hung-Cheng Wu, Yu-Hui Liang, Andrew J. Studer, Wei-Tin Chen, and Chao-Hung Du
Phys. Rev. Materials 8, 054404 (2024) - Published 7 May, 2024
Haruki Takei, Satomi Ito, Kenta Iwamoto, Yumiko Katayama, Kazunori Ueno, Hideki Kuwahara, and Takuro Katsufuji
Phys. Rev. Materials 8, 054405 (2024) - Published 7 May, 2024
Felix Bernhardt, Leonard M. Verhoff, Nils A. Schäfer, Alexander Kapp, Christa Fink, Wafaa Al Nachwati, Umar Bashir, Detlef Klimm, Fatima El Azzouzi, Uliana Yakhnevych, Yuriy Suhak, Harald Schmidt, Klaus-Dieter Becker, Steffen Ganschow, Holger Fritze, and Simone Sanna
Phys. Rev. Materials 8, 054406 (2024) - Published 7 May, 2024
Ralph el Hage, Tianxing D. Wang, Junjie Li, Ali C. Basaran, Felipe Torres, and Ivan K. Schuller
Phys. Rev. Materials 8, 054407 (2024) - Published 13 May, 2024
Bart Folkers, Thies Jansen, Thijs J. Roskamp, Pim Reith, André Timmermans, Daen Jannis, Nicolas Gauquelin, Johan Verbeeck, Hans Hilgenkamp, and Carlos M. M. Rosário
Phys. Rev. Materials 8, 054408 (2024) - Published 13 May, 2024
Yankun Wang, Saud Bin Anooz, Gang Niu, Jinyan Zhao, Martin Schmidbauer, Lingyan Wang, Wei Ren, and Jutta Schwarzkopf
Phys. Rev. Materials 8, 054409 (2024) - Published 13 May, 2024
Igor Lyalin, Katherine Robinson, Alexander J. Bishop, Gabriel Calderón Ortiz, Sadikul Alam, Jinwoo Hwang, and Roland K. Kawakami
Phys. Rev. Materials 8, 054410 (2024) - Published 13 May, 2024
Milo Sprague, Anup Pradhan Sakhya, Sabin Regmi, Mazharul Islam Mondal, Iftakhar Bin Elius, Nathan Valadez, Kali Booth, Tetiana Romanova, Andrzej Ptok, Dariusz Kaczorowski, and Madhab Neupane
Phys. Rev. Materials 8, 054411 (2024) - Published 15 May, 2024
Taiki Shiotani, Takeshi Waki, Yoshikazu Tabata, and Hiroyuki Nakamura
Phys. Rev. Materials 8, 054412 (2024) - Published 15 May, 2024
Seyedmojtaba Seyedraoufi, Elin Dypvik Sødahl, Carl Henrik Görbitz, and Kristian Berland
Phys. Rev. Materials 8, 054413 (2024) - Published 20 May, 2024
M. Reehuis, M. Tovar, B. Klemke, D. M. Többens, A. Hoser, and J.-U. Hoffmann
Phys. Rev. Materials 8, 054414 (2024) - Published 21 May, 2024
Takahito Takeda, Takuma Arai, Kohei Yamagami, Le Duc Anh, Masaaki Tanaka, Masaki Kobayashi, and Shinobu Ohya
Phys. Rev. Materials 8, 054415 (2024) - Published 21 May, 2024
X. Henning, K. Alhada-Lahbabi, D. Deleruyelle, B. Gautier, L. Schlur, T. Fix, S. Colis, A. Dinia, and M. V. Rastei
Phys. Rev. Materials 8, 054416 (2024) - Published 21 May, 2024
Lifen Xiang, Peng Cai, Qiang Li, Qian Shi, Tian Miao, Yu Bai, Yang Yu, Fanli Lan, Shuaifei Guo, Guorui Chen, Wenbin Wang, Lifeng Yin, Yuanbo Zhang, and Jian Shen
Phys. Rev. Materials 8, 054417 (2024) - Published 30 May, 2024
S. G. Pavlov and N. V. Abrosimov
Phys. Rev. Materials 8, 054601 (2024) - Published 8 May, 2024
Siddhartha S. Nathan, Danilo Puggioni, and James M. Rondinelli
Phys. Rev. Materials 8, 054602 (2024) - Published 13 May, 2024
Channyung Lee, Michael A. Scarpulla, and Elif Ertekin
Phys. Rev. Materials 8, 054603 (2024) - Published 13 May, 2024
Muhammad Zubair, Igor Evangelista, Shoaib Khalid, Bharat Medasani, and Anderson Janotti
Phys. Rev. Materials 8, 054604 (2024) - Published 20 May, 2024
T. J. F. Verstijnen, D. Tjeertes, A. D. Rice, K. Alberi, and P. M. Koenraad
Phys. Rev. Materials 8, 054605 (2024) - Published 20 May, 2024
Kalyani Patrikar and Anirban Mondal
Phys. Rev. Materials 8, 054606 (2024) - Published 21 May, 2024
Simone M. Kevy, Laura Wollesen, Kirstine J. Dalgaard, Yu-Te Hsu, Steffen Wiedmann, and Martin Bremholm
Phys. Rev. Materials 8, 054801 (2024) - Published 2 May, 2024
Martando Rath, Yu Chen, Guillaume Krieger, Hoshang Sahib, Daniele Preziosi, and Marco Salluzzo
Phys. Rev. Materials 8, 054802 (2024) - Published 21 May, 2024
Yuki Nakayama, Daigorou Hirai, Hajime Sagayama, Keita Kojima, Naoyuki Katayama, Jannis Lehmann, Ziqian Wang, Naoki Ogawa, and Koshi Takenaka
Phys. Rev. Materials 8, 055001 (2024) - Published 2 May, 2024
Tuğbey Kocabaş, Bipasa Samanta, Elisangela da Silva Barboza, Cem Sevik, Milorad V. Milošević, and Deniz Çakır
Phys. Rev. Materials 8, 055002 (2024) - Published 21 May, 2024
Daisuke Takegami, Kosuke Kawai, Miguel Ferreira-Carvalho, Sahana Rößler, Cheng-En Liu, Chang-Yang Kuo, Chun-Fu Chang, Atsusa Minamida, Tatsuya Miyazaki, Masashi Okubo, Liu Hao Tjeng, and Takashi Mizokawa
Phys. Rev. Materials 8, 055401 (2024) - Published 7 May, 2024
Kyohei Eguchi, Takeru Ito, Yoshiki J. Sato, Ryuji Okazaki, and Hiromi Taniguchi
Phys. Rev. Materials 8, 055402 (2024) - Published 10 May, 2024
A. O. Boev, M. Yu. Arsentev, S. S. Fedotov, A. M. Abakumov, and D. A. Aksyonov
Phys. Rev. Materials 8, 055403 (2024) - Published 13 May, 2024
C. Nowak, C. D. Spataru, K. Chu, X. W. Zhou, and R. B. Sills
Phys. Rev. Materials 8, 055404 (2024) - Published 16 May, 2024
Jagjit Kaur and Sudip Chakraborty
Phys. Rev. Materials 8, 055405 (2024) - Published 17 May, 2024
Drew Behrendt, Sayan Banerjee, Jiahao Zhang, and Andrew M. Rappe
Phys. Rev. Materials 8, 055406 (2024) - Published 20 May, 2024
Bianca Baldassarri, Jiangang He, and Christopher Wolverton
Phys. Rev. Materials 8, 055407 (2024) - Published 30 May, 2024
Andrei Zakharov and Daniel A. Beller
Phys. Rev. Materials 8, 055601 (2024) - Published 7 May, 2024
Xuhe Gong, Jiazi Bi, Xiaobin Liu, Ran Li, Ruijuan Xiao, Tao Zhang, and Hong Li
Phys. Rev. Materials 8, 055602 (2024) - Published 10 May, 2024
Matthew E. Sweers, Qing Ma, Claire M. Donahue, Dennis Nordlund, Sossina M. Haile, and Linsey C. Seitz
Phys. Rev. Materials 8, 055801 (2024) - Published 8 May, 2024
Alessio Zaccone
Phys. Rev. Materials 8, 056001 (2024) - Published 20 May, 2024
M. Mohseni, I. Abdolhosseini Sarsari, S. Karbasizadeh, Péter Udvarhelyi, Q. Hassanzada, T. Ala-Nissila, and A. Gali
Phys. Rev. Materials 8, 056201 (2024) - Published 3 May, 2024
Cyrille Armel Sayou Ngomsi, Tamanna Joshi, and Pratibha Dev
Phys. Rev. Materials 8, 056202 (2024) - Published 20 May, 2024