Angular dependence of the interlayer coupling at the interface between two-dimensional materials and graphene
P. Mallet, F. Ibrahim, K. Abdukayumov, A. Marty, C. Vergnaud, F. Bonell, M. Chshiev, M. Jamet, and J-Y. Veuillen
Phys. Rev. Materials 7, L121001 (2023) - Published 20 December, 2023
Electron and hole doping of monolayer induced by twisted ferroelectric hexagonal boron nitride
J. Fraunié, R. Jamil, R. Kantelberg, S. Roux, L. Petit, E. Lepleux, L. Pacheco, K. Watanabe, T. Taniguchi, V. Jacques, L. Lombez, M. M. Glazov, B. Lassagne, X. Marie, and C. Robert
Phys. Rev. Materials 7, L121002 (2023) - Published 27 December, 2023
2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronic devices. The recent discovery of 2D ferroelectricity in twisted layers of hexagonal boron nitride has opened the route to its integration into complex hybrid van der Waals heterostructures. Here the authors show that opposite polarizations in ferroelectric domains of a folded hBN layer imprint local and doping in a semiconducting WSe monolayer. They demonstrate that WSe can be used as an optical probe of ferroelectricity in hBN and show that doping can be controlled with the position of the semiconductor with respect to the ferroelectric interface.




