Determining ground states of alloys by a symmetry-based classification
Yu-Jie Cen, Chang-Chun He, Shao-Bin Qiu, Yu-Jun Zhao, and Xiao-Bao Yang
Phys. Rev. Materials 6, L050801 (2022) - Published 17 May, 2022
Hidefumi Takahashi, Tomoki Akiba, Alex Hiro Mayo, Kazuto Akiba, Atsushi Miyake, Masashi Tokunaga, Hitoshi Mori, Ryotaro Arita, and Shintaro Ishiwata
Phys. Rev. Materials 6, 054602 (2022) - Published 27 May, 2022
Spin-orbit coupling, which enriches the spin-charge entanglement, can be a key factor for novel spintronic functions. Here, the authors discovered a giant magnetoresistance in two-dimensional magnetic semiconductor AgCrSe, which is a manifestation of the unique band-edge modulation owing to the spin-orbit coupling combined with the p-d exchange interaction. By contrast to common magnetic semiconductors, the present system exhibits a positive magnetoresistance as large as 400 %, when the carrier concentration is tuned to the critical value. This study demonstrates a great potential of the spin-orbit coupling for the exploration of novel transport phenomena in magnetic semiconductors, paving a way to develop novel spintronic devices.
Yehui Zhang, Laurent Bellaiche, and Bin Xu
Phys. Rev. Materials 6, L051401 (2022) - Published 20 May, 2022
Rare-earth (Re) substitution in BiFeO can result in a tuning of the crystal structure from ferroelectric R3c to antiferroelectric Pnma, making (Bi,Re)FeO among the best dielectric materials for energy storage. Using a first-principle-based atomistic approach, the authors predict that playing with the Re elements and varying the composition can systematically alter the polarization-versus-electric field (P-E) hysteresis loop of (Bi,Re)FeO, leading to promising storage performance. For instance, energy density as high as 239 J/cm in (Bi,Tm)FeO solid solutions and efficiencies being generally beyond 80% are predicted. The influential factors on these energy-storage properties, including transition fields, polarization of the ferroelectric state and dielectric constant, are further discussed based on a simple model.
Yu-Jie Cen, Chang-Chun He, Shao-Bin Qiu, Yu-Jun Zhao, and Xiao-Bao Yang
Phys. Rev. Materials 6, L050801 (2022) - Published 17 May, 2022
Yehui Zhang, Laurent Bellaiche, and Bin Xu
Phys. Rev. Materials 6, L051401 (2022) - Published 20 May, 2022
Rare-earth (Re) substitution in BiFeO can result in a tuning of the crystal structure from ferroelectric R3c to antiferroelectric Pnma, making (Bi,Re)FeO among the best dielectric materials for energy storage. Using a first-principle-based atomistic approach, the authors predict that playing with the Re elements and varying the composition can systematically alter the polarization-versus-electric field (P-E) hysteresis loop of (Bi,Re)FeO, leading to promising storage performance. For instance, energy density as high as 239 J/cm in (Bi,Tm)FeO solid solutions and efficiencies being generally beyond 80% are predicted. The influential factors on these energy-storage properties, including transition fields, polarization of the ferroelectric state and dielectric constant, are further discussed based on a simple model.
Jing Guo, Cheng Huang, Huixia Luo, Huaixin Yang, Linlin Wei, Shu Cai, Yazhou Zhou, Hengcan Zhao, Xiaodong Li, Yanchun Li, Ke Yang, Aiguo Li, Peijie Sun, Jianqi Li, Qi Wu, Robert J. Cava, and Liling Sun
Phys. Rev. Materials 6, L051801 (2022) - Published 9 May, 2022
Diana Dhaliah, Yihuang Xiong, Alp Sipahigil, Sinéad M. Griffin, and Geoffroy Hautier
Phys. Rev. Materials 6, L053201 (2022) - Published 31 May, 2022
Subhadip Ghosh, Dipak Patra, and Arun Roy
Phys. Rev. Materials 6, 053401 (2022) - Published 3 May, 2022
G. Awana, R. Fujita, A. Frisk, P. Chen, Q. Yao, A. J. Caruana, C. J. Kinane, N.-J. Steinke, S. Langridge, P. Olalde-Velasco, S. S. Dhesi, G. van der Laan, X. F. Kou, S. L. Zhang, T. Hesjedal, and D. Backes
Phys. Rev. Materials 6, 053402 (2022) - Published 11 May, 2022
Changle Li, Song Lu, Wei Li, Qing Chen, and Levente Vitos
Phys. Rev. Materials 6, 053403 (2022) - Published 24 May, 2022
Paul Jreidini and Nikolas Provatas
Phys. Rev. Materials 6, 053404 (2022) - Published 31 May, 2022
Vishnu Raghuraman, Michael Widom, and Michael C. Gao
Phys. Rev. Materials 6, 053601 (2022) - Published 2 May, 2022
Matteo Busi, Efthymios Polatidis, Florencia Malamud, Winfried Kockelmann, Manuel Morgano, Anders Kaestner, Anton Tremsin, Nikola Kalentics, Roland Logé, Christian Leinenbach, Takenao Shinohara, and Markus Strobl
Phys. Rev. Materials 6, 053602 (2022) - Published 2 May, 2022
Binbin Yue, Matthias Krug, Carmen Sanchez-Valle, Sébastien Merkel, and Fang Hong
Phys. Rev. Materials 6, 053603 (2022) - Published 3 May, 2022
Kazuma Ito, Yuta Tanaka, Takuya Mitsunobu, Takahiko Kohtake, Kazumasa Tsutsui, and Hideaki Sawada
Phys. Rev. Materials 6, 053604 (2022) - Published 9 May, 2022
B. Zhang, C. Wheatley, P. Chen, X. Qian, and M. J. Demkowicz
Phys. Rev. Materials 6, 053605 (2022) - Published 17 May, 2022
C. Dai, P. Saidi, B. Langelier, Q. Wang, C. D. Judge, M. R. Daymond, and M. Mattucci
Phys. Rev. Materials 6, 053606 (2022) - Published 20 May, 2022
N. Kvashin, N. Anento, and A. Serra
Phys. Rev. Materials 6, 053607 (2022) - Published 31 May, 2022
E. Antillon, N. Bernstein, and M. D. Johannes
Phys. Rev. Materials 6, 053801 (2022) - Published 16 May, 2022
Stephen E. Gant, Jonah B. Haber, Marina R. Filip, Francisca Sagredo, Dahvyd Wing, Guy Ohad, Leeor Kronik, and Jeffrey B. Neaton
Phys. Rev. Materials 6, 053802 (2022) - Published 16 May, 2022
Daniel Marchand and W. A. Curtin
Phys. Rev. Materials 6, 053803 (2022) - Published 31 May, 2022
A. C. Dias, Helena Bragança, Matheus P. Lima, and Juarez L. F. Da Silva
Phys. Rev. Materials 6, 054001 (2022) - Published 12 May, 2022
Nourdine Zibouche, Surani M. Gunasekera, Daniel Wolverson, and Marcin Mucha-Kruczynski
Phys. Rev. Materials 6, 054002 (2022) - Published 17 May, 2022
Takat B. Rawal, Ling-Hua Chang, Hao-Dong Liu, Hong-Yan Lu, and C. S. Ting
Phys. Rev. Materials 6, 054003 (2022) - Published 19 May, 2022
Ignacio Gonzalez Oliva, Fabio Caruso, Pasquale Pavone, and Claudia Draxl
Phys. Rev. Materials 6, 054004 (2022) - Published 23 May, 2022
H. Batiz, Ji Guo, Geun Ho Ahn, Hyungjin Kim, Ali Javey, J. W. Ager, III, and D. C. Chrzan
Phys. Rev. Materials 6, 054005 (2022) - Published 23 May, 2022
Ping Li, Chengyang Xu, and Weidong Luo
Phys. Rev. Materials 6, 054006 (2022) - Published 26 May, 2022
H. J. Zheng, W. J. Shi, C. W. Wang, Y. Y. Lv, W. Xia, B. H. Li, F. Wu, S. M. He, K. Huang, S. T. Cui, C. Chen, H. F. Yang, A. J. Liang, M. X. Wang, Z. Sun, S. H. Yao, Y. B. Chen, Y. F. Guo, Q. X. Mi, L. X. Yang, M. S. Bahramy, Z. K. Liu, and Y. L. Chen
Phys. Rev. Materials 6, 054201 (2022) - Published 5 May, 2022
Lei Chen, Shuang-Shuang Li, Weiyao Zhao, Abdulhakim Bake, David Cortie, Xiaolin Wang, Julie Karel, Han Li, and Ren-Kui Zheng
Phys. Rev. Materials 6, 054202 (2022) - Published 11 May, 2022
Y. D. Guan, C. H. Yan, S. H. Lee, X. Gui, W. Ning, J. L. Ning, Y. L. Zhu, M. Kothakonda, C. Q. Xu, X. L. Ke, J. W. Sun, W. W. Xie, S. L. Yang, and Z. Q. Mao
Phys. Rev. Materials 6, 054203 (2022) - Published 31 May, 2022
Minhao Zhao, Zhongbo Yan, Xiaoyi Xie, Yunkun Yang, Pengliang Leng, Mykhaylo Ozerov, Dayu Yan, Youguo Shi, Jinshan Yang, Faxian Xiu, and Shaoming Dong
Phys. Rev. Materials 6, 054204 (2022) - Published 31 May, 2022
Hanyang Qian, Jianping Guo, Zhiyang Wei, and Jian Liu
Phys. Rev. Materials 6, 054401 (2022) - Published 2 May, 2022
Thorbjørn Skovhus, Thomas Olsen, and Henrik M. Rønnow
Phys. Rev. Materials 6, 054402 (2022) - Published 4 May, 2022
Sesha Sai Behara and Anton Van der Ven
Phys. Rev. Materials 6, 054403 (2022) - Published 5 May, 2022
Taro Fukazawa, Yosuke Harashima, and Takashi Miyake
Phys. Rev. Materials 6, 054404 (2022) - Published 9 May, 2022
Yisehak Gebredingle, Minwoong Joe, and Changgu Lee
Phys. Rev. Materials 6, 054405 (2022) - Published 10 May, 2022
Justin A. Mayer and Ram Seshadri
Phys. Rev. Materials 6, 054406 (2022) - Published 12 May, 2022
S. Mukherjee, G. Manna, P. Saha, S. Majumdar, and S. Giri
Phys. Rev. Materials 6, 054407 (2022) - Published 17 May, 2022
Lucas A. B. Marçal, Dmitry Dzhigaev, Zhaojun Zhang, Ella Sanders, Amnon Rothman, Edoardo Zatterin, Ewen Bellec, Tobias U. Schülli, Anders Mikkelsen, Ernesto Joselevich, and Jesper Wallentin
Phys. Rev. Materials 6, 054408 (2022) - Published 18 May, 2022
Chhatra R. Joshi, Mahendra Acharya, Gary J. Mankey, and Arunava Gupta
Phys. Rev. Materials 6, 054409 (2022) - Published 19 May, 2022
Z. Y. Zhao, S. Calder, M. H. Upton, H. D. Zhou, Z. Z. He, M. A. McGuire, and J.-Q. Yan
Phys. Rev. Materials 6, 054410 (2022) - Published 19 May, 2022
German D. Samolyuk and David S. Parker
Phys. Rev. Materials 6, 054411 (2022) - Published 31 May, 2022
M. X. Guo, C. K. Cheng, Y. C. Liu, C. N. Wu, W. N. Chen, T. Y Chen, C. T. Wu, C. H. Hsu, S. Q. Zhou, C. F. Chang, L. H. Tjeng, S. F. Lee, C. F. Pai, M. Hong, and J. Kwo
Phys. Rev. Materials 6, 054412 (2022) - Published 31 May, 2022
Martin Lonsky, Myoung-Woo Yoo, Yi-Siou Huang, Jiangchao Qian, Jian-Min Zuo, and Axel Hoffmann
Phys. Rev. Materials 6, 054413 (2022) - Published 31 May, 2022
Benjamin M. Janzen, Roland Gillen, Zbigniew Galazka, Janina Maultzsch, and Markus R. Wagner
Phys. Rev. Materials 6, 054601 (2022) - Published 24 May, 2022
Hidefumi Takahashi, Tomoki Akiba, Alex Hiro Mayo, Kazuto Akiba, Atsushi Miyake, Masashi Tokunaga, Hitoshi Mori, Ryotaro Arita, and Shintaro Ishiwata
Phys. Rev. Materials 6, 054602 (2022) - Published 27 May, 2022
Spin-orbit coupling, which enriches the spin-charge entanglement, can be a key factor for novel spintronic functions. Here, the authors discovered a giant magnetoresistance in two-dimensional magnetic semiconductor AgCrSe, which is a manifestation of the unique band-edge modulation owing to the spin-orbit coupling combined with the p-d exchange interaction. By contrast to common magnetic semiconductors, the present system exhibits a positive magnetoresistance as large as 400 %, when the carrier concentration is tuned to the critical value. This study demonstrates a great potential of the spin-orbit coupling for the exploration of novel transport phenomena in magnetic semiconductors, paving a way to develop novel spintronic devices.
Timothy Liao, Kai-Hsin Liou, and James R. Chelikowsky
Phys. Rev. Materials 6, 054603 (2022) - Published 31 May, 2022
H. Murakawa, Y. Nakaoka, T. Kida, M. Hagiwara, H. Sakai, and N. Hanasaki
Phys. Rev. Materials 6, 054604 (2022) - Published 31 May, 2022
Zhilong Yang and Haijun Zhang
Phys. Rev. Materials 6, 054801 (2022) - Published 2 May, 2022
M. Y. Chen, K. Iida, K. Kondo, J. Hänisch, T. Hatano, and H. Ikuta
Phys. Rev. Materials 6, 054802 (2022) - Published 2 May, 2022
T. Thuy Hoang, S. H. Rhim, and S. C. Hong
Phys. Rev. Materials 6, 055001 (2022) - Published 6 May, 2022
Shi-Jie Song, Yi-Qiang Lin, Bai-Zhuo Li, Si-Qi Wu, Qin-Qing Zhu, Zhi Ren, and Guang-Han Cao
Phys. Rev. Materials 6, 055002 (2022) - Published 13 May, 2022
Grace A. Pan, Qi Song, Dan Ferenc Segedin, Myung-Chul Jung, Hesham El-Sherif, Erin E. Fleck, Berit H. Goodge, Spencer Doyle, Denisse Córdova Carrizales, Alpha T. N'Diaye, Padraic Shafer, Hanjong Paik, Lena F. Kourkoutis, Ismail El Baggari, Antia S. Botana, Charles M. Brooks, and Julia A. Mundy
Phys. Rev. Materials 6, 055003 (2022) - Published 16 May, 2022
A. S. Belozerov, A. A. Katanin, and V. I. Anisimov
Phys. Rev. Materials 6, 055004 (2022) - Published 18 May, 2022
Christopher A. Mizzi, Binghao Guo, and Laurence D. Marks
Phys. Rev. Materials 6, 055005 (2022) - Published 23 May, 2022
Takashi Koida and Junichi Nomoto
Phys. Rev. Materials 6, 055401 (2022) - Published 11 May, 2022
Haibo Xue, Geert Brocks, and Shuxia Tao
Phys. Rev. Materials 6, 055402 (2022) - Published 12 May, 2022
Sajan Kumar, M. K. Gupta, Prabhatasree Goel, R. Mittal, Olivier Delaire, A. Thamizhavel, S. Rols, and S. L. Chaplot
Phys. Rev. Materials 6, 055403 (2022) - Published 26 May, 2022
Shiwei Zhang, Jianchuan Wang, Lixian Sun, Feng Dang, Yong Du, Hans J. Seifert, and Ting Lei
Phys. Rev. Materials 6, 055404 (2022) - Published 31 May, 2022
Guanying Wei, Junzhi Cui, Wei Wang, Xiaoxiang Guo, Jingli Ren, and Weihua Wang
Phys. Rev. Materials 6, 055601 (2022) - Published 31 May, 2022
John D. Treado, Dong Wang, Arman Boromand, Michael P. Murrell, Mark D. Shattuck, and Corey S. O'Hern
Phys. Rev. Materials 6, 059901 (2022) - Published 18 May, 2022