Boris Croes, Fabien Cheynis, Yide Zhang, Cédric Voulot, Kokou Dodzi Dorkenoo, Salia Cherifi-Hertel, Cristian Mocuta, Michaël Texier, Thomas Cornelius, Olivier Thomas, Marie-Ingrid Richard, Pierre Müller, Stefano Curiotto, and Frédéric Leroy
Phys. Rev. Materials 5, 124415 (2021) - Published 23 December, 2021
In this paper the authors have grown germanium telluride thin films by molecular beam epitaxy on silicon as a proposed system for ferroelectric-based spintronics with high spin-orbit coupling. The structure of ferroelectric domains is explored in a wide range of film thickness. After elucidating the domain wall type and domain volume fraction, the stability of ferroelectric domains with respect to thermomechanical stress is discussed.