Universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials 2, 060401(R) (2018) - Published 12 June, 2018
In the context of advanced photonics or photovoltaics, the monolithic integration of high-quality III-V materials as near as possible to the Si substrate is of great interest. Here, the authors experimentally and theoretically clarify the III-V/Si crystal growth processes. Monodomain 3D islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of the misfit. It is shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. They also propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
Surface-dependent formation of Zn clusters in ZnO single crystals by electron irradiation
Shuangfeng Jia, Lei Li, Lulu Zhao, He Zheng, Peili Zhao, Xiaoxi Guan, Guoxujia Chen, Jiangbing Wu, Siyuan Zhou, and Jianbo Wang
Phys. Rev. Materials 2, 060402(R) (2018) - Published 19 June, 2018
Identification of a functional point defect in
Daesu Lee, Hongwei Wang, Brenton A. Noesges, Thaddeus J. Asel, Jinbo Pan, Jung-Woo Lee, Qimin Yan, Leonard J. Brillson, Xifan Wu, and Chang-Beom Eom
Phys. Rev. Materials 2, 060403(R) (2018) - Published 21 June, 2018
Single-crystal high entropy perovskite oxide epitaxial films
Yogesh Sharma, Brianna L. Musico, Xiang Gao, Chengyun Hua, Andrew F. May, Andreas Herklotz, Ankur Rastogi, David Mandrus, Jiaqiang Yan, Ho Nyung Lee, Matthew F. Chisholm, Veerle Keppens, and T. Zac Ward
Phys. Rev. Materials 2, 060404(R) (2018) - Published 27 June, 2018


