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Interfacial coupling in CsSnCl3−MoS2 composite for enhanced aqueous pseudocapacitive performance

Tasnim Jahan and M. A. Basith*

  • *Contact author: mabasith@phy.buet.ac.bd
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Phys. Rev. Materials 10, 045403 – Published 20 April, 2026

DOI: https://doi.org/10.1103/w6hz-58tr

Abstract

The electrochemical instability of Sn-based halide perovskites in aqueous media is commonly linked to surface electron accumulation and defect-assisted oxidation of Sn2+ to Sn4+. Here, we examine how interfacial coupling in a cesium tin chloride (CsSnCl3)-molybdenum disulfide (MoS2) (CSC–MS, 10%) composite electrode influences charge distribution and electrochemical behavior. Electrochemical and spectroscopic measurements indicate trends consistent with effective electronic redistribution at the interface between n-type CsSnCl3 and p-type 2H-MoS2, suggestive of a type-II–like alignment. Mott-Schottky analysis yields an apparent flat-band offset on the order of several hundred millivolts, which reflects an effective interfacial capacitance response rather than a uniquely defined junction potential in the heterogeneous composite electrode. Correlated trends in x-ray photoelectron spectroscopy, impedance spectroscopy, and kinetic analyses support reduced near-surface electron density in CsSnCl3 and an enhanced pseudocapacitive response. In addition, MoS2 contributes hydrophobic basal planes and electronically active edge states that cooperatively improve interfacial stability, electronic percolation, and charge transport. As a result, the composite exhibits a kinetically extended aqueous operating window approaching 2.3 V under scan conditions and mixed charge-storage behavior in which reversible Sn2+/Sn4+ redox processes are contributory but not exclusive. These results provide a physically consistent, though not uniquely resolved, picture of how interfacial coupling and composite engineering can enhance the aqueous pseudocapacitive performance of lead-free halide perovskite electrodes.

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Phys. Rev. Materials 10, 045403– Published 20 April, 2026
  • Received 30 November 2025
  • Revised 4 February 2026
  • Accepted 17 March 2026
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