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CoRuTiGe: A possible spin gapless semiconductor

Ravinder Kumar1, Tufan Roy2,3, Baisali Ghadai4, Rakesh Kumar4, Sucheta Mondal4, Anil Kumar5, Archana Lakhani6, Devendra Kumar6, Masafumi Shirai2,3 et al.

Sachin Gupta1,*

  • *Contact author: sachin.gupta@bennett.edu.in
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Phys. Rev. Materials 10, 034413 – Published 26 March, 2026

DOI: https://doi.org/10.1103/l85m-lqqq

Abstract

We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate a ferromagnetic nature with a saturation magnetization of ∼0.681µB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor (SGS) like behavior of the material. This SGS nature is further supported by the weak temperature-dependent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These results offer insights that could aid in designing new spin gapless semiconductors with enhanced Curie temperatures for spintronic applications.

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Phys. Rev. Materials 10, 034413– Published 26 March, 2026
  • Received 12 August 2025
  • Accepted 11 March 2026
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