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Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene-MoS2 van der Waals heterostructure

Anamul Md. Hoque1, Vasudev Ramachandra1, Antony George2, Emad Najafidehaghani2, Ziyang Gan2, Richa Mitra1, Bing Zhao1, Dmitrii Khokhriakov1, Andrey Turchanin2 et al.

Samuel Lara-Avila1, Sergey Kubatkin1, and Saroj P. Dash1,*

  • 1Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
  • 2Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena, Germany

  • *saroj.dash@chalmers.se
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Phys. Rev. Materials 7, 044005 – Published 24 April, 2023

DOI: https://doi.org/10.1103/PhysRevMaterials.7.044005

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical applications. Recently, proximity-induced quantum and spintronic effects have been realized in heterostructures of graphene (Gr) with 2D semiconductors and their twisted systems. However, these studies are so far limited to exfoliated flake-based devices, limiting their potential for scalable practical applications. Here, we report spin-valley coupling and spin-relaxation anisotropy in Gr-MoS2 heterostructure devices prepared from scalable chemical vapor-deposited (CVD) 2D materials. Spin precession and dynamics measurements reveal an enhanced spin-orbit coupling strength in the Gr-MoS2 heterostructure in comparison with pristine Gr at room temperature. Consequently, large spin-relaxation anisotropy is observed in the heterostructure, providing a method for spin filtering due to spin-valley coupling. These findings open a scalable platform for all-CVD 2D vdW heterostructures design and their device applications.

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Phys. Rev. Materials 7, 044005– Published 24 April, 2023
  • Received 3 September 2022
  • Accepted 22 March 2023
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