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High temperature photoconductivity of 2D layers of MoS2

Dushmantha Gusthigngnhadurage, Robinson Karunanithy, Praveena Satkunam, Poopalasingam Sivakumar, and Saikat Talapatra

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Phys. Rev. Materials 10, 074002 – Published 6 July, 2026

DOI: https://doi.org/10.1103/9f8x-n3ds

Abstract

We report on the photoconductive properties of thin layers of MoS2 flakes (with layer thicknesses ranging between 25–50 nm) beyond room temperatures. Photoconductivity measurements at multiple temperatures, between 290 and 425 K were performed using a laser source of λ = 640 nm. The variation of photocurrent with temperature at effective laser intensities, Peff (0.1 µW<Peff< 0.8 µW) as well as the variation of fall times of the devices as a function of increasing laser intensities was thoroughly examined and analyzed with a well established theoretical model [A. Rose, Phys. Rev. 97, 322 (1955)]. Our results indicate the possibility of achieving stable MoS2 based detectors with high photoresponsivities (R) ∼102A/W and shot noise limited detectivities (D) ∼1011 Jones, under ambient conditions and beyond room temperatures.

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Phys. Rev. Materials 10, 074002– Published 6 July, 2026
  • Received 16 October 2025
  • Accepted 16 June 2026
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