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Map of the electrostatic potential caused by boron and phosphorous doping in a 0.35-micron silicon transistor, as determined by electron holography. The spatial resolution is 6 nanometers and the field of view is about 700 nanometers.

From the article:

Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
M. A. Gribelyuk, M. R. McCartney, Jing Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and David J. Smith
Phys. Rev. Lett. 89, 025502 (2002)

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Atomic, Molecular, and Optical Physics

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Topological Shocks in Burgers Turbulence

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Plasma and Beam Physics

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Coupled Atomistic and Discrete Dislocation Plasticity

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Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

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Anisotropic Local Stress and Particle Hopping in a Deeply Supercooled Liquid

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Modulation of the Nucleation Rate Preexponential in a Low-Temperature Ising System

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Pattern Formation in Phase-Separating Gels with Spontaneous Shear

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Boundary between Long-Range and Short-Range Critical Behavior in Systems with Algebraic Interactions

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Origin of the High-Frequency Contributions to the Dielectric Loss in Supercooled Liquids

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Three-Dimensional Single Molecule Rotational Diffusion in Glassy State Polymer Films

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Anomalous Roughening of Hele-Shaw Flows with Quenched Disorder

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Condensed Matter: Electronic Properties, etc.

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Phase Glass is a Bose Metal: A New Conducting State in Two Dimensions

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Spin-Wave Quantization in Ferromagnetic Nickel Nanowires

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Reentrant Spin Glass Behavior in Cr-Doped Perovskite Manganite

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Excitation of a Breather Mode of Bound Soliton Pairs in Trans-Polyacetylene by Sub-Five-Femtosecond Optical Pulses

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Giant Infrared Intensity of the Peierls Mode at the Neutral-Ionic Phase Transition

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Optimal Combinations of Imperfect Objects

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COMMENTS

Comment on “Correlation Induced Paramagnetic Ground State in FeAl”

D. A. Papaconstantopoulos and C. Stephen Hellberg

Phys. Rev. Lett. 89, 029701 (2002) - Published 19 June, 2002

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